摘要:
An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming an encapsulation thin film and then etching at least one portion of the encapsulation thin film; and 4) forming an auxiliary electrode which is electrically connected to the first electrode exposed in the step 3). The organic light-emitting device according to the exemplary embodiment of the present invention may solve problems of a voltage drop due to resistance of a transparent electrode in a longitudinal direction and of resultant brightness non-uniformity of the diode.
摘要:
The present invention provides an organic light emitting device in which a layer having a refractive index in the range of 1.3 to 3 is further formed on an upper electrode of at least one region of regions through which rays having red, green, and blue colors are passed and a method of manufacturing the organic light emitting device. An optical length that can cause the microcavity effect according to the type of color of emitted light is controlled by using the layer to manufacture the organic light emitting device having high light emitting efficiency.
摘要:
The present invention provides an organic light emitting device, wherein an electron injecting electrode, at least one organic material layer including a light emitting layer, and a hole injecting electrode are laminated; and an inorganic insulating layer formed from the materials having a band gap of 3.3 eV or more, and a band offset of 0.45 eV or less, is provided between the electron injecting electrode and the organic material layer; and a method for preparing the same.
摘要:
The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.
摘要:
Disclosed is a method of manufacturing an organic light emitting device, an organic light emitting device manufactured by using the method, and an electronic device including the organic light emitting device. The method includes (a) forming an insulating layer on a lower electrode, (b) etching the insulating layer to form an opening ranging from an upper surface of the insulating layer to the lower electrode so that an overhang structure having a lowermost circumference that is larger than an uppermost circumference is formed, (c) forming a conductive layer on an upper surface of the lower electrode in the opening and a surface of the insulating layer other than the overhang structure, (d) forming an organic material layer on the conductive layer formed on the upper surface of the lower electrode in the opening, and (e) forming an upper electrode on an upper surface of the conductive layer disposed on the upper surface of the insulating layer and an upper surface of the organic material layer.
摘要:
Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer.
摘要:
The present invention provides a fabrication method for an organic electronic device comprising a step of stacking sequentially a first electrode made of a metal, one or more organic material layers, and a second electrode on a substrate, wherein the method comprises the steps of: 1) forming a layer on the first electrode using a metal having a higher oxidation rate than the first electrode before forming the organic material layer, 2) treating the layer formed using a metal having a higher oxidation rate than the first electrode with oxygen plasma to form a metal oxide layer, and 3) treating the metal oxide layer with inert gas plasma to remove a native oxide layer on the first electrode, and an organic electronic device fabricated by the same method.
摘要:
The present invention provides a stacked organic light emitting device, comprising a first conductive layer, at least one intermediate conductive layer and a second conductive layer, and light emitting units disposed between the conductive layers, wherein at least two non-neighboring conductive layers among the conductive layers are conductive layers belonging to Group 1 such that they are electrically connected with each other to a common potential; at least one non-neighboring conductive layer among the conductive layers which are not electrically connected with the conductive layers belonging to Group 1 to a common potential are conductive layers belonging to Group 2 such that they are electrically connected with each other to a common potential; and the conductive layers belonging to Group 1 and the conductive layers belonging to Group 2 are connected with each other via a voltage regulator for alternately applying a positive voltage and a negative voltage.
摘要:
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein the dielectric layer includes a lower dielectric region contacting the lower electrode, an upper dielectric region contacting the upper electrode, and at least one middle dielectric region between the lower dielectric region and the upper dielectric region, the at least one middle dielectric region having a less crystalline region than both the lower dielectric region and the upper dielectric region.
摘要:
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein the dielectric layer includes a lower dielectric region contacting the lower electrode, an upper dielectric region contacting the upper electrode, and at least one middle dielectric region between the lower dielectric region and the upper dielectric region, the at least one middle dielectric region having a less crystalline region than both the lower dielectric region and the upper dielectric region.