公开(公告)号：US08052790B2

公开(公告)日：2011-11-08

申请号：US12407405

申请日：2009-03-19

Applicant: Se-Jin Chung

Inventor： Se-Jin Chung

IPC: C30B29/06

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L27/1285

Abstract: A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.

Abstract translation: 本发明的硅结晶掩模包括： 主曝光部分，其包括完全透射光的多个完整光透射区域，以及包括多个不完全光透射区域的预曝光部分，其中每个部分透射光部分透射光，其中至少两个不完全透光区域具有 不同大小的透光率彼此相差。

公开(公告)号：US20100186796A1

公开(公告)日：2010-07-29

申请号：US12618643

申请日：2009-11-13

Applicant: Kang-Hee Lee ,  Byoung-Dong Kim ,  Se-Jin Chung ,  Gug-Il Jun ,  Woo-Su Lee ,  Byung-Joo Lee

Inventor： Kang-Hee Lee ,  Byoung-Dong Kim ,  Se-Jin Chung ,  Gug-Il Jun ,  Woo-Su Lee ,  Byung-Joo Lee

IPC: H01L31/042

CPC classification number: H01L31/0508 ,  H01L31/0465 ,  H02S40/36 ,  Y02E10/50

Abstract: A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.

Abstract translation: 提供太阳能电池模块。 太阳能电池模块包括：基板; 多个单元电池，包括依次沉积在基板上的第一电极，半导体层和第二电极; 分别具有单元的第一子模块和第二子模块; 划分第一子模块的单位单元的第一纵向模式和划分第二子模块的单位单元的第二纵向模式; 划分所述第一子模块和所述第二子模块的横向图案; 以及设置在横向图案附近并在第一子模块和第二子模块之间绝缘的绝缘部分，其中第一子模块的单元电池通过第一纵向图案串联连接，单元电池 第二子模块通过第二纵向图案串联连接，并且第一子模块和第二子模块通过横向图案串联连接。

公开(公告)号：US07364992B2

公开(公告)日：2008-04-29

申请号：US11506723

申请日：2006-08-18

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: A method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 一种形成具有改善的电特性的多晶硅薄膜的方法和使用形成多晶硅薄膜的方法制造薄膜晶体管的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US20060211181A1

公开(公告)日：2006-09-21

申请号：US11378861

申请日：2006-03-17

Applicant: Se-jin Chung

Inventor： Se-jin Chung

IPC: H01L21/84 ,  H01L21/00

CPC classification number: H01L27/1285 ,  H01L29/78672

Abstract: Provided are a method of manufacturing a polysilicon thin film transistor plate, which includes leveling the surface of crystallized polysilicon having protruding grains at grain boundaries to improve the electrical characteristics of an active layer, and a liquid crystal display including a polysilicon thin film transistor plate manufactured by the method. The method of manufacturing a polysilicon thin film transistor plate includes loading a substrate on which polysilicon grains are formed, removing protruding grains at grain boundaries among the polysilicon grains by chemical mechanical polishing (“CMP”) and forming a polished substrate, cleaning the polished substrate and forming a cleaned substrate, and unloading the cleaned substrate.

Abstract translation: 提供一种制造多晶硅薄膜晶体管板的方法，其包括使晶界处具有突出晶粒的晶化多晶硅的表面平整以提高有源层的电特性，以及液晶显示器，其包括制造的多晶硅薄膜晶体管板 通过该方法。 制造多晶硅薄膜晶体管板的方法包括加载其上形成多晶硅颗粒的衬底，通过化学机械抛光（“CMP”）去除多晶硅晶粒之间的晶界处的突出晶粒并形成抛光衬底，清洁抛光衬底 并且形成清洁的基板，并且卸​​载被清洁的基板。