Abstract:
A fuel cell system comprises: a fuel container for storing fuel liquefied with pressure; a reformer for generating hydrogen from the fuel through a catalyst reaction based on heat energy; an electric generator for generating electricity by transforming energy of an electrochemical reaction between hydrogen and oxygen into electric energy; a condenser for condensing water produced in the electric generator; and a heat exchanger passing through the condenser for cooling the condenser by latent heat of the fuel. With this configuration, cooling water cooled by latent heat of a fuel container is employed to cool the condenser without using a separate cooler. Furthermore, air is mixed with butane fuel without using a separate power unit, so that it is possible to achieve a more compact and highly efficient fuel cell.
Abstract:
A catalyst for reforming a fuel and a fuel cell system including the same is provided. The catalyst for reforming a fuel includes at least one active metal selected from the group consisting of titanium (Ti), iron (Fe), chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), tungsten (W), molybdenum (Mo), manganese (Mn), tin (Sn), ruthenium (Ru), aluminum (Al), platinum (Pt), silver (Au), palladium (Pd), copper (Cu), rhodium (Rh), zinc (Zn), and mixtures thereof, supported on a metal foam, and a fuel cell system in which butane is used as a fuel, also including the same catalyst composition as a reforming catalyst for use in a reformer.
Abstract:
In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.