摘要:
A sensor for a magnetic random-access memory (MRAM) of an embodiment of the invention includes an amplifier having at least two inputs and at least two outputs. The inputs are coupled to a magnetic storage element of the MRAM having a resistance corresponding to a value stored thereby and the outputs provide an output voltage corresponding to the resistance of the magnetic storage element. The sensor comprises a chopper switch coupled between one input of the amplifier and the magnetic storage element, a chopper switch coupled between another input of the amplifier and the magnetic storage element, and a chopper switch coupled between the outputs of the amplifier.
摘要:
Systems and methods for controlling communication with nonvolatile memory devices via a memory bus are provided. Briefly described, one of many possible embodiments is a system comprising a memory controller in communication with a memory bus, the memory controller configured to control communication with at least one nonvolatile memory device by configuring the at least one nonvolatile memory device, via the memory bus, with a unique device identifier.
摘要:
A memory device, which includes a matrix of memory cells, and an arrangement of write lines electrically isolated from the memory cells. The write lines may be configured to write data to the memory cells, each write line of the arrangement being electrically coupled to a reverse current limiting device.
摘要:
Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.
摘要:
Circuits and methods for calibrating offset error in a differential amplifier in an efficient and reliable way are described. A final calibrated state for the differential amplifier is obtained in accordance with a nonlinear search that requires significantly fewer test stages to complete than linear search methods. As a result, longer test periods may be used with the invention without adversely affecting the overall length of the calibration process. Because circuit conditions near the calibration point cause internal test signals to switch more slowly from one state to another, lengthening the test period time may allow more time for the internal test signals to reach their final values and, thereby, improve calibration accuracy.
摘要:
Methods for storing a bit sequence are provided. A representative method for storing a bit sequence includes converting a first bit sequence containing a first number of low-resistance bits into a second bit sequence containing a second number of low-resistance bits that is lower than the first number of low-resistance bits, and then storing the second bit sequence in a resistance-based memory device. Systems, computer-readable media, and other methods for storing and retrieving a bit sequence are also provided.
摘要:
A distributed-memory multiprocessor system uses fast and main coherency directories to implement cache coherency. The main directory is stored with user data in main memory and includes sufficient information to determine which memory cells have cached copies of user data stored in main memory. In addition, the main directories specify the states of the cached data. The fast directories cache only some of the main-directory information for only a fraction of the main-memory locations at any given time. The fast directories are tagless in one mode and use partial tags in another mode. The fast-directory information is accessed concurrently with main-directory information in response to data requests. Directory information is retrieved first from the fast directory and is used to launch predictive recalls. Subsequently received main-directory information is used to validate or invalidate the predictive recalls. If invalidated, determined recalls are issued, and memory access times are the same as they would have been without the fast directory. If validated, the predictive recalls reduce data access times. To the extent that the predictive recalls are successful, overall system performance is improved.
摘要:
Examples disclose herein include receiving a master document and a first document update associated with a first time stamp from a first computing device. The first document update includes a first change to the master document. This example also compares the first document update to the master document to identify the first change. Additionally, the example provides transmitting the first change to a second computing device.
摘要:
A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.