公开(公告)号：US20010004051A1

公开(公告)日：2001-06-21

申请号：US09738993

申请日：2000-12-14

Applicant: U.S. PHILIPS CORPORATION

Inventor： Godwin D. Zwanenburg ,  Hai L. Ge ,  Yue Fang

IPC: B01D061/46 ,  B01D035/06 ,  C25B009/10 ,  C25B011/04

CPC classification number: B01D61/46 ,  B01D61/44 ,  C02F1/4604 ,  C02F1/469 ,  C02F2201/46115

Abstract: A water-processing domestic appliance with means (410; 620) for processing water and, upstream of said means, a cathode (35) and an anode (45) for the de-ionization of water in a de-ionization space (50) before said water is processed. A cathode screen (31) screens off a cathode region (30) from the de-ionization space (50), said cathode (35) being situated in the cathode region (30), while at least a portion of the cathode screen (31) is formed by a kation membrane (32). A much reduced maintenance necessity is achieved in that ions can be removed from the water to be processed without necessarily depositing on the cathode, and can be removed from the cathode region together with liquid.

Abstract translation: 一种具有用于处理水的装置（410; 620）并且在所述装置的上游的用于在去离子空间（50）中去除水的阴极（35）和阳极（45）的水处理家用电器， 之前说水被处理。 阴极屏幕（31）从去离子空间（50）屏蔽阴极区域（30），阴极（35）位于阴极区域（30）中，而阴极屏幕（31）的至少一部分 ）由隔膜（32）形成。 实现了可以从待处理的水中去除离子而不必沉积在阴极上，并且可以与液体一起从阴极区域去除离子，从而大大减少了维护的必要性。

公开(公告)号：US20010003374A1

公开(公告)日：2001-06-14

申请号：US09730656

申请日：2000-12-06

Applicant: U.S. PHILIPS CORPORATION

Inventor： Marcel Rene Bohmer ,  Nicolaas Kooyman

IPC: B32B005/00 ,  H01L023/02

CPC classification number: H01L23/573 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/26 ,  H01L2924/00

Abstract: A semiconductor device (20) comprising a substrate (1) is provided with a first semiconductor element (3) on a first side (2), of the substrate and with a security coating (14) comprising a matrix, a first filler and a second filler. The second filler is an absorber of radiation of a wavelength of between 800 and 1400 nm and the refractive index of the first filler differs at least 0.3 from that of the matrix. As a result, the security coating inhibits transmission of radiation with a wavelength of between 400 and 1400 nm to a very large extent. The semiconductor device (20) can be incorporated in a smartcard.

Abstract translation: 一种包括衬底（1）的半导体器件（20）在衬底的第一侧（2）上设置有第一半导体元件（3），并具有包括矩阵，第一填充物和 第二填料。 第二填料是波长在800和1400nm之间的辐射吸收剂，第一填料的折射率与基质的折射率不同，至少为0.3。 结果，安全涂层在很大程度上抑制波长在400和1400nm之间的辐射透射。 半导体器件（20）可以结合在智能卡中。

公开(公告)号：US20010001615A1

公开(公告)日：2001-05-24

申请号：US09757786

申请日：2001-01-10

Applicant: U.S. Philips Corporation

Inventor： Nicolas Bailleul

IPC: H04B014/04

CPC classification number: H04N19/00 ,  H04N19/192 ,  H04N19/40 ,  H04N19/60 ,  H04N19/61 ,  H04N19/70 ,  H04N21/23406 ,  H04N21/2343 ,  H04N21/234354 ,  H04N21/23608 ,  H04N21/2401

Abstract: A data stream (DS) comprises a time multiplex of coded data (D) and control data (C). The data stream (DS) may be, for example, of the MPEG type representing a sequence of pictures. The coded data (D) is transcoded (T) so as to obtain transcoded data (DT) which differs in size from the coded data (D). The control data (C) is adapted for the transcoded data (DT) so as to obtain adapted control data (CA) which does not substantially differ in size from the control data (C). The transcoded data (DT) and the adapted control data (CA) are written into a transcoder output buffer (TOB) and read from the transcoder output buffer (TOB) so as to obtain a transcoded data stream (DST). This allows an efficient use of a transmission channel via which the transcoded data stream (DST) is to be transmitted and, consequently, it allows a satisfactory transcoding quality. A size adjustment of the transcoded data (DT) on the basis of the amount of data contained in the transcoder output buffer (TOB) and control codes (CC) contained in the data stream (DS) further contributes to a satisfactory transcoding quality.