利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

245 条记录 (耗时 0.03 秒)

    Method of manufacturing an array substrate for LCD device having double-layered metal structure
    22.
    发明授权
    Method of manufacturing an array substrate for LCD device having double-layered metal structure 有权
    制造具有双层金属结构的LCD装置阵列基板的方法

    公开(公告)号：US07956949B2

    公开(公告)日：2011-06-07

    申请号：US12761174

    申请日：2010-04-15

    申请人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

    发明人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

    IPC分类号： G02F1/136

    CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

    摘要： An array substrate in a liquid crystal display device includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation laver; an active layer and an ohmic contact layer; a data line, source and drain electrodes, and a data pad each having a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer formed of a transparent conductive material.

    摘要翻译： 液晶显示装置中的阵列基板包括在基板上的栅电极，栅极线和栅极焊盘，其中栅电极，栅极线和栅极焊盘具有由第一金属层和第二金属层构成的双层结构， 从所述基板串联的第一阻挡金属层，其中所述第一金属是铝和铝合金之一; 门绝缘紫菜; 有源层和欧姆接触层; 数据线，源极和漏极以及数据焊盘，每个数据焊盘具有由第二阻挡金属层和第二金属层构成的双层结构; 钝化层; 以及由透明导电材料形成的钝化层上的像素电极，栅极焊盘端子和数据焊盘端子。

    Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation
    24.
    发明申请
    Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation 有权
    使用接触孔隔离器形成集成电路器件以改善接触隔离的方法

    公开(公告)号：US20110104889A1

    公开(公告)日：2011-05-05

    申请号：US12965091

    申请日：2010-12-10

    申请人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Chol ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

    发明人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Chol ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76897 ,  H01L21/76831

    摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

    摘要翻译： 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

    Data integrated circuit and apparatus for driving plasma display panel using the same
    26.
    发明授权
    Data integrated circuit and apparatus for driving plasma display panel using the same 失效
    用于驱动等离子体显示面板的数据集成电路和装置

    公开(公告)号：US07893891B2

    公开(公告)日：2011-02-22

    申请号：US11156465

    申请日：2005-06-21

    申请人： Jin Young Kim ,  Seung Woo Woo

    发明人： Jin Young Kim ,  Seung Woo Woo

    IPC分类号： G09G3/28

    CPC分类号： G09G3/296 ,  G09G3/288 ,  G09G2300/0426 ,  G09G2320/0233

    摘要： An integrated circuit (IC) device for controlling a plurality of electrodes in a plasma display device, and a plasma display device including one or more IC devices, are provided. The IC device includes a plurality of output parts coupled to the plurality of electrodes, first and second terminals coupled to end portions of the IC device, and at least one third terminal between the first and second terminals and to supply a predetermined voltage to the IC device.

    摘要翻译： 提供一种用于控制等离子体显示装置中的多个电极的集成电路（IC）装置和包括一个或多个IC装置的等离子体显示装置。 IC器件包括耦合到多个电极的多个输出部分，耦合到IC器件的端部的第一和第二端子以及第一和第二端子之间的至少一个第三端子，并且向IC提供预定电压 设备。

    Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation
    28.
    发明授权
    Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation 有权
    使用接触孔间隔物形成集成电路器件以改善接触隔离的方法

    公开(公告)号：US07875551B2

    公开(公告)日：2011-01-25

    申请号：US12575682

    申请日：2009-10-08

    申请人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Choi ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

    发明人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Choi ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

    IPC分类号： H01L23/58

    CPC分类号： H01L21/76897 ,  H01L21/76831

    摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

    摘要翻译： 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 该接触孔可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层而形成，并以较快的第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

    METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE
    30.
    发明申请
    METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE 有权
    具有双层金属结构的液晶显示装置制造阵列基板的方法

    公开(公告)号：US20100203687A1

    公开(公告)日：2010-08-12

    申请号：US12761174

    申请日：2010-04-15

    申请人： Won-Ho CHO ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

    发明人： Won-Ho CHO ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

    IPC分类号： H01L21/86

    CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

    摘要： The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.

    摘要翻译： 本发明是一种用于液晶显示装置的阵列基板，其包括在基板上的栅电极，栅极线和栅极焊盘，其中栅电极，栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成，其中第一金属是铝和铝合金之一; 覆盖栅电极，栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线，与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘，其中，数据线，源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线，源极和漏极以及数据焊盘的钝化层，其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔， 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极，栅极焊盘端子和数据焊盘端子，所有这些都由钝化层上的透明导电材料形成。