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公开(公告)号:US20230251207A1
公开(公告)日:2023-08-10
申请号:US18004683
申请日:2021-05-14
发明人: Shinji SUGIHARA
IPC分类号: G01N21/956 , G06T7/00 , G06T7/13 , G06V10/74 , G01B11/16
CPC分类号: G01N21/95607 , G06T7/001 , G06T7/13 , G06V10/761 , G01B11/16 , G06T2207/30148
摘要: A pattern inspection apparatus according to one aspect of the present invention includes an image acquisition mechanism configured to acquire an inspection image of a substrate on which a figure pattern is formed, a distortion coefficient calculation circuit configured to calculate, using a plurality of actual image outline positions on an actual image outline of the figure pattern in the inspection image and a plurality of reference outline positions on a reference outline to be compared with the actual image outline, distortion coefficients by performing weighting in a predetermined direction at each actual image outline position of the plurality of actual image outline positions caused by distortion of the inspection image, a distortion vector estimation circuit configured to estimate, for each actual image outline position of the plurality of actual image outline positions, a distortion vector by using the distortion coefficients, and a comparison circuit configured to compare, using the distortion vector at each actual image outline position, the actual image outline with the reference outline.
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公开(公告)号:US11658002B2
公开(公告)日:2023-05-23
申请号:US17463967
申请日:2021-09-01
发明人: Ryoichi Kakehi , Takahito Nakayama
IPC分类号: H01J37/21 , H01J37/28 , H01J37/147 , H01J37/10
CPC分类号: H01J37/21 , H01J37/10 , H01J37/1471 , H01J37/28 , H01J2237/0435
摘要: A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.
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23.
公开(公告)号:US20230145411A1
公开(公告)日:2023-05-11
申请号:US18148588
申请日:2022-12-30
发明人: Shinji SUGIHARA
IPC分类号: H01J37/22 , H01J37/244 , G01N23/2251 , G06T7/00 , G06T7/33
CPC分类号: H01J37/222 , H01J37/244 , G01N23/2251 , G06T7/001 , G06T7/337 , H01J2237/2617 , H01J37/09
摘要: A pattern inspection apparatus includes an actual outline image generation circuit to generate an actual outline image of a predetermined region defined by a function, where the gray scale value of each pixel in the predetermined region including plural actual image outline positions on an actual image outline of a figure pattern in an inspection image is dependent on a distance from the center of a pixel concerned to the closest actual image outline position in the plural actual image outline positions, and a reference outline image generation circuit to generate a reference outline image of the predetermined region defined by the function, where a gray scale value of each pixel in the predetermined region is dependent on a distance from the center of a pixel concerned to the closest reference outline position in plural reference outline positions on a reference outline to be compared with the actual image outline.
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公开(公告)号:US20230111566A1
公开(公告)日:2023-04-13
申请号:US17962825
申请日:2022-10-10
发明人: Eita FUJISAKI , Takahito NAKAYAMA
IPC分类号: H01J37/04 , H01J37/317 , H01J37/20 , G03F7/20
摘要: A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.
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公开(公告)号:US20230064343A1
公开(公告)日:2023-03-02
申请号:US17823558
申请日:2022-08-31
IPC分类号: H01J37/244 , H01J37/32
摘要: A discharge detection apparatus includes a vacuum container, a conductive installation member in the vacuum container, the installation member being connected to the vacuum container so as to be retained by the vacuum container; a conductive antenna in the vacuum container; and a retainer comprising a material having a specific resistance of 1×105 to 1×1011 (Ω·cm), the retainer retaining the antenna with respect to the installation member without a contact between the installation member and the antenna, by means of a screw located through an inside of the antenna and an inside of the retainer.
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26.
公开(公告)号:US20230055778A1
公开(公告)日:2023-02-23
申请号:US17819048
申请日:2022-08-11
发明人: Hirofumi MORITA , Takanao TOUYA
IPC分类号: H01J37/317 , H01J37/147
摘要: In one embodiment, a multi charged particle beam writing method includes forming a multi charged particle beam with which a substrate serving as a writing target is irradiated, deflecting the multi charged particle beam to a position with a predetermined deflection offset added so that deflection voltages respectively applied to a plurality of electrodes of an electrostatic positioning deflector does not include a state where all the deflection voltages are zero, and irradiating the substrate with the multi charged particle beam. A positive common voltage is added to the deflection voltages which are applied to the respective electrodes of the electrostatic positioning deflector.
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27.
公开(公告)号:US20230053272A1
公开(公告)日:2023-02-16
申请号:US17844360
申请日:2022-06-20
发明人: Kenichi YASUI
IPC分类号: H01J37/302 , H01J37/317
摘要: In one embodiment, a data generation method includes generating a plurality of parametric elements by dividing, at positions of an extremum and an inflection point, a parametric curve that expresses a shape of a writing pattern and is defined by a plurality of control points arranged in order in a predetermined direction, generating a polygon by extracting, for each of the parametric elements, one or some of the plurality of control points and connecting the extracted control points in order in the predetermined direction, calculating a coverage by the polygon in each of a plurality of rectangular segmented regions obtained by dividing a target to be irradiated with a charged particle beam into a predetermined size, and calculating a coverage of each segmented region in a peripheral part of the writing pattern by finding intersections of each of the plurality of parametric elements and four sides of each of the plurality of segmented regions.
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公开(公告)号:US20220365010A1
公开(公告)日:2022-11-17
申请号:US17658557
申请日:2022-04-08
发明人: Koichi ISHII , Atsushi ANDO
IPC分类号: G01N23/225
摘要: A multiple secondary electron beam alignment method includes scanning a plurality of first detection elements of a multi-detector, which are arrayed in a grid, with multiple secondary electron beams emitted from a surface of a target object on a stage, detecting a plurality of beams including a corner beam located at a corner in the multiple secondary electron beams by the multi-detector, calculating a positional relationship between the plurality of beams including the corner beam and a plurality of second detection elements, which have detected the plurality of beams including the corner beam, in the plurality of first detection elements, calculating, based on the positional relationship, a shift amount for aligning the plurality of first detection elements with the multiple secondary electron beams, and moving, using the shift amount, the multi-detector relatively to the multiple secondary electron beams.
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29.
公开(公告)号:US20220359156A1
公开(公告)日:2022-11-10
申请号:US17812815
申请日:2022-07-15
发明人: Tsubasa NANAO , Osamu IIZUKA
IPC分类号: H01J37/304 , H01J37/317 , H01J37/147 , G03F7/20
摘要: The mark position is measured with a multi-beam with high accuracy. A multi charged particle beam writing method includes forming a multi-beam (30a-30e) in which charged particle beams are arranged with a predetermined pitch, irradiating a mark (M) with beams in an on-beam region while shifting irradiation positions of the charged particle beams by sequentially changing the on-beam region in which beams in a partial region of the multi-beam (30a-30e) are set to ON, the mark (M) being provided at a predetermined position and having a width greater than the predetermined pitch, detecting a reflected charged particle signal from the mark (M), and calculating a position of the mark (M), and adjusting the irradiation positions of the multi-beam based on the calculated position of the mark (M), and writing a pattern.
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公开(公告)号:US20220336183A1
公开(公告)日:2022-10-20
申请号:US17655661
申请日:2022-03-21
发明人: Koichi ISHII , Chosaku NODA
IPC分类号: H01J37/147 , H01J37/244 , H01J37/20 , H01J37/26 , H01J37/22
摘要: A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detection element.
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