公开(公告)号：US20090040663A1

公开(公告)日：2009-02-12

申请号：US12248522

申请日：2008-10-09

Applicant: Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

IPC: G11B5/127 ,  G11B5/33

CPC classification number: G11C11/1693 ,  G11B5/66 ,  G11C11/1659 ,  G11C11/1675

Abstract: A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane.

Abstract translation: 磁存储器包括堆叠，第一写入线和第二写入线。 堆叠包括磁性固定层，隧道势垒绝缘层和无磁性层，以形成磁性隧道结（MTJ）。 MTJ具有容易的轴。 第一根电线被放置在堆叠下方。 第一写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。 第二个写入线设置在堆叠上方。 第二写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。

公开(公告)号：US20090034322A1

公开(公告)日：2009-02-05

申请号：US11946025

申请日：2007-11-27

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

IPC: G11C11/02

CPC classification number: G11C11/15 ,  Y10S977/935

Abstract: A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.

Abstract translation: 磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。 多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。 每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。 每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。 易轴和第一方向写电流线形成约45°的包含角度。 读位线电路连接到存储器单元的第一端。 读取字线电路连接到存储器单元的第二端子。

公开(公告)号：US20070195593A1

公开(公告)日：2007-08-23

申请号：US11459029

申请日：2006-07-21

Applicant: Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

Inventor： Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: A structure of magnetic memory cell, suitable for a magnetic memory device with toggle mode access operation is provided, which includes a magnetic pinned stacked layer as a portion of a substrate structure; a tunnel barrier layer disposed on the magnetic pinned stacked layer; a magnetic free stacked layer disposed on the tunnel barrier layer; a magnetic bias stacked layer disposed on the magnetic free stacked layer, wherein the magnetic bias stacked layer applies a compensative magnetic field to the magnetic free stacked layer, so as to move a toggle operation region towards a magnetic zero point. Further, the magnetic field effect of the magnetic bias stacked layer also includes reducing a direct mode region adjacent to the toggle operation region.

Abstract translation: 提供了适用于具有拨动模式存取操作的磁存储器件的磁存储单元的结构，其包括作为衬底结构的一部分的磁性固定堆叠层; 设置在所述磁性钉扎层叠层上的隧道势垒层; 设置在隧道势垒层上的无磁性堆叠层; 设置在无磁性层叠层上的磁偏置堆叠层，其中所述磁偏置堆叠层向所述无磁性堆叠层施加补偿磁场，以将触发操作区域朝向磁零点移动。 此外，磁偏置堆叠层的磁场效应还包括减少与肘节操作区域相邻的直接模式区域。

公开(公告)号：US20070171703A1

公开(公告)日：2007-07-26

申请号：US11558297

申请日：2006-11-09

Applicant: Rei-Fu Huang ,  Young-Shying Chen ,  Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

Inventor： Rei-Fu Huang ,  Young-Shying Chen ,  Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A current source for magnetic random access memory (MRAM) is provided, including a band-gap reference circuit, a first stage buffer, and a plurality of second stage buffers. The band-gap reference circuit provides an output reference voltage which is locked by the first stage buffer. The plurality of second stage buffers generate a stable voltage in response to the locked voltage, so as to provide a current for the conducting wire after being converted, such that magnetic memory cell changes its memory state in response to the current. The current source may reduce the discharge time under the operation of biphase current, so as to raise the operating speed. Further, the circuit area of the current source for the MRAM is also reduced. The operation of multiple write wires may be provided simultaneously to achieve parallel write.

Abstract translation: 提供了一种用于磁随机存取存储器（MRAM）的电流源，包括带隙参考电路，第一级缓冲器和多个第二级缓冲器。 带隙基准电路提供由第一级缓冲器锁定的输出参考电压。 多个第二级缓冲器响应于锁定电压产生稳定的电压，以便在转换之后为导线提供电流，使得磁存储单元响应于电流来改变其存储状态。 电流源可以减少双相电流运行时的放电时间，从而提高运行速度。 此外，MRAM的电流源的电路面积也减小。 可以同时提供多条写入线的操作以实现并行写入。

公开(公告)号：US20060138509A1

公开(公告)日：2006-06-29

申请号：US11155465

申请日：2005-06-20

Applicant: Yuan-Jen Lee ,  Yung-Hung Wang ,  Lien-Chang Wang ,  Ming-Jer Kao

Inventor： Yuan-Jen Lee ,  Yung-Hung Wang ,  Lien-Chang Wang ,  Ming-Jer Kao

IPC: H01L27/108

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3281

Abstract: A magnetic random access memory with lower switching field through indirect exchange coupling. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, a metal layer formed on the ferromagnetic free layer, and a second antiferromagnetic layer formed on the metal layer. The anisotropy axis of the second antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged in parallel. The net magnetic moment of the antiferromagnetic layer interface between the second antiferromagnetic layer and the metal layer is close to zero. The memory has the advantages of lowering the switching field of the ferromagnetic layer and lowering the writing current.

Abstract translation: 通过间接交换耦合的具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁性层上的被钉扎层，形成在钉扎层上的隧道阻挡层，形成在隧道势垒层上的铁磁自由层，形成在铁磁自由层上的金属层，以及 形成在金属层上的第二反铁磁层。 第二反铁磁性层和铁磁性层的各向异性轴与铁磁性层的各向异性轴平行排列。 第二反铁磁层与金属层之间的反铁磁层界面的净磁矩接近零。 存储器具有降低铁磁层的开关场和降低写入电流的优点。

公开(公告)号：US07539049B2

公开(公告)日：2009-05-26

申请号：US11946025

申请日：2007-11-27

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

IPC: G11C11/00

CPC classification number: G11C11/15 ,  Y10S977/935

Abstract: A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.

Abstract translation: 磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。 多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。 每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。 每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。 易轴和第一方向写电流线形成约45°的包含角度。 读位线电路连接到存储器单元的第一端。 读取字线电路连接到存储器单元的第二端子。

公开(公告)号：US07515458B2

公开(公告)日：2009-04-07

申请号：US11465460

申请日：2006-08-18

Applicant: Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

Inventor： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.

Abstract translation: 在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。 堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。 隧道势垒层设置在堆叠的磁性钉扎层上。 无磁性堆叠层设置在隧道势垒层上。 无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。 当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。 磁偏置层也可以设置在顶部自由层上。

公开(公告)号：US20070030727A1

公开(公告)日：2007-02-08

申请号：US11338653

申请日：2006-01-25

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

IPC: G11C11/14

CPC classification number: G11C11/1693 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

Abstract translation: 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

公开(公告)号：US20060102971A1

公开(公告)日：2006-05-18

申请号：US11159137

申请日：2005-06-23

Applicant: Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

Inventor： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

IPC: H01L43/00 ,  H01L29/82 ,  G11C11/22

CPC classification number: G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

Abstract: A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

Abstract translation: 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。