Fuel cell system using butane
    221.
    发明申请
    Fuel cell system using butane 有权
    燃料电池系统使用丁烷

    公开(公告)号:US20070166579A1

    公开(公告)日:2007-07-19

    申请号:US11651101

    申请日:2007-01-09

    Abstract: A fuel cell system comprises: a fuel container for storing fuel liquefied with pressure; a reformer for generating hydrogen from the fuel through a catalyst reaction based on heat energy; an electric generator for generating electricity by transforming energy of an electrochemical reaction between hydrogen and oxygen into electric energy; a condenser for condensing water produced in the electric generator; and a heat exchanger passing through the condenser for cooling the condenser by latent heat of the fuel. With this configuration, cooling water cooled by latent heat of a fuel container is employed to cool the condenser without using a separate cooler. Furthermore, air is mixed with butane fuel without using a separate power unit, so that it is possible to achieve a more compact and highly efficient fuel cell.

    Abstract translation: 燃料电池系统包括:用于储存压力液化的燃料的燃料容器; 用于通过基于热能的催化剂反应从燃料产生氢的重整器; 通过将氢和氧之间的电化学反应的能量转化为电能来发电的发电机; 用于冷凝在发电机中产生的水的冷凝器; 以及通过冷凝器的热交换器,用于通过燃料的潜热冷却冷凝器。 采用这种结构,采用通过燃料容器的潜热冷却的冷却水来冷却冷凝器而不使用单独的冷却器。 此外,空气与丁烷燃料混合,而不使用单独的动力单元,使得可以实现更紧凑和高效的燃料电池。

    Semiconductor memory device and fabrication method thereof
    223.
    发明授权
    Semiconductor memory device and fabrication method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号:US06885070B2

    公开(公告)日:2005-04-26

    申请号:US10259871

    申请日:2002-09-30

    CPC classification number: H01L27/11526 H01L27/105 H01L27/11539 Y10S257/903

    Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.

    Abstract translation: 在包括存储单元和外围电路单元的半导体存储器件中,存储单元具有形成在半导体衬底上的第一栅极结构; 第一导电类型的第一杂质区域形成在栅极结构的第一侧上的衬底中; 以及形成在所述栅极结构的第二侧上的所述衬底中的第二杂质区域,所述第二杂质区域包括:第一导电类型的第三杂质区域,第三杂质区域和第三杂质区域之间的第一导电类型的第四杂质区域, 栅极结构的第二侧和与第四杂质区相邻形成的第二导电类型的晕圈离子区。

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