公开(公告)号：US20050000445A1

公开(公告)日：2005-01-06

申请号：US10836268

申请日：2004-05-03

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32192

摘要： A plasma processing device includes a susceptor, processing vessel, dielectric plate, antenna, and projection. The susceptor has a stage surface on which a target object is to be arranged. The processing vessel accommodates the susceptor and has an opening in a side which opposes the stage surface of the susceptor. The dielectric plate closes the opening of the processing vessel. The antenna supplies a high-frequency electromagnetic field into the processing vessel through the dielectric plate. The projection projects from a surface of the antenna which opposes the dielectric plate toward the dielectric plate. The projection is conductive at least at its surface. A plasma processing method is also disclosed.

摘要翻译： 等离子体处理装置包括基座，处理容器，电介质板，天线和投影。 感受器具有在其上布置目标物体的台面。 处理容器容纳基座，并且在与基座的台表面相对的一侧具有开口。 电介质板封闭处理容器的开口。 天线通过电介质板向处理容器提供高频电磁场。 突起从天线的与电介质板朝向电介质板的表面突出。 该突起至少在其表面是导电的。 还公开了等离子体处理方法。

公开(公告)号：US06796268B2

公开(公告)日：2004-09-28

申请号：US09776675

申请日：2001-02-06

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： C23C1600

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： On the top wall of a processing vessel 1 of a plasma processing system, a transmission window 10 capable of transmitting microwaves is provided. On the top of the transmission window 10, a microwave antenna 2 is mounted. Microwaves are supplied from a microwave supply source 3 to the antenna 2 through a connecting waveguide 4. The antenna 2 has two ring-shaped antenna waveguides 5a and 5b which are substantially concentrically arranged. Each of the antenna waveguides 5a and 5b comprises a rectangular waveguide having a bottom wall in which a plurality of slots 6a and 6b are formed at intervals, and the proximal end portion of each of the antenna waveguides 5a and 5b is connected to the connecting waveguide 4. The proximal end portions 7a and 7b of the antenna waveguides 5a and 5b are provided with control gates 9a and 9b for varying the size of apertures, respectively.

摘要翻译： 在等离子体处理系统的处理容器1的顶壁上设置能够传送微波的透射窗10。 在传输窗口10的顶部安装微波天线2。 微波通过连接波导4从微波供应源3提供给天线2.天线2具有基本上同心布置的两个环形天线波导5a和5b。 天线波导5a和5b中的每一个包括一个矩形波导，该矩形波导具有一个其中多个槽6a和6b间隔地形成的底壁，并且每个天线波导5a和5b的基端部分连接到连接波导 天线波导5a和5b的近端部分7a和7b分别设置有用于改变孔径尺寸的控制门9a和9b。

公开(公告)号：US06670741B2

公开(公告)日：2003-12-30

申请号：US09796591

申请日：2001-03-02

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： H01J1726

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 for supporting a semiconductor wafer W arranged in the processing container 53, an endless-and-annular antenna 73 attached to a sealing plate 55 opposing the wafer W to introduce a microwave into the container 53 through the plate 55, a propagation waveguide 81 connected to the annular antenna 73 to supply the microwave to the antenna 73, and a microwave supplier 83 connected to the propagation waveguide 81 to supply the microwave to the waveguide 81. In arrangement, the annular antenna 73 is arranged so that its part along the sealing plate 55 accords with an antinode of a standing wave of the microwave, producing an uniform plasma in the processing container 53.

摘要翻译： 等离子体处理装置包括处理容器53，用于支撑布置在处理容器53中的半导体晶片W的安装台61，安装在与晶片W相对的密封板55上的环形和环形天线73，以将微波引入 通过板55的容器53，连接到环形天线73以将微波提供给天线73的传播波导81和连接到传播波导81以将微波提供给波导81的微波供应器83.在布置中， 环形天线73被布置成使得其沿着密封板55的部分与微波驻波的波腹一致，在处理容器53中产生均匀的等离子体。

公开(公告)号：US06433298B1

公开(公告)日：2002-08-13

申请号：US09665068

申请日：2000-09-19

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： B23K1000

CPC分类号： H01L21/67017 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus has a vacuum vessel 2, an annular, transparent plate 23 put on the upper open end of the vacuum vessel 2 and a shower head 50 fitted in an opening formed in a central part of the annular transparent plate 23. A waveguide 25 has an outer guide member 25b and an inner guide member 25a connected to the shower head 50. Film forming gases including a CF gas is supplied through the inner guide member 25a and the shower head 50 into the vacuum vessel 2. A plasma producing gas, such as Ar gas, is supplied through an opening formed in the side wall at a position above the ECR point into the vacuum vessel 2. Active species of the film forming gases are distributed uniformly over the surface of a wafer. The interior of the shower head 50 formed of a metal is not contaminated with particles because the plasma does not flow into the shower head 50.

摘要翻译： 等离子体处理装置具有真空容器2，放置在真空容器2的上部开口端的环状的透明板23和安装在形成于环状透明板23的中心部的开口部的喷淋头50.波导管 25具有外部引导构件25b和连接到淋浴头50的内部引导构件25.包括CF气体的成膜气体通过内部引导构件25a和淋浴头50供给到真空容器2中。等离子体产生气体 ，例如Ar气体，通过形成在侧壁上的开口，在ECR点上方的位置供给到真空容器2中。成膜气体的活性种类均匀分布在晶片的表面上。 由于等离子体不流入淋浴喷头50，所以由金属形成的喷淋头50的内部不会被颗粒污染。

公开(公告)号：US06390018B1

公开(公告)日：2002-05-21

申请号：US08865070

申请日：1997-05-29

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： C23C16511

CPC分类号： H01J37/32284 ,  H01J37/32192

摘要： A microwave plasma treatment apparatus according to the present invention comprises a microwave generating section for generating TE11-mode microwaves, a circular waveguide for propagating the TE11-mode microwaves generated from the microwave generating section, a plasma generating section for generating a plasma by using the TE11-mode microwaves propagated through the circular waveguide, and a treatment chamber for treating an object of treatment with the plasma generated by the plasma generating section. Those inner surface regions of the circular waveguide which are opposed to each other in the electric-field direction of the microwaves are deformed so that the electric-field intensity of the TE11-mode microwaves is substantially uniform in the magnetic-field direction of the microwaves.

摘要翻译： 根据本发明的微波等离子体处理装置包括用于产生TE11模式微波的微波产生部分，用于传播从微波产生部分产生的TE11模式微波的圆形波导，用于通过使用 TE11型微波传播通过圆形波导，以及处理室，用于处理由等离子体产生部产生的等离子体的处理对象。 在微波的电场方向上彼此相对的圆形波导的这些内表面区域变形，使得TE11模式微波的电场强度在微波的磁场方向上基本均匀 。

公开(公告)号：US06311638B1

公开(公告)日：2001-11-06

申请号：US09500520

申请日：2000-02-09

申请人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Makoto Ando ,  Naohisa Goto

发明人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Makoto Ando ,  Naohisa Goto

IPC分类号： C23C1600

CPC分类号： H01J37/32266 ,  C23C16/511 ,  H01J37/32174 ,  H01J37/3299

摘要： A plasma processing apparatus has a vacuum vessel, a high-frequency power generator that generates a high-frequency wave, a waveguide for propagating the high-frequency wave generated by the high-frequency power generator into the vacuum vessel to produce a plasma by ionizing a processing gas supplied into the vacuum vessel and to process a semiconductor wafer supported on a support table in the vacuum vessel. A reflection coefficient measuring unit 5 is combined with a waveguide 35 to take data on a ratio &Ggr;0 of advancing wave from the high-frequency power generator 4 and reflected wave from the plasma and phase &thgr; of reflection coefficient. Factors dominating the electron density of the plasma including the output power of the microwave power generator are controlled on the basis of the measured data, whereby the electron density is controlled and stable processing is ensured.

摘要翻译： 等离子体处理装置具有真空容器，产生高频波的高频发电机，将由高频发电机产生的高频波传播到真空容器中的波导，通过电离产生等离子体 供应到真空容器中并处理支撑在真空容器中的支撑台上的半导体晶片的处理气体。 反射系数测量单元5与波导35组合以获取来自高频发生器4的前进波的比率＆Ggr; 0的数据和来自反射系数的等离子体和相位θ的反射波的数据。 基于测量数据控制包括微波功率发生器的输出功率的等离子体的电子密度的因素，由此控制电子密度并确保稳定的处理。

公开(公告)号：US6136139A

公开(公告)日：2000-10-24

申请号：US252004

申请日：1999-02-18

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H01J37/32 ,  H05H1/18 ,  H05H1/46 ,  H05H1/00

CPC分类号： H05H1/46 ,  H01J37/321

摘要： Disclosed is a plasma processing apparatus, comprising a processing chamber in which an object to be processed is arranged, a processing gas introducing pipe for introducing a processing gas into the processing chamber, an antenna arranged in that region on the outer surface of the processing chamber which is positioned to correspond to the object to be processed, an insulator being interposed between the antenna and the processing chamber, and a high frequency power being supplied to the antenna so as to form an induction electric field near the object to be processed, and a paramagnetic member arranged to overlap at least partially with the antenna.

公开(公告)号：US5683537A

公开(公告)日：1997-11-04

申请号：US317752

申请日：1994-10-04

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： H01J37/32 ,  H05H1/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/321

摘要： A plasma processing apparatus includes an air-tight chamber consisting of a conductive material, which is grounded, a susceptor provided in the air-tight chamber, for supporting a wafer to be processed, and an RF antenna constituted by a flat coil which is provided in the air-tight chamber to oppose, at a predetermined gap, the wafer which is mounted on the susceptor. A process gas is supplied into the chamber, and an RF power is applied to the RF antenna to generate a plasma between the antenna and the wafer, thereby processing the wafer with the plasma.

摘要翻译： 等离子体处理装置包括由导电材料接地的气密室，设置在气密室中的基座，用于支撑待处理的晶片，以及由扁平线圈构成的RF天线 在气密室中以预定间隙对置安装在基座上的晶片。 将工艺气体供应到室中，并且RF功率被施加到RF天线以在天线和晶片之间产生等离子体，从而用等离子体处理晶片。

公开(公告)号：US20110211988A1

公开(公告)日：2011-09-01

申请号：US13102209

申请日：2011-05-06

申请人： Koichi HASEGAWA ,  Nobuo Ishii

发明人： Koichi HASEGAWA ,  Nobuo Ishii

IPC分类号： C23C14/14 ,  C22C5/06 ,  C22C5/08

CPC分类号： C23C14/14 ,  C22C5/06 ,  C22C5/08 ,  C23C14/205 ,  C23C14/3414 ,  G11B7/258 ,  G11B7/259 ,  G11B7/2595 ,  G11B7/266 ,  Y10T428/21 ,  Y10T428/31678

摘要： This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.

摘要翻译： 本发明提供具有高反射率和优异耐热性的溅射靶材料，它们由Ag基合金形成，该Ag基合金通过将特定的少量P加入到Ag中并使其合金而形成。

公开(公告)号：USRE40963E1

公开(公告)日：2009-11-10

申请号：US10625669

申请日：2003-07-24

申请人： Nobuo Ishii ,  Jiro Hata

发明人： Nobuo Ishii ,  Jiro Hata

IPC分类号： H05H1/16

CPC分类号： H01J37/321 ,  H05H1/46

摘要： A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.

摘要翻译： 一种用于通过使感应电场成形来实现基板上的高度均匀的等离子体密度的方法，包括以下步骤：将基板定位在处理室中，向在处理室中产生感应电场的螺旋天线提供高频功率，产生 处理室中的等离子体，并且相对于衬底对电场进行成形以实现正在处理的衬底上的等离子体的均匀分布。