Chopper sensor for MRAM
    21.
    发明授权
    Chopper sensor for MRAM 有权
    MRAM的斩波传感器

    公开(公告)号:US06980477B2

    公开(公告)日:2005-12-27

    申请号:US10314111

    申请日:2002-12-07

    申请人: Kenneth K. Smith

    发明人: Kenneth K. Smith

    IPC分类号: G11C11/22 G11C7/00

    CPC分类号: G11C11/22

    摘要: A sensor for a magnetic random-access memory (MRAM) of an embodiment of the invention includes an amplifier having at least two inputs and at least two outputs. The inputs are coupled to a magnetic storage element of the MRAM having a resistance corresponding to a value stored thereby and the outputs provide an output voltage corresponding to the resistance of the magnetic storage element. The sensor comprises a chopper switch coupled between one input of the amplifier and the magnetic storage element, a chopper switch coupled between another input of the amplifier and the magnetic storage element, and a chopper switch coupled between the outputs of the amplifier.

    摘要翻译: 用于本发明实施例的磁性随机存取存储器(MRAM)的传感器包括具有至少两个输入和至少两个输出的放大器。 输入耦合到具有对应于其存储的值的电阻的MRAM的磁存储元件,并且输出提供与磁存储元件的电阻相对应的输出电压。 传感器包括耦合在放大器的一个输入端和磁存储元件之间的斩波开关,耦合在放大器的另一输入端与磁存储元件之间的斩波开关以及耦合在放大器的输出端之间的斩波开关。

    Systems and methods for controlling communication with nonvolatile memory devices
    22.
    发明授权
    Systems and methods for controlling communication with nonvolatile memory devices 有权
    用于控制与非易失性存储器件通信的系统和方法

    公开(公告)号:US06976143B2

    公开(公告)日:2005-12-13

    申请号:US10008101

    申请日:2001-11-13

    IPC分类号: G06F12/06 G06F12/00

    CPC分类号: G06F12/0661

    摘要: Systems and methods for controlling communication with nonvolatile memory devices via a memory bus are provided. Briefly described, one of many possible embodiments is a system comprising a memory controller in communication with a memory bus, the memory controller configured to control communication with at least one nonvolatile memory device by configuring the at least one nonvolatile memory device, via the memory bus, with a unique device identifier.

    摘要翻译: 提供了通过存储器总线来控制与非易失性存储器件的通信的系统和方法。 简要描述,许多可能的实施例之一是包括与存储器总线通信的存储器控​​制器的系统,所述存储器控制器被配置为通过经由存储器总线配置所述至少一个非易失性存储器设备来控制与至少一个非易失性存储器设备的通信 ,具有唯一的设备标识符。

    Memory device
    23.
    发明授权
    Memory device 有权
    内存设备

    公开(公告)号:US06947333B2

    公开(公告)日:2005-09-20

    申请号:US10699023

    申请日:2003-10-30

    申请人: Kenneth K. Smith

    发明人: Kenneth K. Smith

    CPC分类号: G11C11/15

    摘要: A memory device, which includes a matrix of memory cells, and an arrangement of write lines electrically isolated from the memory cells. The write lines may be configured to write data to the memory cells, each write line of the arrangement being electrically coupled to a reverse current limiting device.

    摘要翻译: 一种存储器件,其包括存储器单元的矩阵,以及与存储器单元电隔离的写入线的布置。 写入线可以被配置为向存储器单元写入数据,该布置的每个写入线电耦合到反向限流器件。

    Systems and methods for reducing the effect of noise while reading data from memory
    24.
    发明授权
    Systems and methods for reducing the effect of noise while reading data from memory 有权
    用于在从存储器读取数据的同时降低噪声的影响的系统和方法

    公开(公告)号:US06678197B1

    公开(公告)日:2004-01-13

    申请号:US10273623

    申请日:2002-10-18

    IPC分类号: G11C702

    CPC分类号: G11C7/02 G11C7/06 G11C7/1006

    摘要: Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.

    摘要翻译: 提供了用于在从存储器读取数据的同时降低噪声的影响的系统和方法。 一个系统实施例包括存储第一数据的存储单元; 多个感测装置,其接收第一数据并提供第一组输出; 以及投票系统,其评估所述第一组输出以确定所述第一组的输出中的一个是来自所述存储器单元的有效数据。 一种方法实施例包括并行读取存储在存储单元中以提供输出的数据; 以及评估所述输出以确定所述输出中的一个是来自所述存储器单元的有效数据。

    Nonlinear digital differential amplifier offset calibration
    25.
    发明授权
    Nonlinear digital differential amplifier offset calibration 有权
    非线性数字差分放大器偏移校准

    公开(公告)号:US06586989B2

    公开(公告)日:2003-07-01

    申请号:US10005456

    申请日:2001-11-06

    IPC分类号: H03F102

    CPC分类号: H03F3/45744

    摘要: Circuits and methods for calibrating offset error in a differential amplifier in an efficient and reliable way are described. A final calibrated state for the differential amplifier is obtained in accordance with a nonlinear search that requires significantly fewer test stages to complete than linear search methods. As a result, longer test periods may be used with the invention without adversely affecting the overall length of the calibration process. Because circuit conditions near the calibration point cause internal test signals to switch more slowly from one state to another, lengthening the test period time may allow more time for the internal test signals to reach their final values and, thereby, improve calibration accuracy.

    摘要翻译: 描述了以有效和可靠的方式校准差分放大器中的偏移误差的电路和方法。 根据非线性搜索获得差分放大器的最终校准状态,其需要比线性搜索方法更少的测试阶段来完成。 因此,本发明可以使用更长的测试周期,而不会对校准过程的总长度产生不利影响。 由于校准点附近的电路条件导致内部测试信号从一个状态更慢地切换,因此延长测试周期时间可能会使内部测试信号有更多的时间达到其最终值,从而提高校准精度。

    Storage and retrieval for resistance-based memory devices
    26.
    发明授权
    Storage and retrieval for resistance-based memory devices 有权
    基于电阻的存储器件的存储和检索

    公开(公告)号:US06570782B1

    公开(公告)日:2003-05-27

    申请号:US10050668

    申请日:2002-01-16

    IPC分类号: G11C1700

    CPC分类号: G11C17/00

    摘要: Methods for storing a bit sequence are provided. A representative method for storing a bit sequence includes converting a first bit sequence containing a first number of low-resistance bits into a second bit sequence containing a second number of low-resistance bits that is lower than the first number of low-resistance bits, and then storing the second bit sequence in a resistance-based memory device. Systems, computer-readable media, and other methods for storing and retrieving a bit sequence are also provided.

    摘要翻译: 提供了存储位序列的方法。 用于存储位序列的代表性方法包括将包含第一数量的低电阻位的第一位序列转换为包含低于第一数量的低电阻位的第二数量的低电阻位的第二位序列, 然后将第二比特序列存储在基于电阻的存储装置中。 还提供了用于存储和检索比特序列的系统,计算机可读介质和其他方法。

    Distributed-memory multiprocessor computer system with directory-based cache coherency with ambiguous mappings of cached data to main-memory locations
    27.
    发明授权
    Distributed-memory multiprocessor computer system with directory-based cache coherency with ambiguous mappings of cached data to main-memory locations 有权
    具有基于目录的高速缓存一致性的分布式存储器多处理器计算机系统,将高速缓存数据模糊映射到主存储器位置

    公开(公告)号:US06199147B1

    公开(公告)日:2001-03-06

    申请号:US09528583

    申请日:2000-03-20

    IPC分类号: G06F1200

    摘要: A distributed-memory multiprocessor system uses fast and main coherency directories to implement cache coherency. The main directory is stored with user data in main memory and includes sufficient information to determine which memory cells have cached copies of user data stored in main memory. In addition, the main directories specify the states of the cached data. The fast directories cache only some of the main-directory information for only a fraction of the main-memory locations at any given time. The fast directories are tagless in one mode and use partial tags in another mode. The fast-directory information is accessed concurrently with main-directory information in response to data requests. Directory information is retrieved first from the fast directory and is used to launch predictive recalls. Subsequently received main-directory information is used to validate or invalidate the predictive recalls. If invalidated, determined recalls are issued, and memory access times are the same as they would have been without the fast directory. If validated, the predictive recalls reduce data access times. To the extent that the predictive recalls are successful, overall system performance is improved.

    摘要翻译: 分布式存储器多处理器系统使用快速和主要的一致性目录来实现高速缓存一致性。 主目录与主存储器中的用户数据一起存储,并且包括足够的信息以确定哪些存储器单元具有存储在主存储器中的用户数据的缓存副本。 此外,主目录指定缓存数据的状态。 在任何给定时间,快速目录仅缓存主存储器位置的一部分主目录信息。 快速目录在一种模式下是无标签的,在其他模式下使用部分标签。 响应于数据请求,快速目录信息与主目录信息同时访问。 目录信息首先从快速目录中检索,并用于启动预测性调用。 随后收到的主目录信息用于验证或使预测召回无效。 如果无效,则发出确定的召回,并且内存访问时间与没有快速目录的内存访问时间相同。 如果验证,预测性召回可以减少数据访问时间。 在预测召回成功的情况下,整体系统性能得到改善。

    RECEIVING A DOCUMENT UPDATE TO TRANSMIT A CHANGE
    28.
    发明申请
    RECEIVING A DOCUMENT UPDATE TO TRANSMIT A CHANGE 审中-公开
    接收文件更新以发送更改

    公开(公告)号:US20130110796A1

    公开(公告)日:2013-05-02

    申请号:US13281487

    申请日:2011-10-26

    IPC分类号: G06F17/30

    摘要: Examples disclose herein include receiving a master document and a first document update associated with a first time stamp from a first computing device. The first document update includes a first change to the master document. This example also compares the first document update to the master document to identify the first change. Additionally, the example provides transmitting the first change to a second computing device.

    摘要翻译: 本文公开的示例包括从第一计算设备接收主文档和与第一时间戳相关联的第一文档更新。 第一个文档更新包括对主文档的第一个更改。 此示例还将第一个文档更新与主文档进行比较,以识别第一个更改。 另外,该示例提供将第一改变发送到第二计算设备。

    System and method for reading a memory cell
    30.
    发明授权
    System and method for reading a memory cell 有权
    用于读取存储单元的系统和方法

    公开(公告)号:US07277319B2

    公开(公告)日:2007-10-02

    申请号:US11252143

    申请日:2005-10-17

    IPC分类号: G11C11/00

    CPC分类号: G11C11/14 G11C11/15 G11C11/16

    摘要: A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

    摘要翻译: 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器(MRAM)单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压,向第一存储单元串提供与第一端相对的第二端的接地源,以及确定是否 响应于向第一MRAM单元施加写检测电流,在第一和第二MRAM单元之间的节点处发生电压变化。