公开(公告)号：US20110006326A1

公开(公告)日：2011-01-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui YU ,  Tsung-Hung LU ,  Chang-Hsin CHU

Inventor： Kuo-Hui YU ,  Tsung-Hung LU ,  Chang-Hsin CHU

IPC: H01L33/46 ,  H01L33/48

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20080157097A1

公开(公告)日：2008-07-03

申请号：US11699942

申请日：2007-01-30

Applicant: Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

Inventor： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yeh ,  Chien-Kai Chung

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract translation: 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。

公开(公告)号：US07301272B2

公开(公告)日：2007-11-27

申请号：US11105402

申请日：2005-04-14

Applicant: Chang-Hsin Chu ,  Kuo-Hui Yu Chu ,  Shi-Ming Chen

Inventor： Chang-Hsin Chu ,  Kuo-Hui Yu Chu ,  Shi-Ming Chen

IPC: H01J1/62

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

Abstract: A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.

Abstract translation: 对照明装置及其制造方法进行说明。 首先，依次形成具有第一电特性的半导体层，有源层和第二电性质的半导体层，并且去除其中的一部分以形成台面。 在其上形成透明接触层，从而形成叠层。 之后，钝化层沉积在堆叠上，并且与堆叠相邻的第一电性质的半导体层的第一部分被沉积。 去除钝化层的一部分以暴露部分透明接触层。 然后，在露出的透明接触层上形成第二电性质的电极。 之后，第二电性能的电极延伸到第一电性能的半导体层的第一部分上的钝化层以形成保护环。