公开(公告)号：US20130267079A1

公开(公告)日：2013-10-10

申请号：US13628355

申请日：2012-09-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02529 ,  H01L21/0262

Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

Abstract translation: 描述碳化硅的分子层沉积。 沉积前体包括含有硅，碳和氢的前体分子。 将表面暴露于前体分子导致单层自限制生长。 虽然生长是自限制的，但是在分子层沉积的每个循环期间沉积的厚度涉及多个“原子”层，因此每个循环可以沉积比在原子层沉积期间通常发现的厚度。 从底物处理区域除去前体流出物，然后在再次将层暴露于沉积前体之前照射表面。