公开(公告)号：US08548787B2

公开(公告)日：2013-10-01

申请号：US11556828

申请日：2006-11-06

Applicant: Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

Inventor： Naoki Tamaoki ,  Akio Ui ,  Toshiro Takase ,  Takashi Ichikawa

IPC: G06G7/58

CPC classification number: G06F17/5018 ,  C23C14/54 ,  C23C16/52 ,  G06F2217/10

Abstract: A calculating unit calculates either one of a reaction probability between a chemical species used in a semiconductor process and a semiconductor device and a deactivation probability of the chemical species, according to either one of a structure of the semiconductor device and a plurality of materials. A simulation unit performs a simulation of a physical phenomenon occurring in a reaction chamber based on either one of the reaction probability and the deactivation probability.

Abstract translation: 计算单元根据半导体器件的结构和多种材料中的任一种，计算半导体工艺中使用的化学物质与半导体器件之间的反应概率和化学物质的失活概率之一。 模拟单元基于反应概率和去激活概率中的任何一个对反应室中发生的物理现象进行模拟。

公开(公告)号：US20130061870A1

公开(公告)日：2013-03-14

申请号：US13425035

申请日：2012-03-20

Applicant: Akio Ui ,  Masato Akita

Inventor： Akio Ui ,  Masato Akita

IPC: B08B7/04 ,  B08B5/00

CPC classification number: B08B7/00 ,  C23C16/4405 ,  C30B25/08

Abstract: In one embodiment, a method of cleaning a film forming apparatus includes: plasmatizing cleaning gas having at least one of the group consisting of chlorine gas, hydrocarbon gas, and chlorinated hydrocarbon gas; and supplying the plasmatized cleaning gas to a heated inner part of the film forming apparatus.

Abstract translation: 在一个实施例中，一种清洗成膜装置的方法包括：将具有氯气，烃气和氯化烃气体组中的至少一种的清洗气体等离子化; 以及将所述等离子体化清洁气体供应到所述成膜设备的加热内部。

公开(公告)号：US20120080408A1

公开(公告)日：2012-04-05

申请号：US13051771

申请日：2011-03-18

Applicant: Akio UI ,  Hisataka Hayashi

Inventor： Akio UI ,  Hisataka Hayashi

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract translation: 使用基板处理装置的基板处理方法包括第一步骤和第二步骤。 第一步是施加来自脉冲电源的负电压脉冲以包括在装置中。 第二步是在负电压脉冲与负电压脉冲之后的脉冲电源的负电压脉冲和正电压脉冲之间施加浮动电位。 此外，该装置包括腔室，第一电极，第二电极，RF电源和脉冲电源。 第二电极设置成使得第二电极面对第一电极以保持基板。 RF电源对第二电极施加频率为50MHz以上的RF电压。 脉冲电源将具有RF电压的电压波形重复地施加到第二电极。

公开(公告)号：US07851367B2

公开(公告)日：2010-12-14

申请号：US11724308

申请日：2007-03-15

Applicant: Akio Ui

Inventor： Akio Ui

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01J37/32137 ,  C23C16/515 ,  H01J37/32091

Abstract: A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage.

Abstract translation: 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及用于向RF电极施加脉冲电压以与RF电压叠加的脉冲电压施加装置。

公开(公告)号：US20090194508A1

公开(公告)日：2009-08-06

申请号：US12363070

申请日：2009-01-30

Applicant: Akio UI ,  Naoki TAMAOKI ,  Takashi ICHIKAWA ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

Inventor： Akio UI ,  Naoki TAMAOKI ,  Takashi ICHIKAWA ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Abstract translation: 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。