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21 条记录 (耗时 0.012 秒)

    Adiabatic rotational switching memory element including a ferromagnetic decoupling layer
    2.
    发明授权
    Adiabatic rotational switching memory element including a ferromagnetic decoupling layer 失效
    绝热旋转开关存储元件，包括铁磁去耦层

    公开(公告)号：US07205596B2

    公开(公告)日：2007-04-17

    申请号：US11117713

    申请日：2005-04-29

    申请人： Ulrich Klostermann ,  Peter Beer ,  Manfred Ruehrig

    发明人： Ulrich Klostermann ,  Peter Beer ,  Manfred Ruehrig

    IPC分类号： H01L29/76

    CPC分类号： H01L43/08 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295

    摘要： A magnetoresistive memory element includes a stacked structure with a ferromagnetic reference region including a fixed magnetization; a ferromagnetic free region including a free magnetization that is free to be switched between oppositely aligned directions with respect to an easy axis thereof; and a tunneling barrier made of a non-magnetic material. The ferromagnetic reference and free regions and the tunneling barrier together form a magnetoresistive tunneling junction. The ferromagnetic free region includes a plurality of N ferromagnetic free layers being magnetically coupled such that magnetizations of adjacent ferromagnetic free layers are in antiparallel alignment, where N is an integer greater than or equal to two. The ferromagnetic free region further includes at least one ferromagnetic decoupling layer including frustrated magnetization in orthogonal alignment to ferromagnetic free layer magnetizations and being arranged in between adjacent ferromagnetic free layers.

    摘要翻译： 磁阻存储元件包括具有包括固定磁化强度的铁磁参考区的堆叠结构; 铁磁自由区域，包括相对于其容易轴线在相对排列的方向之间自由切换的自由磁化; 以及由非磁性材料制成的隧道屏障。 铁磁参考和自由区和隧道势垒一起形成磁阻隧道结。 铁磁自由区包括磁耦合的多个N个铁磁自由层，使得相邻铁磁自由层的磁化反平行对准，其中N是大于或等于2的整数。 铁磁自由区还包括至少一个铁磁解耦层，其包括与铁磁自由层磁化正交对准的失效磁化，并布置在相邻的铁磁自由层之间。

    Integrated circuits, cell, cell arrangement, method of reading a cell, memory module
    3.
    发明授权
    Integrated circuits, cell, cell arrangement, method of reading a cell, memory module 失效
    集成电路，单元，单元布置，读取单元的方法，存储器模块

    公开(公告)号：US07755936B2

    公开(公告)日：2010-07-13

    申请号：US12020902

    申请日：2008-01-28

    申请人： Joachim Wecker ,  Manfred Ruehrig

    发明人： Joachim Wecker ,  Manfred Ruehrig

    IPC分类号： G11C7/00

    CPC分类号： G11C11/16 ,  G11C5/02 ,  G11C11/1675

    摘要： An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

    摘要翻译： 本发明的实施例提供了一种具有单元的集成电路。 电池包括具有沿着第一轴的第一磁化的第一磁性层结构，以及设置在第一磁性层结构之上的非磁性间隔层结构，以及设置在非磁性间隔层结构之上的第二磁性层结构。 第二磁性层结构沿着第二轴线具有相对于第一轴线成一定角度的第二磁化，使得通过改变第二磁化的方向，可以确定沿第一轴线的第一磁化方向。

    Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Cell, Memory Module
    4.
    发明申请
    Integrated Circuits, Cell, Cell Arrangement, Method of Reading a Cell, Memory Module 失效
    集成电路，单元，单元布置，读取单元的方法，存储器模块

    公开(公告)号：US20090190390A1

    公开(公告)日：2009-07-30

    申请号：US12020902

    申请日：2008-01-28

    申请人： Joachim Wecker ,  Manfred Ruehrig

    发明人： Joachim Wecker ,  Manfred Ruehrig

    IPC分类号： G11C11/02

    CPC分类号： G11C11/16 ,  G11C5/02 ,  G11C11/1675

    摘要： An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

    摘要翻译： 本发明的实施例提供了一种具有单元的集成电路。 电池包括具有沿着第一轴的第一磁化的第一磁性层结构，以及设置在第一磁性层结构之上的非磁性间隔层结构，以及设置在非磁性间隔层结构之上的第二磁性层结构。 第二磁性层结构沿着第二轴线具有相对于第一轴线成一定角度的第二磁化，使得通过改变第二磁化的方向，可以确定沿第一轴线的第一磁化方向。

    Magnetostrictive multilayer sensor and method for producing a sensor
    6.
    发明授权
    Magnetostrictive multilayer sensor and method for producing a sensor 有权
    磁致伸缩多层传感器及其制造方法

    公开(公告)号：US07490522B2

    公开(公告)日：2009-02-17

    申请号：US11620304

    申请日：2007-01-05

    申请人： Manfred Ruehrig ,  Stephan Schmitt ,  Juergen Zimmer

    发明人： Manfred Ruehrig ,  Stephan Schmitt ,  Juergen Zimmer

    IPC分类号： G01L3/02

    CPC分类号： G01L9/16 ,  G01L1/12

    摘要： A sensor has a substrate in which a mechanically deformable area is formed. A first magnetostrictive multilayer sensor element and a second magnetostrictive multilayer sensor element are formed in the mechanically deformable area, wherein the first magnetostrictive multilayer sensor element and the second magnetostrictive multilayer sensor element are connected to each other and implemented such that when generating a mechanical deformation of the mechanically deformable area, the electric resistance of the first magnetostrictive multilayer sensor element changes in an opposite way to the electric resistance of the second magnetostrictive multilayer sensor element, or the electric resistance of the first magnetostrictive multilayer sensor element remains unchanged.

    摘要翻译： 传感器具有其中形成机械可变形区域的基板。 第一磁致伸缩多层传感器元件和第二磁致伸缩多层传感器元件形成在机械可变形区域中，其中第一磁致伸缩多层传感器元件和第二磁致伸缩多层传感器元件彼此连接并且被实现为使得当产生机械变形 机械变形区域，第一磁致伸缩层叠式传感器元件的电阻以与第二磁致伸缩层叠式传感器元件的电阻相反的方式变化，或第一磁致伸缩层叠式传感器元件的电阻保持不变。

    MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
    7.
    发明授权
    MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same 有权
    具有弱本征各向异性存储层的MRAM存储单元及其制造方法

    公开(公告)号：US07280393B2

    公开(公告)日：2007-10-09

    申请号：US11634988

    申请日：2006-12-07

    申请人： Manfred Ruehrig ,  Joachim Wecker

    发明人： Manfred Ruehrig ,  Joachim Wecker

    IPC分类号： G11C11/34

    CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/15 ,  H01L43/08

    摘要： An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

    摘要翻译： MRAM存储单元具有圆盘形层的层系统。 存储单元包括由非磁性中间层隔开的两个磁性层。 第一磁性层或参考层表现出硬磁性能。 第二磁性层或存储层表现出软磁性能。 通过存储层的磁化状态存储信息。 存储层具有限定磁性优选方向的弱本征各向异性。 参考层的磁化方向平行于存储层内部的剩余磁化的磁化方向。 作为施加具有垂直于存储层的固有各向异性的优选方向的场分量的外部磁场的结果，发生剩余磁化。

    Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
    10.
    发明授权
    Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force 有权
    具有磁致伸缩磁阻传感器的力传感器阵列和用于确定力的方法

    公开(公告)号：US07535217B2

    公开(公告)日：2009-05-19

    申请号：US11369274

    申请日：2006-03-07

    申请人： Eckard Quandt ,  Manfred Ruehrig ,  Stephan Schmitt ,  Bernhard Winkler ,  Joachim Wecker ,  Juergen Zimmer

    发明人： Eckard Quandt ,  Manfred Ruehrig ,  Stephan Schmitt ,  Bernhard Winkler ,  Joachim Wecker ,  Juergen Zimmer

    IPC分类号： G01B7/16 ,  G01L5/00 ,  G01L7/08

    CPC分类号： G01L9/16 ,  G01L1/125 ,  Y10T428/1121 ,  Y10T428/24942

    摘要： The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.

    摘要翻译： 本发明涉及一种力传感器，其具有用于确定沿着预定义的力轴作用在层序列上的力的层序列。 层序列包括在垂直方向上连续布置具有第一磁化方向的第一磁性层，具有第二磁化方向的分离层和第二磁性层。 这里，第一磁化方向相对于层序确保。 第二磁性层具有不同于零的磁致伸缩常数和具有各向异性轴的单轴磁各向异性。 使用形状各向异性产生单轴磁各向异性。 第二磁化方向围绕静止状态下的力轴大于0°且小于90°的角度，并且各向异性轴通过力轴包围大于0°且小于90°的角度。