Abstract:
A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.
Abstract:
An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.
Abstract:
A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
Abstract:
A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
Abstract:
A capacitive manometer includes a flow passage through which gas can enter the manometer, a deflectable diaphragm, and a filter arranged in the flow passage. The filter is capable of removing condensable vapors from the gas so that the condensable vapors do not reach and deposit on the diaphragm. The capacitive manometer can include a cooling unit arranged to cool the filter so as to enhance removal of condensable vapors from the gas by the filter. The capacitive manometer can include a baffle having gas passages distributed to control distribution of condensable vapors, which pass through the baffle, on the diaphragm.
Abstract:
An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector is included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.
Abstract:
System and method for providing isolated power to a component that is also subject a set of RF signals that includes at least a first RF signal having a first RF frequency is provided. There is included providing a DC voltage signal and modulating the DC voltage signal into an isolated power signal using an isolation transformer. The isolated power signal has an intermediate frequency that is higher than 60 Hz and lower than the first RF frequency. There is included supplying the DC voltage signal to the primary winding and obtaining the isolated power signal from the secondary winding; and delivering the isolated power to the component using the isolated power signal.
Abstract:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
Abstract:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
Abstract:
A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.