公开(公告)号：US20140209848A1

公开(公告)日：2014-07-31

申请号：US14242706

申请日：2014-04-01

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Agostino Pirovano

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L45/00 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144

Abstract: Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.

Abstract translation: 一些实施例包括在顶部和底部导电材料之间具有多个带的记忆结构。 这些带包括与非硫属化物带交替的硫属化物带。 在一些实施方案中，可以存在至少两个硫族化物带和至少一个非硫族化物带。 在一些实施例中，存储器单元可以在一对电极之间; 其中一个电极被配置为喷枪，倾斜板，容器或梁。 在一些实施例中，存储器单元可以与诸如二极管，场效应晶体管或双极结型晶体管的选择器件电耦合。

公开(公告)号：US20140206171A1

公开(公告)日：2014-07-24

申请号：US14225111

申请日：2014-03-25

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Ugo Russo ,  Agostino Pirovano ,  Simone Lavizzari

IPC: H01L45/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1286 ,  H01L45/141 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1675

Abstract: Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material.

Abstract translation: 一些实施例包括集成设备，诸如存储器单元。 这些装置可以包括硫族化物材料，在硫族化物材料上的导电材料，以及在导电材料和硫族化物材料之间的散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。 一些实施例包括形成存储器单元的方法。 可以在加热器材料上形成硫族化物材料。 可以在硫族化物材料上形成导电材料。 可以在导电材料和硫族化物材料之间形成散热器。 散热器可以是包括与导电材料相同的元件的组合物，并且包括与硫族化物材料相同的元件。