公开(公告)号：US20180013053A1

公开(公告)日：2018-01-11

申请号：US15644753

申请日：2017-07-08

申请人： Ambature, Inc.

发明人： Michael S. Lebby ,  Davis H. Hartmann

IPC分类号： H01L39/24 ,  H01L39/22 ,  H01L39/02

CPC分类号： H01L39/2496 ,  H01L39/025 ,  H01L39/225 ,  H01L39/2432 ,  H01L39/2461

摘要： According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

公开(公告)号：US09666783B2

公开(公告)日：2017-05-30

申请号：US14389839

申请日：2013-03-13

申请人： Forschungszentrum Juelich GmbH

发明人： Mikhail Faley

IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L39/02 ,  H01L39/12

CPC分类号： H01L39/025 ,  H01L39/126 ,  H01L39/225 ,  H01L39/2461 ,  H01L39/2496

摘要： An electronic component comprising a Josephson junction and a method for producing the same are proposed. The component comprises a substrate having at least one step edge in the surface thereof and a layer made of a high-temperature superconducting material disposed thereon, wherein this layer, at the step edge, has a grain boundary that forms the one or two weak links of the Josephson junction. On both sides of the step edge, the a and/or b crystal axes in the plane of the high-temperature superconducting layer are oriented perpendicularly to the grain boundary to within a deviation of no more than 10°, as a result of a texturing of the substrate and/or at least one buffer layer disposed between the substrate and the high-temperature superconducting layer. This can be technologically implemented, for example, by growing on the HTS layer by way of graphoepitaxy. By orienting the same crystal axis in each case perpendicularly to the step edge on both sides of the step edge, a maximal supercurrent can flow across the grain boundary induced by the step edge, and consequently across the Josephson junction.

公开(公告)号：US20160218269A1

公开(公告)日：2016-07-28

申请号：US14979012

申请日：2015-12-22

申请人： Brian Moeckly ,  Viktor Gliantsev ,  Shing-Jen Peng ,  Balam Willemsen

发明人： Brian Moeckly ,  Viktor Gliantsev ,  Shing-Jen Peng ,  Balam Willemsen

IPC分类号： H01L39/14 ,  H01L39/24 ,  H01L39/12

CPC分类号： H01L39/143 ,  C04B35/4508 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/85 ,  C04B2235/96 ,  H01L39/126 ,  H01L39/128 ,  H01L39/2432 ,  H01L39/2438 ,  H01L39/2454 ,  H01L39/2458 ,  H01L39/2461 ,  H01P1/20336 ,  H01P1/20381 ,  Y10S505/776 ,  Y10S505/777 ,  Y10S505/778 ,  Y10S505/779 ,  Y10S505/78 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/266

摘要： The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

摘要翻译： 本发明的薄膜是专为微波和RF应用而特别优化的高温超导（HTS）薄膜。 特别地，本发明专注于具有与1:2:3化学计量的显着偏差的组合物，以便产生针对微波/ RF应用优化的膜。 RF /微波HTS应用需要HTS薄膜具有优异的微波特性，特别是低表面电阻Rs和高线性表面电抗Xs即高JIMD。 因此，本发明的特征在于其由这些膜制成的微波电路的物理组成，表面形态，超导特性和性能特征。

公开(公告)号：US20160194750A1

公开(公告)日：2016-07-07

申请号：US14916363

申请日：2014-08-25

申请人： TOYO KOHAN CO., LTD. ,  ELECTRIC INDUSTRIES, LTD.

发明人： Yusuke Hashimoto ,  Teppei Kurokawa ,  Takashi Koshiro ,  Hironao Okayama ,  Tatsuoki Nagaishi ,  Kotaro Ohki ,  Genki Honda

IPC分类号： C23C14/35 ,  C23C14/54 ,  C23C14/08

CPC分类号： C23C14/35 ,  C23C14/08 ,  C23C14/083 ,  C23C14/541 ,  C23C28/321 ,  C23C28/322 ,  C23C28/3455 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22 ,  H01L39/2461

摘要： This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

摘要翻译： 本发明提供一种在金属基板上形成氧化物层的方法，与金属基板的最外层相比，能够制造具有改善的晶体取向的氧化物层。 通过RF磁控溅射在金属基板20上形成氧化物层的方法包括以下步骤：在最外层将表现出99％的c轴取向的晶体取向金属基板20进行RF磁控溅射，同时调节角度α 由位于金属基板20上的成膜位置20a处的垂直线和从成膜位置20a到位于最靠近膜形成位置的靶10上的垂直磁通密度为零的点 位置20a至15度或更小。

公开(公告)号：US09349935B2

公开(公告)日：2016-05-24

申请号：US14177589

申请日：2014-02-11

申请人： TECHNOLOGY INNOVATION MOMENTUM FUND (ISRAEL) LIMITED PARTNERSHIP

发明人： Guy Deutscher ,  Mishael Azoulay ,  Boaz Almog

IPC分类号： H01L39/00 ,  H01B12/00 ,  H01L39/24 ,  H01Q9/27 ,  H01L39/14 ,  H01L39/16

CPC分类号： H01L39/24 ,  H01L39/143 ,  H01L39/16 ,  H01L39/2435 ,  H01L39/2461 ,  H01Q9/27 ,  Y10T428/2495 ,  Y10T428/24975

摘要： Described is a superconductive layered structure and an article including this superconductive layered structure on a substrate structure. The superconductive layered structure comprises a stack including at least one bi-layered assembly formed by first and second layers of similar superconducting material compositions, the second layer being superconductive at predetermined temperature condition, the first layer being a substantially thin layer and having a c lattice parameter selected in accordance with those of the substrate structure and the second layer, such that said first layer is non-superconductive at said predetermined temperature condition thereby allowing the second superconductive layer to be desirably thick to provide high critical current density of the superconductive layer.

摘要翻译： 描述了超导层状结构和在衬底结构上包括这种超导层状结构的制品。 超导层状结构包括一个堆叠，其包括至少一个由相似的超导材料组合物的第一和第二层形成的双层组件，第二层在预定温度条件下是超导的，第一层是基本上薄的层并具有交流晶格参数 根据所述衬底结构和所述第二层的所述第一层选择，使得所述第一层在所述预定温度条件下是非超导的，从而允许所述第二超导层希望是厚的，以提供所述超导层的高临界电流密度。

公开(公告)号：US20150348682A1

公开(公告)日：2015-12-03

申请号：US14077901

申请日：2013-11-12

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Connie P. Wang ,  Paul Murphy ,  Paul Sullivan

IPC分类号： H01B12/06 ,  H01B13/30

CPC分类号： H01B12/06 ,  H01B13/30 ,  H01L39/143 ,  H01L39/16 ,  H01L39/2458 ,  H01L39/2461 ,  H01L39/2464 ,  H01L39/249 ,  H02H9/023

摘要： An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

摘要翻译： 集成超导体器件可以包括衬底基底和设置在衬底基底上并包括优选晶体取向的中间层。 集成超导体器件还可以包括设置在中间层上的取向超导体层和设置在取向超导体层的一部分上的导电条。导电条可以限定其下面的定向超导体层的超导体区域， 与超导体区域相邻的取向超导体层。

公开(公告)号：US20150279519A1

公开(公告)日：2015-10-01

申请号：US14236899

申请日：2013-06-26

申请人： FURUKAWA ELECTRIC CO., LTD.

发明人： Masaru Higuchi ,  Hisaki Sakamoto ,  Nobuaki Orita ,  Norihisa Shibayama

IPC分类号： H01B12/06 ,  H01L39/12 ,  H01L39/24 ,  H01B13/30

CPC分类号： H01B12/06 ,  H01B13/30 ,  H01L39/125 ,  H01L39/24 ,  H01L39/2461

摘要： A superconducting wire is provided which allows an appropriate critical current property to be obtained while maintaining high adhesive strength based on smoothness of a substrate surface that can be achieved without mechanical polishing or the like. A first intermediate layer 21 is formed by coating a material solution on a substrate 10 with a maximum height roughness Rz of 10 nm or more. This improves surface smoothness of the first intermediate layer 21, improves orientation and smoothness of a second intermediate layer 22 formed on the first intermediate layer 21, and increases a critical current in an oxide superconducting layer 30. Furthermore, the first intermediate layer 21 is formed of a plurality of thin coating film layers 21i. The thin coating film layers 21i are deposited such that an uppermost thin coating film layer has a smaller film thickness than a lowermost thin coating film layer and/or a material solution used for the uppermost thin coating film layer has a lower viscosity than a material solution used for the lowermost thin coating film layer. This improves the surface smoothness of the first intermediate layer 21.

摘要翻译： 提供了一种超导线，其允许在基于在没有机械抛光等的情况下可以实现的基板表面的平滑度的同时保持高粘合强度的同时获得适当的临界电流特性。 第一中间层21通过以10nm以上的最大高度粗糙度Rz在基板10上涂布材料溶液而形成。 这提高了第一中间层21的表面平滑度，改善了形成在第一中间层21上的第二中间层22的取向和平滑度，并且增加了氧化物超导层30中的临界电流。此外，形成第一中间层21 的多个薄膜层21i。 沉积薄的涂膜层21i，使得最薄的涂膜层的膜厚比最下面的薄膜层薄，和/或用于最上面的薄涂层层的材料溶液的粘度低于材料溶液 用于最薄的薄膜层。 这提高了第一中间层21的表面平滑度。

公开(公告)号：US20150262734A1

公开(公告)日：2015-09-17

申请号：US14629982

申请日：2015-02-24

申请人： Kabushiki Kaisha Toshiba

发明人： Kohei NAKAYAMA ,  Tamio KAWAGUCHI ,  Hiroaki IKEUCHI ,  Hiroyuki KAYANO

IPC分类号： H01B12/06 ,  H01L39/24 ,  H01L39/12 ,  H01B13/00 ,  H01B1/08

CPC分类号： H01B12/06 ,  H01B1/08 ,  H01B13/00 ,  H01L39/143 ,  H01L39/2461 ,  Y10T428/2495 ,  Y10T428/26

摘要： According to one embodiment, a superconducting member includes a superconducting layer, a foundation layer, and an intermediate layer. The superconducting layer is made of an oxide including Cu and Ba. The foundation layer is made of cerium oxide. The intermediate layer is provided between the foundation layer and the superconducting layer, and is made of BaxCayCeO3 (0.6

摘要翻译： 根据一个实施例，超导构件包括超导层，基础层和中间层。 超导层由包括Cu和Ba的氧化物制成。 基础层由氧化铈制成。 中间层设置在基底层和超导层之间，并由BaxCayCeO3（0.6

公开(公告)号：US09023764B2

公开(公告)日：2015-05-05

申请号：US13766994

申请日：2013-02-14

申请人： Kabushiki Kaisha Toshiba

发明人： Takeshi Araki ,  Mariko Hayashi ,  Ko Yamada ,  Hiroyuki Fuke

IPC分类号： H01B12/06 ,  H01L39/24 ,  B05D5/12 ,  B32B18/00 ,  C04B35/45 ,  H01L39/12 ,  C04B35/624

CPC分类号： H01L39/128 ,  C04B35/4508 ,  C04B35/624 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3281 ,  C04B2235/449 ,  C04B2235/522 ,  C04B2235/5268 ,  C04B2235/5296 ,  C04B2235/6585 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/787 ,  H01L39/126 ,  H01L39/2425 ,  H01L39/2461 ,  Y10S505/704

摘要： According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×1016-5.0×1019 atoms/cc and carbon at 1.0×1018-5.0×1020 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and contains a LnBa2Cu3O7-x superconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer.

摘要翻译： 根据一个实施例，氧化物超导体包括取向的超导体层和氧化物层。 定向超导体层含有2.0×1016-5.0×1019原子/ cc的氟和1.0×1018-5.0×1020原子/ cc的碳。 超导体层含有90度以上的沿着c轴取向的面积为10度以下的面内取向度（＆Dgr;＆phgr），并含有LnBa2Cu3O7-x超导体材料（Ln为钇或镧系元素 除了铈，镨，prom ium和镥）。 所述氧化物层设置成与所述超导体层的下表面接触并相对于所述超导体层的一个晶体轴取向为10度或更小的面内取向度（＆Dgr;＆phgr）。 与氧化物层接触的超导体层的下表面的一部分的面积为超导体层正下方的面积的0.3以下。

公开(公告)号：US08965469B2

公开(公告)日：2015-02-24

申请号：US13578344

申请日：2011-02-10

申请人： Tatsuhisa Nakanishi ,  Yuji Aoki ,  Tsutomu Koizumi ,  Atsushi Kaneko ,  Takayo Hasegawa

发明人： Tatsuhisa Nakanishi ,  Yuji Aoki ,  Tsutomu Koizumi ,  Atsushi Kaneko ,  Takayo Hasegawa

IPC分类号： H01B12/06 ,  H01L39/24 ,  H01B13/00 ,  H01B12/02

CPC分类号： H01B12/02 ,  H01B13/00 ,  H01L39/2461 ,  Y10S505/704 ,  Y10T29/49014

摘要： Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.

摘要翻译： 公开了氧化物超导体带和制造氧化物超导体带的方法，其能够改善超导体带的长度和特性并且在其整个长度上获得稳定的特性。 作为氧化物超导体带的Y级超导体带（10）包括进一步包括带状非取向金属基板（11）的带（13）和第一缓冲层（片层）（12），所述第一缓冲层 由IBAD形成在带状非取向金属基板（11）上; 以及第二缓冲层（间隙层）（14），还包括侧面部分（14a），其通过RTR RF延伸到所述带（13）上的所述第一缓冲层（片层）（12）的侧面 磁控溅射。