公开(公告)号：US20110090719A1

公开(公告)日：2011-04-21

申请号：US12603326

申请日：2009-10-21

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H02M5/40 ,  H02M7/00

CPC classification number: H02M3/335 ,  H02M7/44

Abstract: System and method for providing isolated power to a component that is also subject a set of RF signals that includes at least a first RF signal having a first RF frequency is provided. There is included providing a DC voltage signal and modulating the DC voltage signal into an isolated power signal using an isolation transformer. The isolated power signal has an intermediate frequency that is higher than 60 Hz and lower than the first RF frequency. There is included supplying the DC voltage signal to the primary winding and obtaining the isolated power signal from the secondary winding; and delivering the isolated power to the component using the isolated power signal.

Abstract translation: 提供了用于向组件提供隔离功率的系统和方法，所述组件还经受包括至少具有第一RF频率的第一RF信号的一组RF信号。 包括提供直流电压信号，并使用隔离变压器将直流电压信号调制成隔离电源信号。 隔离电源信号具有高于60Hz并低于第一RF频率的中频。 包括向初级绕组提供直流电压信号，并从次级绕组获得隔离的功率信号; 并使用隔离电源信号将隔离电源提供给组件。

公开(公告)号：US06974550B2

公开(公告)日：2005-12-13

申请号：US10452471

申请日：2003-05-30

Applicant: Neil Benjamin ,  Andras Kuthi

Inventor： Neil Benjamin ,  Andras Kuthi

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  G01L21/30 ,  C03C15/00 ,  H01L21/66 ,  H05H1/24

CPC classification number: H01J37/321 ,  H01J37/32697 ,  H01J37/32935 ,  H01J37/3299

Abstract: An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network. The shield is powered via a variable impedance network. The second sensor sends a second signal representative of the voltage of the shield to the second controller. The second controller adjusts the variable impedance network such that the voltage of the shield is controlled by a second set point.

Abstract translation: 用于控制施加到由经由匹配网络供电的感应线圈之间的屏蔽的电压及其产生的等离子体的装置包括屏蔽，第一反馈电路和第二反馈电路。 电源为屏蔽提供电源。 第一反馈电路连接到用于控制电源的感应线圈。 第二反馈电路连接到屏蔽以控制屏蔽电压。 第一和第二反馈电路都以不同的频率范围工作。 第一反馈电路还包括第一控制器和第一传感器。 第一传感器将表示提供给感应线圈的功率的第一信号发送到第一控制器。 第一控制器调节电源，使得提供给电感线圈的功率由第一设定点控制。 第二反馈电路还包括第二传感器，第二控制器和可变阻抗网络。 屏蔽通过可变阻抗网络供电。 第二传感器将表示屏蔽电压的第二信号发送到第二控制器。 第二控制器调整可变阻抗网络，使得屏蔽的电压由第二设定点控制。

公开(公告)号：US06972579B2

公开(公告)日：2005-12-06

申请号：US10899590

申请日：2004-07-26

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H01L23/544 ,  G01R31/02

CPC classification number: H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A wafer integrated plasma diagnostic apparatus for semiconductor wafer processing system having a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is in the center and eight more plasma probe assemblies are at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. At each location and in each of the plasma probe assemblies, there are six possible probe elements having a relative geometrical area such that they are capable of making simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

Abstract translation: 一种用于半导体晶片处理系统的晶片集成等离子体诊断装置，具有以平面阵列方式布置在晶片上的多个等离子体探针组件，使得一个等离子体探针组件位于中心，并且另外8个等离子体探针组件位于中间位置，使得它们 沿着半径从中心到角落; 这些拐角在晶片边缘附近形成方形盒的四个角。 在每个位置和每个等离子体探针组件中，有六个可能的探针元件具有相对几何区域，使得它们能够同时测量晶片表面上的不同等离子体特性的空间分辨率和实时测量，例如 作为：DC电位，AC电位，阴影诱导电位，离子通量，离子能量分布以及IV Langmuir探针特征的电子部分。

公开(公告)号：US06952255B2

公开(公告)日：2005-10-04

申请号：US10636086

申请日：2003-08-06

Applicant: Andrew Perry ,  Robert Steger ,  Neil Benjamin

Inventor： Andrew Perry ,  Robert Steger ,  Neil Benjamin

IPC: G01C1/00 ,  H01L21/68 ,  G01B11/26

CPC classification number: G01C1/00 ,  H01J2237/30438 ,  H01L21/681

Abstract: An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector is included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.

公开(公告)号：US20050211385A1

公开(公告)日：2005-09-29

申请号：US11004179

申请日：2004-12-02

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683 ,  C23F1/00

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。

公开(公告)号：US20050121143A1

公开(公告)日：2005-06-09

申请号：US10966750

申请日：2004-10-15

Applicant: John Daugherty ,  Neil Benjamin ,  Song Huang

Inventor： John Daugherty ,  Neil Benjamin ,  Song Huang

IPC: H01J37/32 ,  H01L21/306 ,  C23F1/00

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A cylindrical pump baffle fitted to a semiconductor processing chamber is disclosed. The pump baffle contains a screen with bores therethrough to allow process gasses from the process chamber to be exhausted from the chamber at a reduced rate. This decreases process discrepancies to the wafer due to the prejudice of gas concentration as a result of the pressure differential imposed upon the gas and thereby the wafer brought about by the rapid and relatively unimpeded exit flow of process gasses when no restrictive member is in place. The pump baffle is also machined such that it does not block the placement and removal of wafers by the platform robot arm.

Abstract translation: 公开了一种装配到半导体处理室的圆柱形泵挡板。 泵挡板包含具有穿过其中的孔的筛网，以允许来自处理室的处理气体以降低的速率从室中排出。 由于在没有限制性元件就位时由于施加在气体上的压力差导致气体浓度的偏差，从而晶片由于过程气体的快速且相对不受阻碍的流出而带来，从而减少了晶片的工艺差异。 泵挡板也被加工成使得它不会阻挡平台机器人臂的放置和移除晶片。

公开(公告)号：US06653852B1

公开(公告)日：2003-11-25

申请号：US09540418

申请日：2000-03-31

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: G01R3102

CPC classification number: H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A wafer integrated plasma diagnostic apparatus for semiconductor wafer processing system having a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is in the center and eight more plasma probe assemblies are at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. At each location and in each of the plasma probe assemblies, there are six possible probe elements having a relative geometrical area such that they are capable of making simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

Abstract translation: 一种用于半导体晶片处理系统的晶片集成等离子体诊断装置，具有以平面阵列方式布置在晶片上的多个等离子体探针组件，使得一个等离子体探针组件位于中心，并且另外8个等离子体探针组件位于中间位置，使得它们 沿着半径从中心到角落; 这些拐角在晶片边缘附近形成方形盒的四个角。 在每个位置和每个等离子体探针组件中，有六个可能的探针元件具有相对几何区域，使得它们能够同时测量晶片表面上的不同等离子体特性的空间分辨率和实时测量，例如 作为：DC电位，AC电位，阴影诱导电位，离子通量，离子能量分布以及IV Langmuir探针特征的电子部分。

公开(公告)号：US06563076B1

公开(公告)日：2003-05-13

申请号：US09557745

申请日：2000-04-25

Applicant: Neil Benjamin ,  Scott Baldwin ,  Seyed Jafar Jafarian-Tehrani

Inventor： Neil Benjamin ,  Scott Baldwin ,  Seyed Jafar Jafarian-Tehrani

IPC: B23K1000

CPC classification number: H01J37/32192 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed. This DC bias forms at the surface of the workpiece upon generation of a plasma in the plasma chamber and is affected by the RF signal applied to the chuck electrode. Since power losses within the match network are variable and unpredictable, the peak voltage at the electrode can not be consistently maintained by simply applying a predetermined generator output. By monitoring the peak voltage at the electrode and generating a corresponding control signal to control the generator, a consistent DC bias and corresponding process rate can be maintained.

公开(公告)号：US06509542B1

公开(公告)日：2003-01-21

申请号：US09557684

申请日：2000-04-25

Applicant: Neil Benjamin ,  Scott Baldwin ,  Seyed Jafar Jafarian-Tehrani

Inventor： Neil Benjamin ,  Scott Baldwin ,  Seyed Jafar Jafarian-Tehrani

IPC: B23K1000

CPC classification number: H01J37/32192 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed. This DC bias forms at the surface of the workpiece upon generation of a plasma in the plasma chamber and is affected by the RF signal applied to the chuck electrode. Since power losses within the match network are variable and unpredictable, the peak voltage at the electrode can not be consistently maintained by simply applying a predetermined generator output. By monitoring the peak voltage at the electrode and generating a corresponding control signal to control the generator, a consistent DC bias and corresponding process rate can be maintained.

Abstract translation: 具有用于制造半导体晶片等的受控直流偏压的等离子体反应器系统。 反应器系统包括等离子体室，等离子体产生线圈和包括卡盘电极的卡盘。 卡盘支撑腔室内的工件。 等离子体反应器系统还包括一对发生器，其中之一向等离子体发生线圈提供射频信号。 第二个发生器将一个RF信号传送到卡盘电极并用于控制工件的直流偏压。 峰值电压传感器电路和设定点信号电路控制发电机的功率输出，并且耦合在发电机和第一电极之间的匹配网络将RF信号的阻抗与由等离子体施加的负载匹配。 直流偏压确定等离子体颗粒冲击工件表面的能量，从而确定进行过程的速率。 在等离子体室中产生等离子体时，在工件的表面形成该直流偏压，并受到施加到卡盘电极的RF信号的影响。 由于匹配网络内的功率损耗是可变的和不可预测的，所以通过简单地施加预定的发电机输出，不能一致地维持电极处的峰值电压。 通过监测电极处的峰值电压并产生相应的控制信号来控制发电机，可以保持一致的直流偏压和相应的工艺速率。

公开(公告)号：US5948704A

公开(公告)日：1999-09-07

申请号：US658262

申请日：1996-06-05

Applicant: Neil Benjamin ,  Jon Hylbert ,  Stefano Mangano

Inventor： Neil Benjamin ,  Jon Hylbert ,  Stefano Mangano

IPC: H01L21/302 ,  H01J37/20 ,  H01L21/00 ,  H01L21/285 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/306 ,  H05H1/00

CPC classification number: H01L21/67748 ,  H01J37/20 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32752 ,  Y10T279/23

Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

Abstract translation: 真空处理室，其具有可移除地安装在其中的基板支撑件。 腔室包括在其侧壁中的开口，并且开口足够大以允许衬底支撑件通过开口从腔室移除。 模块化安装布置延伸穿过开口并且可移动地将腔室内部的基板支撑件支撑在位于腔室内侧壁的内侧的位置。 安装装置包括安装凸缘和支撑臂。 安装凸缘连接到室的外表面，并且支撑臂在基板支撑件和安装凸缘之间延伸。 腔室包括在与衬底支撑件间隔开的腔室的端壁的中心部分中的单个真空端口。 真空端口连接到真空泵，真空泵从腔室内部除去气体，并将室保持在低于大气压的压力下。 衬底支撑件易于维修或更换，因为它可以通过腔室的侧壁去除。 侧壁安装的基板支撑件还允许大的真空端口位于室的端壁中，从而允许通过将真空端口连接到大容量真空泵来实现高流量。 该室还包括模块化衬垫，模块式等离子体发生源和模块化真空泵送装置，其中每一个都可以用可更换的设备来代替。