Ferroelectric/paraelectric materials, and phase shifter devices, true time delay devices and the like containing same
    22.
    发明授权
    Ferroelectric/paraelectric materials, and phase shifter devices, true time delay devices and the like containing same 失效
    铁电/顺电材料和移相器装置,真正的时间延迟装置等等

    公开(公告)号:US06875369B1

    公开(公告)日:2005-04-05

    申请号:US10307528

    申请日:2002-11-26

    CPC classification number: H01P1/181

    Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric lead-based perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of −80° C. to 100° C.), reasonable loss tangents (

    Abstract translation: 单相,非立方和单相,立方铁电/直流铅基钙钛矿结构材料具有合理低且相当温度不敏感的介电常数(在-80°C至更高的工作温度范围内的稳定的介电常数 提供合理的损耗角正切(<〜10 -1),高可调性,并且显着降低居里温度低于以前未掺杂的钙钛矿结构的操作温度范围。 本发明的FE / PE材料在钙钛矿结构的Ti部位具有稀释的电荷补偿取代。 这种单相结构或其具有富Ti组合物的变体允许脉冲激光沉积薄膜,使靶的结构均匀转移到沉积膜中,这使得能够非常小的 ,轻便的设备,非常高效,消耗很少的电力。 这些铁电/顺电材料可用于移相器装置(例如在手机,天线等中使用),可变真实时间延迟装置,可转向光束,可调谐滤波器,阻抗变压器,可变控制振荡器,天线,无线电,滤波器 微波可变电容器,雷达系统,电子战传感器,谐振器,微波横向电磁铁电压控振荡器以及用于合成器和系统的其他RF,微波或毫米波可调谐装置,以及任何 提高各类电气和电光器件性能的应用。

    Apparatus for precision measurement of microwave material properties as functions of temperature and frequency
    23.
    发明授权
    Apparatus for precision measurement of microwave material properties as functions of temperature and frequency 失效
    用于精密测量微波材料性能的装置,作为温度和频率的函数

    公开(公告)号:US06864690B1

    公开(公告)日:2005-03-08

    申请号:US10087766

    申请日:2002-03-05

    CPC classification number: G01R27/2658 G01N22/00

    Abstract: Apparatus for the precise positioning of a sample of dielectric material into a cavity resonator system for obtaining dielectric constant, and other measurements. Precision micrometer drive units are provided to move the sample about a vertical axis, to tilt the sample, and to move the sample in X, Y and Z directions. The drive units are positioned on a bearing slide for ease of sample positioning into and out of the cavity. Selected drive units are controllable from a remote location so that the apparatus may be utilized in an environmental chamber whereby measurements may be accomplished without opening the chamber after each measurement. All components of the resonator system, positioning units, cables, etc. are chosen such that they are operable over the desired temperature range of operation.

    Abstract translation: 用于将介电材料样品精确定位到空腔谐振器系统中用于获得介电常数和其它测量的装置。 提供精密千分表驱动单元以使样品围绕垂直轴移动,倾斜样品,并在X,Y和Z方向上移动样品。 驱动单元位于轴承滑块上,以便于样品定位进入和离开空腔。 选择的驱动单元可从远程位置控制,使得该设备可以在环境室中使用,从而可以在每次测量之后不打开室来实现测量。 选择谐振器系统,定位单元,电缆等的所有部件,使得它们可以在所需的操作温度范围内操作。

    Low polarizability of Sb5+ for use in fabrication of low dielectric constant materials
    25.
    发明授权
    Low polarizability of Sb5+ for use in fabrication of low dielectric constant materials 失效
    Sb5 +的低极化率用于低介电常数材料的制造

    公开(公告)号:US06183715B2

    公开(公告)日:2001-02-06

    申请号:US09069794

    申请日:1998-04-30

    CPC classification number: H01P3/08 C01G30/026 C01P2002/34 C01P2002/77

    Abstract: The microwave properties of numerous perovskite antimonates like A2MeSbO6 where A=Ba or Sr, Me=a rare earth, Y, Sc, Ga, or In and A4MeSb3O12 where A=Ba or Sr and M=Li, Na or K were measured at 10 Ghz and 300 K. Using the microwave properties and lattice parameters of these materials, the Clausius-Mossotti relationship and a nonlinear regression fitting program, the polarizability of Sb5+ was investigated and determined to be 1.18±0.49 A3. This low polarizability and the low loss of antimonates in general indicate that Sb5+ is an excellent candidate for use as a constituent in the fabrication of low dielectric constant, low loss, lattice matching perovskite oxide microwave substrates.

    Abstract translation: 其中A = Ba或Sr,Me =稀土,Y,Sc,Ga或In和A4MeSb3O12的许多钙钛矿锑酸盐如A2MeSbO6的微波特性,其中A = Ba或Sr和M = Li,Na或K在10 Ghz和300K。使用这些材料的微波特性和晶格参数,克劳修斯 - 莫索蒂关系和非线性回归拟合程序,研究了Sb5 +的极化率,并确定为1.18±0.49 A3。 这种低的极化率和低的锑酸盐损失一般表明Sb5 +是制造低介电常数,低损耗,晶格匹配的钙钛矿氧化物微波衬底中的组成成分的极好候选物。

    Fabrication of silicon microclusters and microfilaments
    27.
    发明授权
    Fabrication of silicon microclusters and microfilaments 失效
    硅微团簇和微丝的制造

    公开(公告)号:US5593742A

    公开(公告)日:1997-01-14

    申请号:US518770

    申请日:1995-08-24

    CPC classification number: B82Y10/00 C23C14/16 C23C14/28 C30B23/002 C30B29/06

    Abstract: An ablation process by which fused deposits of silicon particles are accuated on a substrate of selected material in accordance with whether microclusters of spherical configurations or microfilaments of cylindrical configurations are to be fabricated. Silicon ablation is accomplished in an inert gas atmosphere with an excimer laser that generates light pulses of which the wavelength and frequency are controlled to fix the energy level thereof. The pressure of the inert gas atmosphere is also controlled in accordance with whether microclusters or microfilaments are to be fabricated.

    Abstract translation: 根据是否要制造球形结构的微球或圆柱形构造的微丝,消融过程通过其将硅颗粒的熔融沉积物积聚在所选材料的基底上。 硅消融在具有准分子激光器的惰性气体气氛中实现,其产生其脉冲和频率被控制以固定其能量水平的光脉冲。 惰性气体气氛的压力也是根据是否要制造微团粒或微丝来控制的。

    C-axis oriented high temperature superconductors deposited onto single
crystals of gadolinium gallium garnet and method of making the same
    28.
    发明授权
    C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same 失效
    沉积在钆镓石榴石的单晶上的C轴取向的高温超导体及其制造方法

    公开(公告)号:US5418215A

    公开(公告)日:1995-05-23

    申请号:US228788

    申请日:1994-04-12

    CPC classification number: H01L39/2458 Y10S428/93 Y10S505/701

    Abstract: c-axis oriented microwave quality HTSC films are deposited onto single crystals of gadolinium gallium garnet (GGG) using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure, a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sub.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the GGG exhibit a mismatch of less than 2.5 percent with the a and b lattice parameters of the HTSC.

    Abstract translation: c轴定向微波质量HTSC薄膜使用脉冲激光沉积(PLD)沉积到钆镓石榴石(GGG)的单晶上,条件为85mTorr氧分压,阻挡温度为730℃,衬底表面温度 790℃,目标激光注量为1〜2焦耳/平方厘米,激光重复频率为10赫兹,目标与基板间距为7厘米,其中GGG的a和b晶格参数为 HTSC的a和b晶格参数的失配小于2.5%。

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