公开(公告)号：US20130061870A1

公开(公告)日：2013-03-14

申请号：US13425035

申请日：2012-03-20

申请人： Akio Ui ,  Masato Akita

发明人： Akio Ui ,  Masato Akita

IPC分类号： B08B7/04 ,  B08B5/00

CPC分类号： B08B7/00 ,  C23C16/4405 ,  C30B25/08

摘要： In one embodiment, a method of cleaning a film forming apparatus includes: plasmatizing cleaning gas having at least one of the group consisting of chlorine gas, hydrocarbon gas, and chlorinated hydrocarbon gas; and supplying the plasmatized cleaning gas to a heated inner part of the film forming apparatus.

摘要翻译： 在一个实施例中，一种清洗成膜装置的方法包括：将具有氯气，烃气和氯化烃气体组中的至少一种的清洗气体等离子化; 以及将所述等离子体化清洁气体供应到所述成膜设备的加热内部。

公开(公告)号：US20080057222A1

公开(公告)日：2008-03-06

申请号：US11724308

申请日：2007-03-15

申请人： Akio Ui

发明人： Akio Ui

IPC分类号： H05H1/02 ,  C23C16/00

CPC分类号： H01J37/32137 ,  C23C16/515 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及用于向RF电极施加脉冲电压以与RF电压叠加的脉冲电压施加装置。

公开(公告)号：US08252193B2

公开(公告)日：2012-08-28

申请号：US12052522

申请日：2008-03-20

申请人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

发明人： Akio Ui ,  Takashi Ichikawa ,  Naoki Tamaoki ,  Hisataka Hayashi ,  Akihiro Kojima

IPC分类号： G01R31/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165

摘要： A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; an opposing electrode which is disposed opposite to the RF electrode in the chamber; an RF voltage applying device for applying an RF voltage with a predetermined frequency to the RF electrode; and a pulsed voltage applying device for applying a pulsed voltage to the RF electrode so as to be superimposed with the RF voltage and which includes a controller for controlling a timing in application of the pulsed voltage and defining a pause period of the pulsed voltage.

摘要翻译： 基板等离子体处理装置包括在预定的真空条件下将内部抽真空的室; RF电极，其设置在所述室中并且构造成在其主表面上保持要处理的基板; 在所述室中与所述RF电极相对设置的对置电极; RF电压施加装置，用于向RF电极施加预定频率的RF电压; 以及脉冲电压施加装置，用于向RF电极施加脉冲电压以与RF电压叠加，并且包括用于控制施加脉冲电压的定时并且限定脉冲电压的暂停时段的控制器。

公开(公告)号：US20080053818A1

公开(公告)日：2008-03-06

申请号：US11889518

申请日：2007-08-14

申请人： Akio Ui

发明人： Akio Ui

IPC分类号： B01J19/08 ,  B05C11/00 ,  H01L21/306

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

摘要： A first RF voltage and a second RF voltage are applied to an RF electrode disposed opposite to an opposing electrode in a chamber of which the interior is evacuated under a predetermined vacuum condition from a first RF voltage applying device and a second RF voltage applying device, respectively. The second frequency of the second RF voltage is set to ½×n (n: integral number) of the first frequency of the first RF voltage through the phase control with a gate trigger device so that the first RF voltage is superimposed with the second RF voltage.

摘要翻译： 将第一RF电压和第二RF电压施加到在来自第一RF电压施加装置和第二RF电压施加装置的预定真空条件下将内部抽真空的室中与相对电极相对设置的RF电极， 分别。 通过具有栅极触发装置的相位控制将第二RF电压的第二频率设置为第一RF电压的第一频率的1/2xn（n：整数），使得第一RF电压与第二RF电压叠加。

公开(公告)号：US07247888B2

公开(公告)日：2007-07-24

申请号：US11067640

申请日：2005-02-28

申请人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

发明人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L21/68757 ,  C23C16/4585 ,  C23C16/5093 ,  H01J37/32633 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/68735 ,  H01L29/0661

摘要： There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

摘要翻译： 这里公开了一种成膜环，其包括环形主体，该环形主体由绝缘材料制成并且沿着基板的边缘形成为环状，在该边缘上施加以等离子体状态的原料气体的成膜工艺，以及 环形主体的内缘形成得比其外侧部分高。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US20050191811A1

公开(公告)日：2005-09-01

申请号：US11067640

申请日：2005-02-28

申请人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

发明人： Hirotaka Ogihara ,  Yukio Nishiyama ,  Akio Ui ,  Takashi O

IPC分类号： H01L21/31 ,  C23C16/458 ,  C23C16/509 ,  H01L21/00 ,  H01L21/336 ,  H01L21/687 ,  H01L29/06

CPC分类号： H01L21/68757 ,  C23C16/4585 ,  C23C16/5093 ,  H01J37/32633 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/68735 ,  H01L29/0661

摘要： There is here disclosed a film forming ring comprising a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

摘要翻译： 这里公开了一种成膜环，其包括由绝缘材料制成的环形主体，并且沿着基板的边缘形成为环状，在该边缘上施加以等离子体状态的原料气体的成膜工艺，以及 环形主体的内缘形成得比其外侧部分高。

公开(公告)号：US5403630A

公开(公告)日：1995-04-04

申请号：US141636

申请日：1993-10-27

申请人： Isao Matsui ,  Akio Ui

发明人： Isao Matsui ,  Akio Ui

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  H01L21/31 ,  B05D3/06 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/452

摘要： A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.

摘要翻译： 一种气相生长方法，包括以下步骤：将含硅气体和臭氧引入含有样品的反应容器中，并将通过将氧气或含氧气体激发而获得的激发氧引入反应容器中 将含硅气体和臭氧引入反应容器中之前，之前或之后。 含硅气体和臭氧反应，形成可以容易冷凝的中间产物。 中间产物与激发的氧反应，从而形成薄的绝缘膜，其具有优异的台阶覆盖性和良好的绝缘性能。

公开(公告)号：US5205870A

公开(公告)日：1993-04-27

申请号：US890145

申请日：1992-05-29

申请人： Yuusuke Sato ,  Akio Ui ,  Keiichi Akagawa ,  Toshimitsu Ohmine

发明人： Yuusuke Sato ,  Akio Ui ,  Keiichi Akagawa ,  Toshimitsu Ohmine

IPC分类号： H01L21/205 ,  C23C16/48

CPC分类号： C23C16/483

摘要： An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.

摘要翻译： 氩（Ar +）激光器具有谐振器。 在谐振器中一体地形成反应室。 电压被施加到电极，其放电以激发谐振器中的氩原子以产生激光束。 激光束在设置在谐振器的相对端的全反射镜之间连续振荡。 基板被设置在反应室中，材料气体被引入到该反应室中。 材料气体吸收激光束，在衬底上分解和沉积成薄膜。

公开(公告)号：US09583360B2

公开(公告)日：2017-02-28

申请号：US13424952

申请日：2012-03-20

申请人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

发明人： Akio Ui ,  Hisataka Hayashi ,  Keisuke Kikutani

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32174

摘要： In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage.

摘要翻译： 在一个实施例中，基板处理装置包括：腔室; 设置在所述室中的第一电极; 设置在所述腔室中以面对所述第一电极并且保持衬底的第二电极; RF电源，向第二电极施加频率为50MHz以上的RF电压; 以及脉冲电源，用于在叠加在RF电压上的同时，将包括负电压脉冲和负电压脉冲的延迟时间的正电压脉冲的电压波形重复地施加到第二电极50纳秒以下。