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公开(公告)号：US06837572B2
公开(公告)日：2005-01-04
申请号：US10643264
申请日：2003-08-19
申请人： Ravi Ramaswami , Victor Joseph , Colin C. Davis , Ronnie J. Yenchik , Daniel A. Kearl , Martha A. Truninger , Roberto A. Pugliese, Jr. , Ronald L. Enck
发明人： Ravi Ramaswami , Victor Joseph , Colin C. Davis , Ronnie J. Yenchik , Daniel A. Kearl , Martha A. Truninger , Roberto A. Pugliese, Jr. , Ronald L. Enck
IPC分类号： B41J2/16
CPC分类号： B41J2/1628 , B41J2/162 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642 , B41J2/1645 , B41J2/1646 , Y10T29/49401
摘要： A process for fabricating a droplet plate for the printhead of an ink-jet printer, which process provides design flexibility, precise dimension control, as well as material robustness. Also provided is a droplet plate fabricated in accord with the process.
摘要翻译： 一种用于制造用于喷墨打印机的打印头的液滴板的方法，该方法提供设计灵活性，精确的尺寸控制以及材料坚固性。 还提供了根据该方法制造的液滴板。
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公开(公告)号：US06582063B1
公开(公告)日：2003-06-24
申请号：US09814283
申请日：2001-03-21
IPC分类号： B41J205
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
摘要翻译： 在喷墨打印头制造中使用硅晶片衬底。 通过与衬底接触通孔同时形成MOSFET源极/漏极接触通孔来改进制造工艺。 使用具有至少10:1的氧化硅：硅蚀刻速率的干蚀刻。
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公开(公告)号：US06911155B2
公开(公告)日：2005-06-28
申请号：US10061836
申请日：2002-01-31
申请人： Michael D. Miller , Michael Hager , Naoto A. Kawamura , Roberto A. Pugliese, Jr. , Ronald L. Enck , Susanne L. Kumpf , Shen Buswell , Mehrgan Khavari
发明人： Michael D. Miller , Michael Hager , Naoto A. Kawamura , Roberto A. Pugliese, Jr. , Ronald L. Enck , Susanne L. Kumpf , Shen Buswell , Mehrgan Khavari
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1632
摘要： The described embodiments relate to methods and systems for forming slots in a substrate. In one exemplary embodiment, a slot is formed in a substrate that has first and second opposing surfaces. A first trench is dry etched through the first surface of the substrate. A second trench is created through the second surface of the substrate effective to form, in combination with the first trench, a slot. At least a portion of the slot passes entirely through the substrate, and the maximum width of the slot is less than or equal to about 50 of the thickness of the substrate.
摘要翻译： 所描述的实施例涉及在衬底中形成槽的方法和系统。 在一个示例性实施例中，在具有第一和第二相对表面的基板中形成槽。 通过衬底的第一表面干蚀刻第一沟槽。 通过衬底的第二表面产生第二沟槽，其有效地与第一沟槽组合形成槽。 槽的至少一部分完全穿过衬底，并且槽的最大宽度小于或等于衬底厚度的约50％。
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公开(公告)号：US06481831B1
公开(公告)日：2002-11-19
申请号：US09611810
申请日：2000-07-07
IPC分类号： B41J205
CPC分类号： B41J2/1629 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646
摘要： An inkjet printhead and a method of fabricating an inkjet printhead is disclosed. The inkjet printhead includes a conducting material layer deposited on an insulative dielectric. The conducting material layer has a chamber formed between a first and a second section of the conducting material layer. A dielectric material is fabricated on the first and second sections of the conducting material layer and on the insulative dielectric in the chamber. The dielectric material has a planarized top surface. A first via is formed in the dielectric material, thereby exposing a portion of the first section of the conducting material layer. A second via is formed in the dielectric material, thereby exposing a portion of the second section of the conducting material layer. The first and second vias each having sidewalls sloped at an angle in the range of approximately 10-60 degrees. A resistive material layer is formed in the first and second vias and on the planarization dielectric between the first and second vias through a single photoresist mask and a single etch process. A passivation material layer is formed onto the planarization dielectric material and onto the resistive material layer.
摘要翻译： 公开了喷墨打印头和制造喷墨打印头的方法。 喷墨打印头包括沉积在绝缘电介质上的导电材料层。 导电材料层具有形成在导电材料层的第一和第二部分之间的室。 介电材料制造在导电材料层的第一和第二部分以及室中的绝缘电介质上。 电介质材料具有平坦化的顶表面。 在电介质材料中形成第一通孔，从而暴露导电材料层的第一部分的一部分。 在电介质材料中形成第二通道，从而暴露导电材料层的第二部分的一部分。 第一和第二通孔各自具有以大约10-60度的角度倾斜的侧壁。 电阻材料层通过单个光致抗蚀剂掩模和单个蚀刻工艺在第一和第二通孔中以及在第一和第二通孔之间的平坦化电介质上形成。 在平坦化电介质材料上和电阻材料层上形成钝化材料层。
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公开(公告)号：US07037736B2
公开(公告)日：2006-05-02
申请号：US10436921
申请日：2003-05-13
IPC分类号： H01L21/00
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.
摘要翻译： 本发明包括作为一个实施例的用于制造由硅衬底制成的喷墨打印头的一部分的方法，所述方法包括选择性地蚀刻具有与栅极绝缘的导电沟道的场效应晶体管的有源区接触通孔 通过一层氧化物以及使用单个掩模的单独的衬底接触孔，并且在选择性蚀刻期间与有源区接触通孔同时形成衬底接触孔。
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公开(公告)号：US06682874B2
公开(公告)日：2004-01-27
申请号：US10244351
申请日：2002-09-16
申请人： Ravi Ramaswami , Victor Joseph , Colin C. Davis , Ronnie J. Yenchik , Daniel A. Kearl , Martha A. Truninger , Roberto A. Pugliese, Jr. , Ronald L. Enck
发明人： Ravi Ramaswami , Victor Joseph , Colin C. Davis , Ronnie J. Yenchik , Daniel A. Kearl , Martha A. Truninger , Roberto A. Pugliese, Jr. , Ronald L. Enck
IPC分类号： G03C500
CPC分类号： B41J2/1628 , B41J2/162 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642 , B41J2/1645 , B41J2/1646 , Y10T29/49401
摘要： A process for fabricating a droplet plate for the printhead of an ink-jet printer, which process provides design flexibility, precise dimension control, as well as material robustness. Also provided is a droplet plate fabricated in accord with the process.
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公开(公告)号：US07569404B2
公开(公告)日：2009-08-04
申请号：US11341101
申请日：2006-01-27
IPC分类号： H01L21/00
CPC分类号： B41J2/1603 , B41J2/14072 , B41J2/14129 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2202/13 , H01L21/76816 , H01L21/823425 , H01L21/823437
摘要： A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.
摘要翻译： 在喷墨打印头制造中使用硅晶片衬底。 通过与衬底接触通孔同时形成MOSFET源极/漏极接触通孔来改进制造工艺。 使用具有至少10:1的氧化硅：硅蚀刻速率的干蚀刻。
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公开(公告)号：US06286939B1
公开(公告)日：2001-09-11
申请号：US08938786
申请日：1997-09-26
IPC分类号： B41J205
CPC分类号： B41J2/14129 , B41J2202/03
摘要： A thermal ink jet printhead that includes a thin film substrate including a plurality of thin film layers, a plurality of ink firing heater resistors defined in the plurality of thin film layers, a patterned tantalum layer disposed on said plurality of thin film layers, a barrier adhesion layer disposed on the patterned tantalum layer, an ink barrier layer disposed over the barrier adhesion layer, and respective ink chambers formed in the ink barrier layer over respective thin film resistors, each chamber formed by a chamber opening in barrier layer, the barrier adhesion layer more particularly comprises a tantalum nitride layer or a deposited tantalum, carbon, fluorine, and oxygen containing layer that is formed pursuant to exposure of the patterned tantalum layer to a plasma that includes a fluorinated hydrocarbon such as carbon tetrafluoride (CF4), fluoroform (CHF3), hexafluoroethane (C2F6), difluoromethane (CH2F2), pentafluoroethane (C2HF5), tetraf luoroethane (C2H2F4), or octafluorobutene (C4F8).
摘要翻译： 一种热喷墨打印头，其包括具有多个薄膜层的薄膜基板，多个薄膜层中限定的多个喷墨加热电阻器，设置在所述多个薄膜层上的图案化钽层， 设置在图案化的钽层上的粘合层，设置在阻挡粘附层上的油墨阻挡层和在各个薄膜电阻器上形成在油墨阻挡层中的各个油墨室，每个室由阻挡层中的开口形成， 层更具体地包括氮化钽层或沉积的钽，碳，氟和含氧层，其是通过将图案化的钽层暴露于等离子体而形成的，所述等离子体包括氟化烃如四氟化碳（CF 4），氟代（ CHF3），六氟乙烷（C2F6），二氟甲烷（CH2F2），五氟乙烷（C2HF5），四氟乙烷（C2H2F4）或八氟 鲁本（C4F8）。
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