摘要:
An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H2O2), a phosphate, F-ions, an organic acid having a carboxyl group (—COOH), a copper (Cu) inhibitor, and a hydrogen peroxide (H2O2) stabilizer, wherein each of the double-layered signal lines and electrodes of the liquid crystal display device includes a first layer of one of aluminum (Al), aluminum alloy (Al-alloy), titanium (Ti), titanium alloy (Ti-alloy), tantalum (Ta), and a tantalum alloy (Ta-alloy) and a second layer of copper (Cu).
摘要翻译:用于形成液晶显示装置的双层信号线和电极的蚀刻剂包括过氧化氢(H 2 O 2),磷酸盐,F-离子,具有羧基的有机酸(-COOH),铜(Cu)抑制剂, 和二氧化氢(H 2 O 2)稳定剂,其中液晶显示装置的双层信号线和电极中的每一个包括铝(Al),铝合金(Al合金),钛(Ti) ,钛合金(Ti合金),钽(Ta)和钽合金(Ta合金)和第二铜(Cu)层。
摘要:
An array substrate for a liquid crystal display device includes a gate electrode, a gate line and a gate pad electrode disposed on a substrate, each of the gate electrode, the gate line and the gate pad electrode having a first metal barrier layer, a first copper alloy layer, and a first out-diffusion film, and the first out-diffusion film completely covering, surrounding and contacting entire surfaces of the first copper alloy layer. The array substrate includes a gate insulation layer disposed on the substrate and covering the gate electrode, the gate line and the gate pad electrode. An active layer and an ohmic contact layer are sequentially formed on the gate insulation layer and over the gate electrode. A data line is formed on the gate insulation layer and perpendicularly crosses the gate line. A source electrode and a drain electrode contact the ohmic contact layer.
摘要:
An array substrate in a liquid crystal display device includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation laver; an active layer and an ohmic contact layer; a data line, source and drain electrodes, and a data pad each having a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer formed of a transparent conductive material.
摘要:
The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
摘要:
The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
摘要:
The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.
摘要:
The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
摘要:
The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
摘要:
An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H2O2), a phosphate, F-ions, an organic acid having a carboxyl group (—COOH), a copper (Cu) inhibitor, and a hydrogen peroxide (H2O2) stabilizer, wherein each of the double-layered signal lines and electrodes of the liquid crystal display device includes a first layer of one of aluminum (Al), aluminum alloy (Al-alloy), titanium (Ti), titanium alloy (Ti-alloy), tantalum (Ta), and a tantalum alloy (Ta-alloy) and a second layer of copper (Cu).
摘要翻译:用于形成液晶显示装置的双层信号线和电极的蚀刻剂包括过氧化氢(H 2 O 2),磷酸盐,F-离子,具有羧基的有机酸(-COOH),铜(Cu)抑制剂, 和二氧化氢(H 2 O 2)稳定剂,其中液晶显示装置的双层信号线和电极中的每一个包括铝(Al),铝合金(Al合金),钛(Ti) ,钛合金(Ti合金),钽(Ta)和钽合金(Ta合金)和第二铜(Cu)层。
摘要:
A method of forming an array substrate for a LCD device includes patterning a first metal layer and a first barrier metal layer to form a gate electrode, a gate line and a gate pad; forming a gate insulation layer to cover the gate electrode, line and pad; forming an active layer, an ohmic contact layer, a second barrier metal layer and a second metal layer including a copper (Cu) layer on the gate insulation layer; patterning the second metal layer and the second barrier metal layer by a first etching process; patterning an exposed portion of the second metal layer and the second barrier metal layer and ohmic contact layer to form source and drain electrodes each having a double layered structure of the second barrier metal layer and the second metal layer; and forming a pixel electrode on a passivation layer formed on the source and drain electrodes.