公开(公告)号：US20050174838A1

公开(公告)日：2005-08-11

申请号：US11051471

申请日：2005-02-07

申请人： Manfred Ruehrig ,  Joachim Wecker

发明人： Manfred Ruehrig ,  Joachim Wecker

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/16 ,  G11C11/34 ,  G11C13/06 ,  H01L27/22

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/15 ,  H01L43/08

摘要： An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

摘要翻译： MRAM存储单元具有圆盘形层的层系统。 存储单元包括由非磁性中间层隔开的两个磁性层。 第一磁性层或参考层表现出硬磁性能。 第二磁性层或存储层表现出软磁性能。 通过存储层的磁化状态存储信息。 存储层具有限定磁性优选方向的弱本征各向异性。 参考层的磁化方向平行于存储层内部的剩余磁化的磁化方向。 作为施加具有垂直于存储层的固有各向异性的优选方向的场分量的外部磁场的结果，发生剩余磁化。