公开(公告)号：US12087560B2

公开(公告)日：2024-09-10

申请号：US17216972

申请日：2021-03-30

Applicant: SEMES CO., LTD.

Inventor： Dukhyun Son ,  Byung Kyu Kim

IPC: H01J37/32 ,  B25J11/00 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01J37/32743 ,  B25J11/005 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/67778 ,  H01L21/68707

Abstract: The substrate treating apparatus includes a processing module and an index module on which a cassette having the substrate received therein is placed and that includes an index robot that transfers the substrate between the cassette and the processing module. The processing module includes a process chamber and a transfer chamber. The process chamber includes a support unit. The support unit includes a support on which the substrate is placed and a ring member that surrounds the substrate placed on the support and that is provided so as to be detachable from the support. The apparatus further includes a carrier storage unit that stores a carrier that is mounted on a hand of the main transfer robot or the index robot and on which the ring member is placed when the ring member is transferred by the main transfer robot or the index robot.

公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

公开(公告)号：US20240290584A1

公开(公告)日：2024-08-29

申请号：US18656590

申请日：2024-05-06

Applicant: MEYER BURGER (GERMANY) GMBH

Inventor： Hermann SCHLEMM ,  Mirko KEHR ,  Erik ANSORGE ,  Sebastian RASCHKE

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509

CPC classification number: H01J37/32743 ,  C23C16/4586 ,  C23C16/509

Abstract: The invention relates to an apparatus for transporting a substrate into or out of a treatment apparatus, to a treatment apparatus, to a method of processing a substrate and to a treatment system having a movement arrangement for moving such an apparatus for transporting a substrate. In this case, the apparatus for transporting a substrate has a substrate carrier that includes a horizontally extending holding area and one or a plurality of gripping arms. The holding area is even and uniform on a first surface facing the substrate, the shape of said holding area substantially corresponding to the shape of the substrate and the area size of said holding area being substantially the same as the area size of the substrate, the substrate being held with its rear side on the holding area merely by its weight. The treatment apparatus has a receiving plate on which the substrate is held during the treatment, the receiving plate having a recess that is suitable for receiving such a substrate carrier during the treatment of the substrate in a first surface.

公开(公告)号：US20240266220A1

公开(公告)日：2024-08-08

申请号：US18105390

申请日：2023-02-03

Applicant: Applied Materials, Inc.

Inventor： Jonathan Bryant MELLEN ,  Clinton GOH ,  Cheng SUN

IPC: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC classification number: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67207 ,  H01L23/544 ,  H01J2237/022 ,  H01J2237/334 ,  H01L2223/5446

Abstract: A method for dicing a die from a substrate for bonding that leverages laser and multiple etch processes. The method may include performing a laser cutting process to form a cut that removes a first portion of a dicing street in the substrate, performing a first plasma etch process to increase the laser kerf width to a first plasma etch width that is less than a dicing street width and to remove any non-silicon material from a bottom of the cut, and performing a second plasma etch process to increase the first plasma etch width to the dicing street width and to remove any remaining portion of the dicing street to completely separate the die from the substrate.

公开(公告)号：US12020909B2

公开(公告)日：2024-06-25

申请号：US18188095

申请日：2023-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Yeob Lee ,  Sungyeol Kim ,  Jinyeong Yun ,  Minsung Kim ,  HoSun Yoo

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32798

Abstract: A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

公开(公告)号：US12020907B2

公开(公告)日：2024-06-25

申请号：US16844106

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Arun Thottappayil ,  Mayur Govind Kulkarni ,  Junghoon Sun ,  Jun Tae Choi ,  Hang Yu

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32366 ,  H01J37/32513 ,  H01J37/32623 ,  H01J37/32743 ,  H01J37/32834 ,  H01L21/0262 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

公开(公告)号：US12002663B2

公开(公告)日：2024-06-04

申请号：US17377601

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Rung Hsu ,  Li-Te Lin ,  Pinyen Lin

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32743 ,  H01J37/3211 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01J37/32568

Abstract: A processing apparatus is provided. The processing apparatus includes a chamber and a carrier that is positioned in the chamber for holding a substrate. The processing apparatus further includes a gas inlet connected to the chamber. The gas inlet is configured to supply a process gas into the chamber. The processing apparatus also includes a coil module positioned around the chamber and configured to transfer the process gas into plasma. In addition, the processing apparatus includes a filter disposed in the chamber. The coil module is configured to change a position of the plasma between a first position and a second position, the first position is located between the gas inlet and the filter, and the second position is located between the filter and the carrier.

公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

公开(公告)号：US20240096604A1

公开(公告)日：2024-03-21

申请号：US18471002

申请日：2023-09-20

Applicant: Kokusai Electric Corporation

Inventor： Yukinori ABURATANI ,  Kaoru YAMAMOTO

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32743 ,  H01J37/32788

Abstract: There is provided a technique that includes: a process chamber configured to process a plurality of substrates; and a plasma generator configured to generate plasma in the process chamber, the plasma generator including a first electrode part configured to extend from a lower side to an intermediate side of the process chamber, and a second electrode part configured to extend from an upper side to the intermediate side of the process chamber.

公开(公告)号：US20230352279A1

公开(公告)日：2023-11-02

申请号：US18002289

申请日：2021-06-21

Applicant: Lam Research Corporation

Inventor： Nick Ray Linebarger, JR. ,  Fayaz A. Shaikh ,  Arul N. Dhas

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32403 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32899 ,  H01L21/02274 ,  H01J2237/332

Abstract: Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.