公开(公告)号：US08507938B2

公开(公告)日：2013-08-13

申请号：US12753106

申请日：2010-04-02

Applicant: Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Tsung-Hung Lu ,  Chang-Hsin Chu

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.

Abstract translation: 描述了一种发光二极管（LED）结构及其制造方法。 发光二极管结构包括p型电极，接合衬底，p型半导体层，有源层，n型半导体层，外延生长衬底和n型电极。 接合基板设置在p型电极上。 p型半导体层设置在接合基板上。 有源层设置在p型半导体层上。 n型半导体层设置在有源层上。 外延生长衬底设置在n型半导体层上，其中外延生长衬底包括穿透外延生长衬底的开口。 n型电极设置在开口中并与n型半导体层电连接。

公开(公告)号：US20120085988A1

公开(公告)日：2012-04-12

申请号：US13037737

申请日：2011-03-01

Applicant: Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Jing-Hong Li ,  Chang-Hsin Chu

IPC: H01L33/06 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device.

Abstract translation: 发光二极管（LED）装置包括衬底，外延层，第一电极和第二电极。 外延层设置在基板上。 第一电极设置在外延层上，第二电极设置在外延层上，第二电极的第一导电指状物和第一电极的第一导电指状物重叠。 因为第二电极的第一导电指状物和第一电极的第一导电指状物重叠，所以可以增加LED器件的发光面积，并且可以显着降低由电极屏蔽的光。 此外，重叠的电极可以形成可以存储电荷的电容器，以提高LED器件的抗静电能力。

公开(公告)号：US20130292718A1

公开(公告)日：2013-11-07

申请号：US13584512

申请日：2012-08-13

Applicant: Chang Hsin Chu ,  Hsueh Lin Lee ,  Chih Kuei Hsu ,  Yuan Tze Chen

Inventor： Chang Hsin Chu ,  Hsueh Lin Lee ,  Chih Kuei Hsu ,  Yuan Tze Chen

IPC: H01L27/15 ,  H01L33/36

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure comprises an insulating substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence on a surface of the insulating substrate. Each LED chip includes a mesa structure, an exposed portion of the first conductivity type semiconductor layer adjacent to the mesa structure, and a first isolation trench. The first isolation trench is disposed in the mesa structure. The interconnection layers respectively connect neighboring two of the LED chips.

Abstract translation: 发光二极管（LED）结构及其制造方法。 LED结构包括绝缘基板，多个LED芯片和多个互连层。 每个LED芯片包括依次堆叠在绝缘基板的表面上的第一导电类型半导体层，有源层和第二导电类型半导体层。 每个LED芯片包括台面结构，与台面结构相邻的第一导电类型半导体层的暴露部分和第一隔离沟槽。 第一隔离槽设置在台面结构中。 互连层分别连接相邻的两个LED芯片。

公开(公告)号：US08445928B2

公开(公告)日：2013-05-21

申请号：US12567806

申请日：2009-09-28

Applicant: Shi-Ming Cheng ,  Wen-Liang Li ,  Chang-Hsin Chu ,  Hsing-Mao Wang

Inventor： Shi-Ming Cheng ,  Wen-Liang Li ,  Chang-Hsin Chu ,  Hsing-Mao Wang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer.

Abstract translation: 描述了一种发光二极管（LED）光源模块，包括：导热基板，其中所述导热基板的表面包括多个凹部; 分别设置在所述凹部中的多个发光二极管芯片; 绝缘层，其设置在所述凹部的外部的所述导热基板的表面上; 设置在所述绝缘层上的导电层，其中所述发光二极管芯片电连接到所述导电层; 以及覆盖发光二极管芯片，导电层和绝缘层的封装层。

公开(公告)号：US20120305959A1

公开(公告)日：2012-12-06

申请号：US13241667

申请日：2011-09-23

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu ,  Chi-Lung Wu ,  Shin-Jia Chiou ,  Chung-Hsin Lin ,  Jui-Chun Chang

IPC: H01L33/58 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract translation: 发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面 第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体 层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气 电连接到第二电气型半导体层。

公开(公告)号：US20120056152A1

公开(公告)日：2012-03-08

申请号：US12876850

申请日：2010-09-07

Applicant: Meng Hsin Li ,  Kuo Hui Yu ,  Tsung-Hung Lu ,  Ming-Ji Tsai ,  Chang Hsin Chu

Inventor： Meng Hsin Li ,  Kuo Hui Yu ,  Tsung-Hung Lu ,  Ming-Ji Tsai ,  Chang Hsin Chu

IPC: H01L33/04 ,  H01L33/46 ,  H01L33/36

CPC classification number: H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other.

Abstract translation: 在本发明的一个方面，一种发光器件包括：具有形成在衬底上的多层半导体的外延层，具有彼此极性的第一电极和第二电极，并分别电耦合到相应的半导体层 外延层，以及形成在外延层上的棒状结构。 杆结构包括彼此远离的多个杆。

公开(公告)号：US20100207142A1

公开(公告)日：2010-08-19

申请号：US12567806

申请日：2009-09-28

Applicant: Shi-Ming CHEN ,  Wen-Liang LI ,  Chang-Hsin CHU ,  Hsing-Mao WANG

Inventor： Shi-Ming CHEN ,  Wen-Liang LI ,  Chang-Hsin CHU ,  Hsing-Mao WANG

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/005 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/48247 ,  H01L2924/01322 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer.

Abstract translation: 描述了一种发光二极管（LED）光源模块，包括：导热基板，其中所述导热基板的表面包括多个凹部; 分别设置在所述凹部中的多个发光二极管芯片; 绝缘层，其设置在所述凹部的外部的所述导热基板的表面上; 设置在所述绝缘层上的导电层，其中所述发光二极管芯片电连接到所述导电层; 以及覆盖发光二极管芯片，导电层和绝缘层的封装层。

公开(公告)号：US20130049060A1

公开(公告)日：2013-02-28

申请号：US13397929

申请日：2012-02-16

Applicant: Kuo-Hui Yu ,  Chang-Hsin Chu

Inventor： Kuo-Hui Yu ,  Chang-Hsin Chu

IPC: H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer.

Abstract translation: 发光二极管结构。 在一个实施例中，发光二极管结构包括绝缘基板，具有第一电半导体层，发光层和连续层叠在绝缘基板上并包含第一电极的第二电半导体层的发光结构 焊盘区域，第二电极焊盘区域和发光区域，分别设置在第一和第二电极焊盘区域上的第一和第二电极焊盘，设置在发光结构上并连接到发光结构的第二导电指状物 第二电极焊盘和第二电半导体层，以及用于将第二导电指状物与第一电半导体层和发光层绝缘的第一绝缘层。 第二电极焊盘的底表面位于第二电半导体层的上表面的下方。

公开(公告)号：US20120037946A1

公开(公告)日：2012-02-16

申请号：US12855316

申请日：2010-08-12

Applicant: Kuo Hui Yu ,  Chien-Chun Wang ,  Chang Hsin Chu

Inventor： Kuo Hui Yu ,  Chien-Chun Wang ,  Chang Hsin Chu

IPC: H01L33/02 ,  H01L33/36 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact.

Abstract translation: 在本发明的一个方面中，一种发光器件包括衬底和在衬底上形成于发光区域和非发射区域中的n型半导体层的多层结构，形成在发光区域中的有源层 n型半导体层上的发光区域中形成的p型半导体层。 发光器件还包括形成在发光区域中并电耦合到p型半导体层的p电极和形成在非发射区域中并电耦合到n型半导体层的n电极。 此外，发光器件还包括形成在非发射区域的第一部分中的n电极和n型半导体层之间的绝缘体，以限定至少一个欧姆接触，使得第一部分中的n电极 的非发射区域通过至少一个欧姆接触电耦合到n型半导体层。

公开(公告)号：US20110073894A1

公开(公告)日：2011-03-31

申请号：US12955369

申请日：2010-11-29

Applicant: Chang Hsin Chu ,  Chi Meng Lu ,  Yu Ju Chang ,  Kuo Hui Yu

Inventor： Chang Hsin Chu ,  Chi Meng Lu ,  Yu Ju Chang ,  Kuo Hui Yu

IPC: H01L33/10 ,  H01L33/58 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/42 ,  H01L33/44

Abstract: In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.

Abstract translation: 在本发明的一个方面中，LED包括基板，n型半导体层，发光层，p型半导体层和顺序堆叠在基板上的透明导电层，p型和n型 电极。 p型半导体层具有粗糙的表面区域和至少一个平坦表面区域。 透明导电层具有分别对应于p型半导体层的粗糙表面区域和至少一个平坦表面区域的粗糙表面区域和平坦表面区域。 p型电极设置在透明导电层的平坦表面区域上。 n型电极电耦合到n型半导体层。