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    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    2.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权
    用于制造具有改进的衬底材料使用的玻璃和氮的轴承激光器件的方法

    公开(公告)号：US20150229100A1

    公开(公告)日：2015-08-13

    申请号：US14176403

    申请日：2014-02-10

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02

    CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

    Semiconductor optical device and method for fabricating the same
    4.
    发明申请
    Semiconductor optical device and method for fabricating the same 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20020055198A1

    公开(公告)日：2002-05-09

    申请号：US10026809

    申请日：2001-12-27

    Applicant: LG Electronics Inc.

    Inventor： Wook Kim ,  Tae Kyung Yoo

    IPC: H01L021/00

    CPC classification number: H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

    Abstract: A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

    Abstract translation: 一种半导体光学器件及其制造方法。 半导体光学器件包括衬底，形成在衬底上的第一导电类型的半导体电极层，并且具有形成在其中所需深度的沟槽;第一导电类型的半导体层由沟槽的侧壁形成直到 第一导电类型的包覆层，第一导电类型的有源层，第二导电类型的包层和半导体电极层的半导体类型的半导体电极层的一部分， 顺序地形成在第一导电类型的半导体层上的第二导电类型以及分别形成在第一和第二导电类型的半导体电极层上的第一和第二导电类型的电极。

    Method for Manufacturing Gallium and Nitrogen Bearing Laser Devices With Improved Usage of Substrate Material
    5.
    发明申请
    Method for Manufacturing Gallium and Nitrogen Bearing Laser Devices With Improved Usage of Substrate Material 有权
    制造具有改善基板材料用途的镓和氮轴承激光器件的方法

    公开(公告)号：US20160359294A1

    公开(公告)日：2016-12-08

    申请号：US15173441

    申请日：2016-06-03

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  MELVIN MCLAURIN ,  PO SHAN HSU ,  JAMES W. RARING

    IPC: H01S5/02 ,  H01S5/343

    CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
    8.
    发明授权
    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth 有权
    通过选择性外延生长制造垂直于（001）取向衬底的光学质量面

    公开(公告)号：US07432161B2

    公开(公告)日：2008-10-07

    申请号：US11326431

    申请日：2006-01-06

    Applicant: Seung-Chang Lee ,  Steven R. J. Brueck

    Inventor： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC: H01L21/336

    CPC classification number: H01L21/02642 ,  H01L21/02373 ,  H01L21/02387 ,  H01L21/02433 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0205

    Abstract: Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

    Abstract translation: 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。

    Semiconductor optical device and method for fabricating the same
    9.
    发明授权
    Semiconductor optical device and method for fabricating the same 有权

    公开(公告)号：US06337223B1

    公开(公告)日：2002-01-08

    申请号：US09351439

    申请日：1999-07-12

    Applicant: Wook Kim ,  Tae Kyung Yoo

    Inventor： Wook Kim ,  Tae Kyung Yoo

    IPC: H01L2120

    CPC classification number: H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

    Abstract: A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

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