公开(公告)号：US20180252996A1

公开(公告)日：2018-09-06

申请号：US15756799

申请日：2016-05-11

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jinyin Wan ,  Jinheng Wang ,  Lei Zhang ,  Jie Chen

IPC: G03F1/36 ,  H01L21/027

Abstract: An optical proximity correction method, comprising: dissecting an edge of a design pattern (120/220) to form a segment (Seg1/Seg2); setting target points of the segments (Seg1/Seg2), and if the segments (Seg1/Seg2) translate in a direction vertical to the segments (Seg1/Seg2), controlling tangent points (P1/P2) of the segments (Seg1/Seg2) tangent to a simulated pattern (110/210) to coincide with the target points; computing edge position differences of the target points; and correcting the design pattern (120/220) according to the edge position differences.

公开(公告)号：US20180130877A1

公开(公告)日：2018-05-10

申请号：US15564181

申请日：2016-01-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Feng HUANG ,  Guangtao HAN ,  Guipeng SUN ,  Feng LIN ,  Longjie ZHAO ,  Huatang LIN ,  Bing ZHAO

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76229 ,  H01L29/66681 ,  H01L29/7816

Abstract: Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a wafer on which a first N well (22), a first P well (24) and a channel region shallow trench isolating structure (42) are formed; forming a high-temperature oxidation film on the surface of the wafer by deposition; photoetching and dryly etching the high-temperature oxidation film, and reserving a thin layer as an etching buffer layer; performing wet etching, removing the etching buffer layer in a region which is not covered by a photoresist, and forming a mini oxidation layer (52); performing photoetching and ion injection to form a second N well (32) in the first N well and form a second P well (34) in the first P well; forming a polysilicon gate (62) and a gate oxide layer on the surface of the wafer; and photoetching and injecting N-type ions to form a drain electrode (72) and a source electrode (74).