公开(公告)号：US20080157134A1

公开(公告)日：2008-07-03

申请号：US11948815

申请日：2007-11-30

Applicant: Chang Eun LEE

Inventor： Chang Eun LEE

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A CMOS image sensor and method the same are disclosed. The method comprises forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate, forming a plurality of metal lines within the insulating interlayer, sequentially forming an oxide layer and a passivation layer on the insulating interlayer, forming a TEOS layer on the passivation layer, forming a planarization layer on a portion of the TEOS layer, and forming a microlens on the planarization layer.

Abstract translation: 公开了一种CMOS图像传感器及其方法。 该方法包括在半导体衬底上形成包含多个光电二极管的绝缘中间层，在绝缘中间层内形成多个金属线，在绝缘中间层上依次形成氧化物层和钝化层，在钝化层上形成TEOS层 在TEOS层的一部分上形成平坦化层，并在平坦化层上形成微透镜。

公开(公告)号：US20080149926A1

公开(公告)日：2008-06-26

申请号：US11961790

申请日：2007-12-20

Applicant: Chang Eun LEE

Inventor： Chang Eun LEE

IPC: H01L23/58 ,  H01L21/66

CPC classification number: H01L22/34

Abstract: A semiconductor device having a test pattern for measuring epitaxial pattern shift is provided. The test pattern includes a semiconductor substrate having a first pattern formed therein; a first impurity region formed in the semiconductor substrate; an epitaxial layer formed on the semiconductor substrate, the epitaxial layer having a second pattern formed therein, wherein the second pattern corresponds to the first pattern; and a second impurity region formed in the epitaxial layer, the second impurity region in electrical contact with the first impurity region.

Abstract translation: 提供了具有用于测量外延图案偏移的测试图案的半导体器件。 测试图案包括其中形成有第一图案的半导体衬底; 形成在所述半导体衬底中的第一杂质区; 形成在所述半导体衬底上的外延层，所述外延层具有形成在其中的第二图案，其中所述第二图案对应于所述第一图案; 以及形成在所述外延层中的第二杂质区，所述第二杂质区与所述第一杂质区电接触。

公开(公告)号：US20080048221A1

公开(公告)日：2008-02-28

申请号：US11841029

申请日：2007-08-20

Applicant: Chang-Eun Lee

Inventor： Chang-Eun Lee

IPC: H01L27/146 ,  H01L31/062 ,  H01L31/18

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, ions of low concentration may be implanted into a photodiode region of a semiconductor substrate to form a photodiode. At least one gate insulating layer pattern may be formed on the semiconductor substrate, and a gate electrode may be formed on each of the at least one gate insulating layer pattern to receive charges from the photodiode. Spacers may be formed at sidewalls of the gate electrode, respectively. A selective epitaxial growth layer may be formed on the photodiode, and ions of low concentration may be obliquely implanted into one side and the other side of the gate electrode to form a low concentration source and a low concentration drain extending below the spacer. Subsequently, a high concentration source and a high concentration drain may be formed on both sides of the gate electrode, respectively.

Abstract translation: 实施例涉及图像传感器和图像传感器的制造方法。 根据实施例，可以将低浓度的离子注入到半导体衬底的光电二极管区域中以形成光电二极管。 可以在半导体衬底上形成至少一个栅极绝缘层图案，并且可以在至少一个栅极绝缘层图案中的每一个上形成栅电极以从光电二极管接收电荷。 分隔件可分别形成在栅电极的侧壁。 可以在光电二极管上形成选择性外延生长层，并且可以将低浓度的离子倾斜地注入到栅电极的一侧和另一侧，以形成在间隔物下方延伸的低浓度源和低浓度漏极。 随后，可以分别在栅电极的两侧形成高浓度源和高浓度漏极。

公开(公告)号：US08643143B2

公开(公告)日：2014-02-04

申请号：US13355022

申请日：2012-01-20

Applicant: Chang Eun Lee

Inventor： Chang Eun Lee

IPC: H01L29/00

CPC classification number: H01L28/24 ,  H01L21/32139 ,  H01L23/522 ,  H01L23/5228 ,  H01L27/016 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device including a metal dummy pattern and a thin film resistor. In detail, a semiconductor device includes a semiconductor substrate, a thin film resistor, and a metal dummy pattern. The thin film resistor disposed over the semiconductor substrate and extending in a first direction relative to the semiconductor substrate. The metal dummy pattern disposed between the semiconductor substrate and the thin film resistor, the metal dummy pattern including a reflective pattern extending in the first direction semiconductor substrate and spatially corresponding to a periphery of the thin film resistor.

Abstract translation: 提供了包括金属虚设图案和薄膜电阻器的半导体器件。 具体地，半导体器件包括半导体衬底，薄膜电阻器和金属虚设图案。 薄膜电阻器设置在半导体衬底上并相对于半导体衬底在第一方向上延伸。 设置在半导体衬底和薄膜电阻器之间的金属虚拟图案，金属虚设图案包括在第一方向半导体衬底上延伸并且在空间上对应于薄膜电阻器的周边的反射图案。

公开(公告)号：US07983285B2

公开(公告)日：2011-07-19

申请号：US11721951

申请日：2005-12-16

Applicant: Chang-eun Lee ,  Jun-hee Park ,  Young-sung Son ,  Dong-hee Kim ,  Kyeong-deok Moon ,  Yu-seok Bae

Inventor： Chang-eun Lee ,  Jun-hee Park ,  Young-sung Son ,  Dong-hee Kim ,  Kyeong-deok Moon ,  Yu-seok Bae

IPC: H04L12/56 ,  H04J3/22

CPC classification number: H04L12/2805 ,  H04L12/2832 ,  H04L67/28 ,  H04L67/2823 ,  H04L2012/2849

Abstract: Provided is a home-network UMB system and a method thereof for providing interoperability between devices connected one another through different types of middlewares in a home network. The home-network UMB system includes: a bridge core for establishing/releasing a connection between bridge adaptors of different types of middlewares and analyzing/transferring a universal middleware message in order to interoperate devices connected through different types of middlewares existed on a home network; and a plurality of bridge adaptor for connecting the bridge core to a corresponding middleware, and finding/releasing different types of devices, controlling/monitoring different types of devices and registering/creating an event for different types of devices through transforming a universal middleware bridge message to a local message of each middleware and vice versa.

Abstract translation: 提供了家庭网络UMB系统及其方法，用于通过家庭网络中的不同类型的中间件在彼此连接的设备之间提供互操作性。 家庭网络UMB系统包括：用于建立/释放不同类型中间件的桥接适配器之间的连接的桥接核心，并且分析/传送通用中间件消息以便通过不同类型的中间设备连接的设备进行互操作存在于家庭网络上; 以及多个桥接器，用于将桥接核心连接到相应的中间件，并且通过转换通用中间件桥接消息来查找/释放不同类型的设备，控制/监视不同类型的设备以及为不同类型的设备注册/创建事件 到每个中间件的本地消息，反之亦然。

公开(公告)号：US20100164044A1

公开(公告)日：2010-07-01

申请号：US12646594

申请日：2009-12-23

Applicant: Chang-Eun Lee

Inventor： Chang-Eun Lee

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14603 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469

Abstract: An image sensor includes first to fourth image sensing sections symmetrically aligned in a form of a 2×2 matrix, first to fourth pixel arrays aligned in the first to fourth image sensing sections, respectively, in adjacent to each other, and first to fourth peripheral circuit parts aligned at peripheral portions of the first to fourth image sensing sections. A middle-size CMOS image sensor is provided that is suitable for the available field size of conventional photo equipment, so the manufacturing cost may be minimized and price competitiveness may be maximized while providing high-quality images with high pixel resolution.

Abstract translation: 图像传感器包括分别以彼此相邻的第一至第四图像感测部分中对齐的2×2矩阵，第一至第四像素阵列对称地对准的第一至第四图像感测部分，以及第一至第四周边 电路部分对准在第一至第四图像感测部分的周边部分。 提供了适用于常规照相设备可用现场尺寸的中等尺寸CMOS图像传感器，因此可以最小化制造成本，同时提供具有高像素分辨率的高质量图像的价格竞争力。

公开(公告)号：US20100135308A1

公开(公告)日：2010-06-03

申请号：US12548648

申请日：2009-08-27

Applicant: Kwangil LEE ,  Jun Hee PARK ,  Chang Eun LEE ,  Kyeong Deok MOON

Inventor： Kwangil LEE ,  Jun Hee PARK ,  Chang Eun LEE ,  Kyeong Deok MOON

IPC: H04L12/56

CPC classification number: H04L12/66 ,  H04L12/4625 ,  H04L63/0227 ,  H04L63/16 ,  H04L2012/40286

Abstract: An integrated gateway apparatus includes a policy storage for storing therein a first information on message filtering and switching policies for messages received from heterogeneous devices in lower networks via network interfaces; a device management unit for extracting a second information on the messages, the devices and the network interfaces; a layer-basis filter unit for performing, based on the first and the second information, the message filtering and switching on the messages on a layer basis; and an integrated switch management unit for providing the first information to the layer-basis filter unit and controlling the layer-basis filtering unit. The layer-basis filter unit includes a switch filter unit, a route filter unit and a gateway filter unit for performing the message filtering and switching in a MAC layer, in a network layer and a transport layer and in an application layer, respectively.

Abstract translation: 集成网关装置包括策略存储器，用于在其中存储关于消息过滤的第一信息和用于经由网络接口​​从下级网络中的异构设备接收的消息的交换策略; 用于提取关于消息，设备和网络接口的第二信息的设备管理单元; 层次滤波器单元，用于基于第一和第二信息，以层为基础来执行消息过滤和消息上的切换; 以及用于将所述第一信息提供给所述层基滤波器单元并且控制所述基于层的滤波单元的集成交换管理单元。 层基滤波器单元包括交换滤波器单元，路由滤波器单元和网关滤波器单元，用于分别在网络层，传输层和应用层中执行MAC层中的消息过滤和交换。

公开(公告)号：US20080120405A1

公开(公告)日：2008-05-22

申请号：US11943066

申请日：2007-11-20

Applicant: Young-Sung SON ,  Chang-Eun LEE ,  Tai-Yeon KU ,  Jun-Hee PARK ,  Dong-Hee KIM ,  Kyeong-Deok MOON

Inventor： Young-Sung SON ,  Chang-Eun LEE ,  Tai-Yeon KU ,  Jun-Hee PARK ,  Dong-Hee KIM ,  Kyeong-Deok MOON

IPC: G06F15/16

CPC classification number: H04L41/5058 ,  H04L12/2809 ,  H04L12/281 ,  H04L2012/285

Abstract: Provided are an apparatus and a method for searching/managing a home network service based on a home network condition. The apparatus, includes: a service storing unit for storing a home network service; a device information analyzing unit for analyzing home network device information and checking a type of the home network device information; a service searching unit for searching a related home network service list according to the type of the home network device information in the home network service list; and a service operation managing unit for installing the home network service upon installation request of the user in the list of the searched home network service, and managing an operation of the home network service upon operation request of the user in the list of the installed home network service.

Abstract translation: 提供了一种基于家庭网络条件来搜索/管理家庭网络服务的装置和方法。 该装置包括：存储家庭网络服务的服务存储单元; 设备信息分析单元，用于分析家庭网络设备信息并检查家庭网络设备信息的类型; 服务搜索单元，用于根据家庭网络服务列表中的家庭网络设备信息的类型搜索相关的家庭网络服务列表; 以及服务操作管理单元，用于在所搜索的家庭网络服务的列表中安装用户的安装请求时安装家庭网络服务，以及根据用户在安装的家庭列表中的操作请求来管理家庭网络服务的操作 网络服务。

公开(公告)号：US07348202B2

公开(公告)日：2008-03-25

申请号：US11320701

申请日：2005-12-30

Applicant: Chang Eun Lee

Inventor： Chang Eun Lee

IPC: H01L21/00

CPC classification number: H01L27/14627 ,  H01L27/14632 ,  H01L27/14687

Abstract: An image sensor includes a semiconductor substrate; a pixel array disposed on the semiconductor substrate; and an insulating interlayer, formed on the semiconductor substrate, having a trench coinciding with the disposition of the pixel array, the trench having uniformly inclined inner sidewalls.

Abstract translation: 图像传感器包括半导体衬底; 设置在所述半导体基板上的像素阵列; 以及形成在所述半导体基板上的具有与所述像素阵列的配置重合的沟槽的绝缘夹层，所述沟槽具有均匀倾斜的内侧壁。

公开(公告)号：US07232731B2

公开(公告)日：2007-06-19

申请号：US11023522

申请日：2004-12-29

Applicant: Sang Gi Lee ,  Chang Eun Lee

Inventor： Sang Gi Lee ,  Chang Eun Lee

IPC: H01L21/336 ,  H01L21/44 ,  H01L21/4763

CPC classification number: H01L29/66545 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for fabricating a transistor of semiconductor is disclosed. A disclosed method comprises: forming an STI structure and a well region in a silicon substrate; forming a first dummy gate electrode including spacers and a first gate oxide layer on the well region; forming source and drain regions including an LDD structure around the first dummy gate electrode by using the first dummy gate electrode and the spacers as a ion implantation mask, and performing a thermal treatment; removing the first dummy gate electrode and the first gate oxide layer under the first dummy gate electrode; forming a second dummy gate electrode and a second gate oxide layer; forming a thin nitride layer and a PMD on the silicon substrate including the second dummy gate electrode; performing a CMP process for the thin nitride layer and the PMD until the top of the spacers is exposed; removing the second dummy gate electrode and the second gate oxide layer; forming a third gate oxide layer and polysilicon for a gate electrode; performing another CMP process until the top of the spacers is exposed; and additionally etching the upper portion of the gate electrode.

Abstract translation: 公开了半导体晶体管的制造方法。 所公开的方法包括：在硅衬底中形成STI结构和阱区; 在所述阱区上形成包括间隔物和第一栅极氧化物层的第一虚拟栅电极; 通过使用第一伪栅极电极和间隔物作为离子注入掩模，在第一伪栅电极周围形成包括LDD结构的源区和漏区，并进行热处理; 去除所述第一虚拟栅电极下方的所述第一伪栅极电极和所述第一栅极氧化物层; 形成第二虚拟栅极电极和第二栅极氧化物层; 在包括所述第二虚设栅电极的所述硅衬底上形成薄氮化物层和PMD; 对薄氮化物层和PMD进行CMP处理，直到间隔物的顶部露出为止; 去除所述第二虚拟栅极电极和所述第二栅极氧化物层; 形成用于栅电极的第三栅极氧化物层和多晶硅; 执行另一CMP工艺，直到间隔件的顶部露出为止; 并且还蚀刻栅电极的上部。