公开(公告)号：US20240363392A1

公开(公告)日：2024-10-31

申请号：US18765940

申请日：2024-07-08

申请人： Applied Materials, Inc.

发明人： Daihua Zhang ,  Yingdong Luo ,  Mingwei Zhu ,  Hou T. Ng ,  Sivapackia Ganapathiappan ,  Nag B. Patibandla

IPC分类号： H01L21/70 ,  H01L21/02 ,  H01L21/027 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

CPC分类号： H01L21/70 ,  H01L21/02104 ,  H01L21/027 ,  H01L21/707 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/00 ,  H01L33/0093 ,  H01L33/44 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066

摘要： A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a color conversion layer over each of a plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array.

公开(公告)号：US12131898B2

公开(公告)日：2024-10-29

申请号：US17745182

申请日：2022-05-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Jing-Cheng Lin

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L21/822 ,  H01L23/48 ,  H01L27/06

CPC分类号： H01L21/02104 ,  H01L21/8221 ,  H01L27/0688 ,  H01L21/2007 ,  H01L21/76254 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided that includes operations as follows: bonding an epitaxial layer formed with a first semiconductor substrate and an ion-implanted layer that is formed between the epitaxial layer and the first semiconductor substrate, to a bonding oxide layer of a second semiconductor substrate; separating the first semiconductor substrate from the epitaxial layer, by removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping the epitaxial layer; and forming a first semiconductor device portion on the epitaxial layer, and an interconnect layer on the first semiconductor device portion.

公开(公告)号：US20240249940A1

公开(公告)日：2024-07-25

申请号：US18626475

申请日：2024-04-04

申请人： Tokyo Electron Limited

发明人： Yohei SANO

IPC分类号： H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  H01L21/02 ,  H01L21/324 ,  H05B3/26

CPC分类号： H01L21/0274 ,  G03F7/09 ,  G03F7/20 ,  H01L21/02104 ,  H01L21/324 ,  H05B3/262 ,  H05B2203/022

摘要： A heat treatment device includes: a heating plate configured to support and heat a substrate on which a metal containing resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path being directed toward the substrate; and an exhaust port configured to evacuate inside of the chamber.

公开(公告)号：US20240079486A1

公开(公告)日：2024-03-07

申请号：US18126630

申请日：2023-03-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Wei-Ting CHANG ,  Ching Yu CHEN ,  Jiang-He XIE

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/207

CPC分类号： H01L29/7786 ,  H01L21/02104 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/66462 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L29/207

摘要： A semiconductor structure includes a barrier layer over a channel layer, and a doped layer over the barrier layer. A gate electrode is over the doped layer and a doped interface layer is formed between the barrier layer and the doped layer. The doped interface layer includes a dopant and a metal. The metal has a metal concentration that follows a gradient function from a highest metal concentration to a lowest metal concentration.

公开(公告)号：US11883958B2

公开(公告)日：2024-01-30

申请号：US16434886

申请日：2019-06-07

申请人： Applied Materials, Inc.

发明人： Karuppasamy Muthukamatchy ,  Rajkumar Thanu ,  Eran Weiss ,  Jeffrey C. Hudgens ,  Chandrakant M. Sapkale

IPC分类号： H01L21/677 ,  B25J9/00 ,  B25J9/10 ,  B25J9/16 ,  H01L21/02

CPC分类号： B25J9/0087 ,  B25J9/109 ,  B25J9/161 ,  H01L21/0201 ,  H01L21/02104 ,  H01L21/67742 ,  H01L21/67754

摘要： A robot apparatus may include an upper arm adapted to rotate about a first rotational axis and a forearm rotatably coupled to the upper arm at a second rotational axis. A first wrist member may be rotatably coupled to the forearm at a third rotation axis. A second wrist member may be rotatably coupled to the forearm at the third rotation axis. A first end effector may be coupled to the first wrist member and a second end effector may be coupled to the second wrist member. The first wrist member and the second wrist member may be configured to rotate about the third rotational axis between a first pitch and a second pitch as a function of extension of the robot apparatus. Other apparatus and methods are disclosed.

公开(公告)号：US11871664B1

公开(公告)日：2024-01-09

申请号：US16790537

申请日：2020-02-13

申请人： Qualcomm Technologies Inc.

发明人： Robert J. Littrell ,  Karl Grosh

IPC分类号： H01L41/083 ,  H10N30/50 ,  B06B1/06 ,  H01L21/02 ,  H10N30/87

CPC分类号： H10N30/508 ,  B06B1/064 ,  H01L21/02104 ,  H10N30/871

摘要： A transducer comprising: at least one piezoelectric layer; a first patterned conductive layer that is patterned with a first opening; a second patterned conductive layer that is patterned with a second opening; wherein at least one piezoelectric layer is between the first and the second patterned conductive layers in a stack; and wherein a position of the first opening is staggered relative to a position of the second opening in the stack to mitigate an occurrence of crack propagation through the layers.

公开(公告)号：US20230342016A1

公开(公告)日：2023-10-26

申请号：US17728021

申请日：2022-04-25

申请人： Applied Materials, Inc.

发明人： Jui-Che Lin ,  Yan-Jhu Chen ,  Chao-Hsien Lee ,  Shauh-Teh Juang ,  Pengyu Han ,  Wallace Wang

IPC分类号： G06F3/04847 ,  G06F3/0481 ,  H01L21/02

CPC分类号： G06F3/04847 ,  G06F3/0481 ,  H01L21/02104

摘要： An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to train a machine-learning model based on the input data reflecting the feature. The manufacturing system is further configured to modify the machine-learning model in view of the virtual knob for the feature.

公开(公告)号：US11710888B2

公开(公告)日：2023-07-25

申请号：US17543548

申请日：2021-12-06

申请人： Micron Technology, Inc.

发明人： Owen R. Fay

IPC分类号： H01Q1/22 ,  H01L23/48 ,  H01L21/02

CPC分类号： H01Q1/2283 ,  H01L21/02104 ,  H01L23/481

摘要： Systems and methods of manufacture are disclosed for a semiconductor device assembly having a semiconductor device having a first side and a second side opposite of the first side, a mold compound region adjacent to the semiconductor device, a redistribution layer adjacent to the first side of the semiconductor device, a dielectric layer adjacent to the second side of the semiconductor device, a first via extending through the mold compound region that connects to at least one trace in the dielectric layer, and an antenna structure formed on the dielectric layer and connected to the semiconductor device through the first via.

公开(公告)号：US11670507B2

公开(公告)日：2023-06-06

申请号：US17189702

申请日：2021-03-02

申请人： Lockheed Martin Corporation

发明人： David Glen Findley

IPC分类号： B28B1/00 ,  B33Y30/00 ,  C30B29/04 ,  H01L21/02 ,  B33Y10/00 ,  B33Y70/00 ,  C01B32/05 ,  C01B32/26 ,  C09D11/033 ,  C09D11/037 ,  C01B32/963 ,  C30B7/14 ,  H01L23/15 ,  C30B29/36

CPC分类号： H01L21/02628 ,  B28B1/001 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  C01B32/05 ,  C01B32/26 ,  C01B32/963 ,  C09D11/033 ,  C09D11/037 ,  C30B7/14 ,  H01L21/02104 ,  H01L23/15 ,  C04B2235/6026 ,  C30B29/04 ,  C30B29/36

摘要： In an embodiment, a system includes a three-dimensional (3D) printer, a feedstock, and a laser. The three-dimensional printer includes a platen including an inert metal, and an enclosure including an inert atmosphere. The feedstock is configured to be deposited onto the platen. The feedstock includes a halogenated solution and a nanoparticle having negative electron affinity. The laser is configured to induce the nanoparticle to emit solvated electrons into the halogenated solution to form, by reduction, a ceramic and a diatomic halogen.

公开(公告)号：US20180130653A1

公开(公告)日：2018-05-10

申请号：US15867214

申请日：2018-01-10

申请人： Applied Materials, Inc.

发明人： Joseph M. RANISH

IPC分类号： H01L21/02 ,  H01L21/67 ,  G02B17/00

CPC分类号： H01L21/02104 ,  G02B17/002 ,  H01L21/67115

摘要： Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is positioned to provide radiant energy through an optically transparent dome to a substrate positioned on the substrate support. A light focusing assembly is positioned within the chamber to influence heating and temperature distribution on the substrate and to facilitate formation of a film on a substrate having uniform properties, such as density. The light focusing assembly can include one or more reflectors, light pipes, or refractive lenses.