公开(公告)号：US07872904B2

公开(公告)日：2011-01-18

申请号：US12108498

申请日：2008-04-23

Applicant: Ding-Yeong Wang ,  Yuan-Jen Lee ,  Chien-Chung Hung

Inventor： Ding-Yeong Wang ,  Yuan-Jen Lee ,  Chien-Chung Hung

IPC: G11C11/00

CPC classification number: G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

Abstract: A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.

Abstract translation: 提供了包括用于形成阵列的多个存储单元的磁随机存取存储器（MRAM）。 每个存储单元具有无磁性堆叠层和钉扎堆叠层。 钉扎堆叠层的磁化朝向预定方向设置。 无磁性堆叠层具有易磁化的轴。 相邻两个存储单元的两个易磁化轴基本上彼此垂直。

公开(公告)号：US07800937B2

公开(公告)日：2010-09-21

申请号：US12219247

申请日：2008-07-18

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

IPC: G11C11/00

CPC classification number: G11C11/1693 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

Abstract translation: 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

公开(公告)号：US20090316472A1

公开(公告)日：2009-12-24

申请号：US12108498

申请日：2008-04-23

Applicant: Ding-Yeong Wang ,  Yuan-Jen Lee ,  Chien-Chung Hung

Inventor： Ding-Yeong Wang ,  Yuan-Jen Lee ,  Chien-Chung Hung

IPC: G11C11/00 ,  G11C11/14

CPC classification number: G11C11/1657 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

Abstract: A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.

Abstract translation: 提供了包括用于形成阵列的多个存储单元的磁随机存取存储器（MRAM）。 每个存储单元具有无磁性堆叠层和钉扎堆叠层。 钉扎堆叠层的磁化朝向预定方向设置。 无磁性堆叠层具有易磁化的轴。 相邻两个存储单元的两个易磁化轴基本上彼此垂直。

公开(公告)号：US20090039450A1

公开(公告)日：2009-02-12

申请号：US11964008

申请日：2007-12-25

Applicant: Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268

Abstract: A structure of magnetic memory cell including a first anti-ferromagnetic layer is provided. A first pinned layer is formed over the first anti-ferromagnetic layer. A tunneling barrier layer is formed over the first pinned layer. A free layer is formed over the tunneling barrier layer. A metal layer is formed over the free layer. A second pinned layer is formed over the metal layer. A second anti-ferromagnetic layer is formed over the second pinned layer.

Abstract translation: 提供了包括第一反铁磁层的磁存储单元的结构。 在第一反铁磁层上形成第一被钉扎层。 隧道势垒层形成在第一钉扎层上。 在隧道势垒层上形成自由层。 在自由层上形成金属层。 第二被钉扎层形成在金属层上。 在第二被钉扎层上形成第二反铁磁层。

公开(公告)号：US07463510B2

公开(公告)日：2008-12-09

申请号：US11707100

申请日：2007-02-16

Applicant: Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

Inventor： Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C8/04 ,  G11C11/5607 ,  G11C19/00

Abstract: A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

Abstract translation: 磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。 存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。 第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

公开(公告)号：US20080180988A1

公开(公告)日：2008-07-31

申请号：US11754308

申请日：2007-05-27

Applicant: Yuan-Jen Lee ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Chien-Chung Hung

IPC: G11B5/147 ,  G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1693

Abstract: A direct writing method of a magnetic memory cell is provided. The magnetic memory cell includes a magnetic free stacked layer having a bottom and a top ferromagnetic layer. The bottom and top ferromagnetic layers respectively have a bi-directional easy axis in substantially the same direction. The method includes applying a first magnetic field in the direction of the bi-directional easy axis and performing a writing operation. To write a first memory state, a second magnetic field is supplied at a first side of the bi-directional easy axis with a first including angle. To write a second memory state, a third magnetic filed is supplied at a second side of the bi-directional easy axis with a second including angle. At least one of the bottom and top ferromagnetic layers has a unidirectional easy axis in different direction from the bi-directional easy axis.

Abstract translation: 提供了磁存储单元的直接写入方法。 磁存储单元包括具有底部和顶部铁磁层的无磁性堆叠层。 底部和顶部铁磁层分别具有基本上相同方向的双向容易轴。 该方法包括在双向容易轴的方向上施加第一磁场并执行写入操作。 为了写入第一存储器状态，第二磁场以第一包含角度的方式在双向易轴的第一侧提供。 为了写入第二存储器状态，第三磁场在双向容易轴的第二侧以包括角度的第二侧提供。 底部和顶部铁磁层中的至少一个在与双向易轴方向不同的方向上具有单向容易轴。

公开(公告)号：US20070253241A1

公开(公告)日：2007-11-01

申请号：US11468302

申请日：2006-08-30

Applicant: Yuan-Jen Lee ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Chien-Chung Hung

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method for accessing data on a magnetic memory is provided, wherein the data is accessed in a toggle mode. A first current line and a second current line are used for providing operation currents. The data accessing method includes a data changing operation for changing a data stored in a magnetic memory cell. During a first stage, a current in a first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line. During a stage before stopping supplying magnetic field, a current in the first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line to offset at least a portion of the biased magnetic field.

Abstract translation: 提供了一种访问磁存储器上的数据的方法，其中以切换模式访问数据。 第一电流线和第二电流线用于提供工作电流。 数据访问方法包括用于改变存储在磁存储单元中的数据的数据改变操​​作。 在第一阶段期间，向第一电流线提供沿第一方向的电流，同时向第二电流线提供第一方向的电流。 在停止提供磁场的阶段期间，将第一方向上的电流提供给第一电流线，并且将第一方向上的电流同时提供给第二电流线以偏置偏置磁场的至少一部分。

公开(公告)号：US20070201266A1

公开(公告)日：2007-08-30

申请号：US11707100

申请日：2007-02-16

Applicant: Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

Inventor： Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C8/04 ,  G11C11/5607 ,  G11C19/00

Abstract: A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

Abstract translation: 磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。 存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。 第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

公开(公告)号：US20090003043A1

公开(公告)日：2009-01-01

申请号：US12219247

申请日：2008-07-18

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

IPC: G11C11/02 ,  G11C7/00

CPC classification number: G11C11/1693 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

Abstract translation: 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

公开(公告)号：US20080247096A1

公开(公告)日：2008-10-09

申请号：US11754824

申请日：2007-05-29

Applicant: Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Ding-Yeong Wang ,  Chien-Chung Hung

IPC: G11B5/33 ,  G11B5/147 ,  G11B5/66

CPC classification number: G11C11/1693 ,  G11B5/66 ,  G11C11/1659 ,  G11C11/1675

Abstract: A magnetic memory including a stack, a first writing wire, and a second writing wire is provided. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane.

Abstract translation: 提供包括堆叠，第一写入线和第二写入线的磁性存储器。 堆叠包括磁性固定层，隧道势垒绝缘层和无磁性层，以形成磁性隧道结（MTJ）。 MTJ具有容易的轴。 第一根电线被放置在堆叠下方。 第一写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。 第二个写入线设置在堆叠上方。 第二写入线和MTJ的易轴之间的夹角在投影平面上小于45度且大于0度。