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251.
公开(公告)号:US20200070206A1
公开(公告)日:2020-03-05
申请号:US16679500
申请日:2019-11-11
Applicant: Butterfly Network, Inc.
Inventor: Susan A. Alie , Keith G. Fife , Joseph Lutsky , David Grosjean
Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
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公开(公告)号:US20200066966A1
公开(公告)日:2020-02-27
申请号:US16666238
申请日:2019-10-28
Applicant: Butterfly Network Inc.
Inventor: Jonathan M. Rothberg , Susan A. Alie , Jaime Scott Zahorian , Paul Francis Cristman , Keith G. Fife
IPC: H01L41/27 , H05K3/36 , H01L41/047 , B06B1/06 , B06B1/02
Abstract: An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.
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公开(公告)号:US20200013691A1
公开(公告)日:2020-01-09
申请号:US16502553
申请日:2019-07-03
Applicant: Butterfly Network, Inc.
Inventor: Jianwei Liu , Keith G. Fife
IPC: H01L23/31 , H01L23/498 , H01L21/56 , H01L23/00 , A61B8/00
Abstract: Described herein are methods and apparatuses for packaging an ultrasound-on-a-chip. An ultrasound-on-a-chip may be coupled to a redistribution layer and to an interposer layer. Encapsulation may encapsulate the ultrasound-on-a-chip device and first metal pillars may extend through the encapsulation and electrically couple to the redistribution layer. Second metal pillars may extend through the interposer layer. The interposer layer may include aluminum nitride. The first metal pillars may be electrically coupled to the second metal pillars. A printed circuit board may be coupled to the interposer layer.
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公开(公告)号:US20190388935A1
公开(公告)日:2019-12-26
申请号:US16562821
申请日:2019-09-06
Applicant: Butterfly Network, Inc.
Inventor: Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号:USD870295S1
公开(公告)日:2019-12-17
申请号:US29677069
申请日:2019-01-16
Applicant: Butterfly Network, Inc.
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公开(公告)号:US20190336103A1
公开(公告)日:2019-11-07
申请号:US16401249
申请日:2019-05-02
Applicant: Butterfly Network, Inc.
Inventor: Keith G. Fife , Jianwei Liu
IPC: A61B8/00 , H01L41/113 , H01L41/293
Abstract: Vertical packaging configurations for ultrasound chips are described. Vertical packaging may involve use of integrated interconnects other than wires for wire bonding. Examples of such integrated interconnects include edge-contact vias, through silicon vias and conductive pillars. Edge-contact vias are vias defined in a trench formed in the ultrasound chip. Multiple vias may be provided for each trench, thus increasing the density of vias. Such vias enable electric access to the ultrasound transducers. Through silicon vias are formed through the silicon handle and provide access from the bottom surface of the ultrasound chip. Conductive pillars, including copper pillars, are disposed around the perimeter of an ultrasound chip and provide access to the ultrasound transducers from the top surface of the chip. Use of these types of packaging techniques can enable a substantial reduction in the dimensions of an ultrasound device.
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公开(公告)号:US20190283081A1
公开(公告)日:2019-09-19
申请号:US16364388
申请日:2019-03-26
Applicant: Butterfly Network, Inc.
Inventor: Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号:US20190282207A1
公开(公告)日:2019-09-19
申请号:US16432901
申请日:2019-06-05
Applicant: Butterfly Network, Inc.
Inventor: Kailiang Chen , Nevada J. Sanchez , Christopher Thomas McNulty
Abstract: An exemplary system includes a first ultrasonic transducer assembly configured to deliver high intensity focused ultrasonic (HIFU) energy to a point of interest within a subject, and a second ultrasonic transducer assembly configured to perform imaging of the subject. In another embodiment, a housing is configured to receive an ultrasound probe. The housing may include a cooling circuit and power supply for the ultrasound probe.
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259.
公开(公告)号:US20190275561A1
公开(公告)日:2019-09-12
申请号:US16296476
申请日:2019-03-08
Applicant: Butterfly Network, Inc.
Inventor: Keith G. Fife , Jianwei Liu
IPC: B06B1/02
Abstract: Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).
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公开(公告)号:US20190261955A1
公开(公告)日:2019-08-29
申请号:US16404672
申请日:2019-05-06
Applicant: Butterfly Network, Inc.
Inventor: Kailiang Chen , Nevada J. Sanchez , Susan A. Alie , Tyler S. Ralston , Jonathan M. Rothberg , Keith G. Fife , Joseph Lutsky
Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.
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