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21.发明授权Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth 有权通过选择性外延生长制造垂直于（001）取向衬底的光学质量面公开(公告)号：US08841756B2
公开(公告)日：2014-09-23
申请号：US12200139
申请日：2008-08-28
CPC分类号： H01L21/02642 , H01L21/02373 , H01L21/02387 , H01L21/02433 , H01L21/02609 , H01L33/007 , H01S5/0205
摘要： Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.
摘要翻译： 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。
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22.发明申请DOUGHTNUT-SHAPED HOLLOW CORE BODY, BIDIRECTIONAL HOLLOW CORE SLAB USING THE SAME, AND CONSTRUCTION METHOD THEREOF 审中-公开DOUGHTNUT形状中空芯体，双向中空芯板使用它，及其构造方法公开(公告)号：US20130036693A1
公开(公告)日：2013-02-14
申请号：US13581597
申请日：2010-10-21
申请人： Seung Chang Lee , Jeong Keun Oh , Chang Sik Choi , Hyun Ki Choi
发明人： Seung Chang Lee , Jeong Keun Oh , Chang Sik Choi , Hyun Ki Choi
摘要： The present invention relates to a lightweight bidirectional hollow core slab, and a doughnut-shaped hollow core body which may be advantageously used in the construction of a bidirectional hollow core slab. The doughnut-shaped hollow core body according to the present invention includes an outer case formed in a generally doughnut shape, wherein a hollow portion with a circular section is formed in the center thereof and corners are rounded with curved surfaces. The bidirectional hollow core slab according to the present invention is made by stably locating the doughnut-shaped hollow core bodies in concrete in such a manner that the doughnut-shaped hollow core body is restrained and mounted in steel bar cages or on the upper and lower steel bars.
摘要翻译： 本发明涉及一种轻质的双向中空芯板，以及可以有利地用于双向中空芯板的结构中的环形空心芯体。 根据本发明的环形空心芯体包括形成为大致环形形状的外壳，其中具有圆形截面的中空部分形成在其中心，并且拐角被弯曲的表面圆化。 根据本发明的双向中空芯板通过将环形中空芯体稳定地定位在混凝土中，使得环形中空芯体被限制并安装在钢筋笼中或上下 钢筋。
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23.发明申请FABRICATION OF OPTICAL-QUALITY FACETS VERTICAL TO A (001) ORIENTATION SUBSTRATE BY SELECTIVE EPITAXIAL GROWTH 有权通过选择性外延生长垂直于A（001）方位基板的光学质量面的制造公开(公告)号：US20080315370A1
公开(公告)日：2008-12-25
申请号：US12200139
申请日：2008-08-28
IPC分类号： H01L29/04
CPC分类号： H01L21/02642 , H01L21/02373 , H01L21/02387 , H01L21/02433 , H01L21/02609 , H01L33/007 , H01S5/0205
摘要： Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.
摘要翻译： 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。
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