公开(公告)号：US07349245B2

公开(公告)日：2008-03-25

申请号：US11486100

申请日：2006-07-14

Applicant: Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

Inventor： Hye-jin Kim ,  Kwang-jin Lee ,  Sang-Beom Kang ,  Mu-hui Park

IPC: G11C11/00 ,  G11C11/14

CPC classification number: G11C8/12 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0078

Abstract: A method of performing a program-suspend-read operation in a PRAM device comprises programming a write block comprising N unit program blocks in response to a program operation request, and suspending the program operation after programming M unit program blocks, where M is less than N, in response to a read operation request. The method further comprises executing the requested read operation, and then resuming the programming of the write data block and programming (N−M) remaining unit program blocks.

Abstract translation: 一种在PRAM设备中执行程序挂起读取操作的方法包括响应于程序操作请求编程包含N个单元程序块的写入块，并且在对M个单元程序块进行编程之后暂停编程操作，其中M小于 N，响应于读取操作请求。 该方法还包括执行所请求的读取操作，然后恢复写入数据块和编程（N-M）剩余单元程序块的编程。

公开(公告)号：US20070091665A1

公开(公告)日：2007-04-26

申请号：US11580087

申请日：2006-10-13

Applicant: Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

Inventor： Hyung-rok Oh ,  Mu-hui Park ,  Du-eung Kim

IPC: G11C11/00

CPC classification number: G11C13/0004 ,  G11C11/5678 ,  G11C13/004

Abstract: A phase change random access memory is provided which includes a memory array including a plurality of phase change memory cells, and wordlines respectively connected to the phase change memory cells, where, in a read operation, a voltage of a wordline connected to a selected phase change memory cell is transitioned between at least two voltage stages having different voltage levels.

Abstract translation: 提供了一种相变随机存取存储器，其包括包括多个相变存储器单元的存储器阵列和分别连接到相变存储单元的字线，其中在读操作中连接到所选相位的字线的电压 改变存储单元在具有不同电压电平的至少两个电压级之间转变。

公开(公告)号：US20060291277A1

公开(公告)日：2006-12-28

申请号：US11315347

申请日：2005-12-23

Applicant: Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

Inventor： Beak-hyung Cho ,  Kwang-jin Lee ,  Mu-hui Park

IPC: G11C11/00

CPC classification number: G11C11/5678 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0028 ,  G11C2213/72

Abstract: A phase change memory device has a word line driver layout which allows for a reduction in the size a core area of the device. In one aspect, phase change memory device includes a plurality of memory cell blocks sharing a word line, and a plurality of word line drivers driving the word line. Each of the word line drivers includes a precharge device for precharging the word line and a discharge device for discharging the word line, and where the precharge device and the discharge device are alternately located between the plurality of memory cell blocks.