Abstract:
A method of forming a conductive electrode bump on a first side of a dielectric substrate. The electrode bump is located such that it is in electrical contact with one end of an electrically conductive via passing through the substrate. An electrically conductive test pad, located on a second side of the substrate, is in electrical contact with the opposite end of the via. The method includes the steps of (a)forming a layer of conductive material of generally uniform thickness onto the first side of the substrate, the layer being in a routing pattern for routing electrical signals along the first side; and (b)selectively reducing the thickness of the layer in locations defining the routing pattern to a greater extent than in the location of the bump to provide a bump, that extends from the first side at a height greater than the routing pattern.
Abstract:
A method and article made by such method are described for connecting electrodes on one face of an integrated circuit semiconductor device with those on a supporting substrate. The method comprises positioning electrodes formed on one face of the device into engagement with electrodes formed on the substrate. A force is applied to press the electrodes together and during application of the force a first adhesive is applied along only a minor portion of two edges of the device. The first adhesive is stiffened to provide a temporary connection of the device and the substrate. A mass of a second adhesive is applied over a face of said device opposite said one face and onto portions of the substrate adjacent the periphery of the device with substantially no adhesive located between the one face of the device and the substrate at a center area of the one face. The second adhesive is hardened to form an adhesive dome that permanently connects the device to the substrate.