Abstract:
Circuit nodes are identified which, in unpowered mode, can be charged with positive or negative charges but cannot be discharged. Then protective elements are added to allow the discharge of these nodes. These elements do not affect the operation of the circuit in powered mode. Discharges of the two polarities are handled, positive and negative. The circuit is thus more resistant to ESD and passes CDM tests.
Abstract:
A persistent volatile memory cell memorizes a binary datum during a retention time independent from a supply voltage of the memory cell. The memory cell comprises a capacitive memory point supplying a persistent voltage and having a determined discharge time, a switch for triggering the discharge of the memory point when an erase signal has an active value, a switch for triggering the charge of the memory point when a write signal has an active value, and a sense-amplifier circuit having an input receiving the persistent voltage, and an output supplying the binary datum. The memory cell can be applied to the management of an inventory flag in a contactless integrated circuit.
Abstract:
The present invention relates to a method for managing the stack of a microprocessor comprising a central processing unit and a memory array, the central processing unit comprising registers containing contextual data and a stack pointer, the stack being a zone of the memory array used for saving contextual data upon a switch from a first to a second program. According to the present invention, the method comprises saving contextual data contained in a variable number of registers that varies according to the value of at least one flag stored in a register to be saved. Advantages: optimization of the filling of the stack and of the number of subprograms that can be interleaved.
Abstract:
An integrated electronic circuit includes superimposed insulating layers and metal elements distributed within said insulating layers. Each insulating layer comprises a first level within which the metal elements lie substantially in the plane of said first level, and a second level traversed by the metal elements in a direction substantially perpendicular to the plane of said second level, so as to come into contact with at least one metal element of the first level. The levels also comprise insulation zones for insulating the metal elements from each other. For at least one insulating layer, at least one of the levels of said at least one insulating layer comprises at least two insulation zones respectively realized of a first material and a second material which are different from each other.
Abstract:
A pixel is formed in a semiconductor substrate of a first doping type, a first layer of the second doping type covering the substrate, a second layer of the first doping type covering the first layer. A MOS-type transistor is formed in the second layer and has a drain area and a source area of the second doping type. The pixel includes a first area of the second doping type, more heavily doped than the first layer, crossing the second layer and extending into the first layer and connected to the drain area. The pixel further includes a second area of the first doping type, more heavily doped than the second layer and bordering the source area.
Abstract:
A sense amplifier for reading a memory cell, comprising: a read node linked to the memory cell, an active stage connected to the read node and comprising means for supplying a read current on the read node, and a data output linked to a node of the active stage where an electrical voltage representative of the state of conductivity of the memory cell appears. The sense amplifier comprises means for adjusting a voltage appearing on the read node at a value inferior to a value of threshold voltage linked to the manufacturing technique of the sense amplifier. Application in particular to the reading of non-volatile memories of the type EEPROM, FLASH and PCM.
Abstract:
The invention relates to a method for the filtering and analog/digital conversion of an incoming analog signal including an analog filtering of the incoming analog signal so as to filter the frequency components located outside a desired frequency band, and a conversion of the filtered analog signal to a digital signal. The digital signal is reformatted in a form that is substantially similar, at least in the desired frequency band, to the form of the incoming analog signal. A final digital filtering of the reformatted digital signal is performed so as to filter the frequency components located outside the desired frequency band.
Abstract:
A contactless integrated circuit receiving an RF signal comprises a clock-signal generator to produce a clock signal from a first half wave and a second half wave representing the received RF signal. Also disclosed is a method for the generation of a clock signal in which the first half wave and the second half wave are compared to produce the clock signal. The invention is adapated for use in contactless cards, transponders, and the like.
Abstract:
A secured method of cryptographic computation to generate output data from input data and from a secret key includes a derived key scheduling step to provide a derived key from the secret key according to a known key scheduling operation. The method also includes a masking step, performed before the derived key scheduling step, to mask the secret key so that the derived scheduled key is different at each implementation of the method. The present method and component can be used in transfer type applications, such as bank type applications.
Abstract:
A method and a circuit for detecting a malfunction of at least one first counter controlled by a first signal, in which a second counter, controlled by a second signal identical to the first signal or to its inverse, and counting in the reverse direction with respect to the first counter, is set with a value complementary to a setting value of the first counter; the respective current values of the first and second counters are added up; and the current sum is compared with at least one value representing the greatest one of the setting values or this greatest value plus one.