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公开(公告)号：US20240186952A1
公开(公告)日：2024-06-06
申请号：US18081625
申请日：2022-12-14
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Yu-Hsuan Chao
CPC classification number: H03F1/0205 , H03F3/193 , H03F2200/451
Abstract: An amplifying circuit includes a first transistor, a second transistor, and a switching circuit. A control terminal of the first transistor is coupled to an input terminal of the amplifying circuit, and a first terminal of the first transistor is coupled to a first reference end. The input terminal of the amplifying circuit receives a first radio frequency (RF) signal. A first terminal of the second transistor is coupled to a second terminal of the first transistor, and a second terminal of the second transistor is coupled to an output terminal of the amplifying circuit. The output terminal of the amplifying circuit outputs an amplified signal. The first transistor amplifies the first RF signal to generate a second RF signal. The switching circuit performs a switching operation to transmit the second RF signal to one of the first terminal and the control terminal of the second transistor.
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公开(公告)号：US20230361765A1
公开(公告)日：2023-11-09
申请号：US18219068
申请日：2023-07-06
Applicant: RichWave Technology Corp.
Inventor： Hsiang-Jen Jao , Tien-Yun Peng , Chih-Sheng Chen
IPC: H03K17/0412
CPC classification number: H03K17/04123
Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.
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公开(公告)号：US20230344402A1
公开(公告)日：2023-10-26
申请号：US17842801
申请日：2022-06-17
Applicant: RichWave Technology Corp.
Inventor： Shih-Meng Lin , Shih-Che Chen
IPC: H03H9/02
CPC classification number: H03H9/02574 , H03H9/02992
Abstract: An acoustic wave device includes a piezoelectric substrate, a transducer, and a depression. The transducer is disposed on a surface of the piezoelectric substrate, and includes a first bus bar, a first electrode, a second bus bar, and a second electrode. The first bus bar and the second bus bar extend along a second direction. The first electrode has a first end and extends from the first bus bar along a first direction. The first electrode and the second electrode are spaced apart from each other, and a gap is formed between the first end of the first electrode and an edge of the second bus bar. The depression is formed in the piezoelectric substrate and is depressed from the surface of the piezoelectric substrate. The first end of the first electrode is continuously joined to a sidewall of the depression along a depth direction.
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公开(公告)号：US11764736B2
公开(公告)日：2023-09-19
申请号：US17392205
申请日：2021-08-02
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Tien-Yun Peng
CPC classification number: H03F1/30 , H03F1/0261 , H03F3/04 , H03G3/10 , H03G3/30
Abstract: The present invention discloses a bias compensation circuit. The bias compensation circuit includes a detecting circuit, including a diode-connected transistor circuit, with a first end for receiving a first current, and a second end coupled to a first reference voltage end; and a first diode circuit, with a first end for receiving a second current, and a second end coupled to the first reference voltage end; wherein the detecting circuit provides a first voltage level according to the diode-connected transistor circuit, and provides a second voltage level according to the first diode circuit; a voltage-current converting circuit, coupled to the detecting circuit, for generating a first reference current according to the first voltage level and the second voltage level; and a bias circuit, coupled to the voltage-current converting circuit, for receiving the first reference current, to provide a bias voltage level according to the first reference current.
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公开(公告)号：US11742845B2
公开(公告)日：2023-08-29
申请号：US17565475
申请日：2021-12-30
Applicant: RichWave Technology Corp.
Inventor： Hsiang-Jen Jao , Tien-Yun Peng , Chih-Sheng Chen
IPC: H03K17/0412
CPC classification number: H03K17/04123
Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.
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Patent Agency Ranking
公开(公告)号：US20230179194A1
公开(公告)日：2023-06-08
申请号：US17565475
申请日：2021-12-30
Applicant: RichWave Technology Corp.
Inventor： Hsiang-Jen Jao , Tien-Yun Peng , Chih-Sheng Chen
IPC: H03K17/0412
CPC classification number: H03K17/04123
Abstract: A switch device includes a first radio-frequency (RF) terminal, a second RF terminal, a first transistor, a second transistor, and a variable resistance element. The first transistor includes a first terminal coupled to the first RF terminal, a second terminal, and a control terminal coupled to a control signal terminal providing a control signal. The second transistor includes a first terminal coupled to the second terminal of the first transistor, a second terminal coupled to the second RF terminal, and a control terminal. The variable resistance element is coupled between the second terminal of the first transistor and a bias voltage terminal. When the first transistor and the second transistor are in a transient state, the variable resistance element provides a lower resistance. When the first transistor and the second transistor are in an ON state, the variable resistance element provides a higher resistance.
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公开(公告)号：US20230123320A1
公开(公告)日：2023-04-20
申请号：US17542463
申请日：2021-12-05
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Yu-Hsiang Chu
Abstract: A radio frequency switch has an antenna end, a first signal end for transmitting a first radio frequency signal, a second signal end for transmitting a second radio frequency signal, a third signal end for transmitting a third radio frequency signal, a first series path having a first switch, a second series path having a second switch, a third series path having a third switch, a first shunt path coupled between the first signal end and a node, a second shunt path coupled between the second signal end and the node, a common path coupled between the node and a first reference voltage end, and a third shunt path coupled between the third signal end and a second reference voltage end. The first series path and the second series path are connected to a common ground pad via the common path.
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公开(公告)号：US11615997B2
公开(公告)日：2023-03-28
申请号：US17199371
申请日：2021-03-11
Applicant: RichWave Technology Corp.
Inventor： Yu-Lung Wen
Abstract: An electronic package structure includes: a substrate having an upper surface; a solder mask layer disposed on the upper surface of the substrate, at least one outer side of the solder mask layer being aligned with at least one outer side of the substrate; an electronic component with a first surface provided on the upper surface of the substrate; and a cavity located between the electronic component and the solder mask layer. A first surface of the cavity is formed by the first surface of the electronic component.
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公开(公告)号：US11614515B2
公开(公告)日：2023-03-28
申请号：US17015023
申请日：2020-09-08
Applicant: RichWave Technology Corp.
Inventor： Hsiang-Feng Chi
Abstract: An object recognition method includes generating a first frequency domain signal according to a first echo signal, updating at least one parameter of a primary classifier according to the first frequency domain signal and a training target corresponding to the first frequency domain signal, generating a second frequency domain signal according to a second echo signal, and generating object classification data corresponding to the second frequency domain signal according to the second frequency domain signal and the at least one parameter of the primary classifier. The object classification data is associated with presence of a second object.
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公开(公告)号：US20230061516A1
公开(公告)日：2023-03-02
申请号：US17510399
申请日：2021-10-26
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Yi-Bin Yang
IPC: H03K17/693 , H01P1/10 , H04B1/44
Abstract: A switch device structure includes RF1-st and RF2-nd input terminals, RFA-th, RFB-th and RFC-th output terminals, P2A-th, P1B-th and P1C-th paths, and first and second common paths. The P2A-th path includes a first terminal, and a second terminal coupled to the RFA-th output terminal. The P1B-th path includes a first terminal, and a second terminal coupled to the RFB-th output terminal. The P1C-th path includes a first terminal, and a second terminal coupled to the RFC-th output terminal. The first common path is coupled to the RF2-nd input terminal and the first terminal of the P2A-th path. The second common path is coupled to the RF1-st input terminal, the first terminal of the P1B-th path, and the first terminal of the P1C-th path. The first and second common paths cross each other on different planes to form a crossover.
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