摘要:
A terminal feeding unit reducing preparation time and adapted for multi-item and small-lot production of wire harnesses and a multi-crimping apparatus employing the same are disclosed. Plural terminal feeding units (210) are incorporated into the multi-crimping apparatus (20). Each terminal feeding unit (210) has a carrier cutting section for severing a terminal portion (BS) from a terminal belt (B), a crimping section (214) located at a pressing position (A), and a feeding section (215) for feeding a terminal (T) to the crimping section (214).
摘要:
A memory cell (100) includes a read circuit (30) whose output wiring is a read bit line (RBIT) and which has a switching transistor (31), a reset transistor (32), and an output wiring driving transistor (33). The switching transistor (31) connects a data holding node (MD) of a storage circuit (10) and a control line (DR) in accordance with a control signal on a read word line (/RWL0). The reset transistor (32) resets the control line (DR) in accordance with a reset control signal (RST). The output wiring driving transistor (33) has a gate connected to the control line (DR), a drain connected to the read bit line (RBIT), and a source connected to a ground power supply.
摘要:
A dummy memory cell for detection of write completion timing is provided as a replica of a memory cell. When assisting a write operation by power supply control and substrate potential control of the memory cell, the timing of ending the write assist operation is determined by a voltage control circuit based on information about the dummy memory cell. For example, the voltage control circuit performs, in a data write operation in the memory cell, the write assist operation of decreasing the voltage of a source power supply allocated to P-channel MOS load transistors using a pull-down transistor. Thereafter, at the time when completion of the data write operation in the dummy memory cell is detected, the voltage control circuit ends the write assist operation and restores the voltage of the source power supply to the original level using a pull-up transistor.
摘要:
A memory cell (100) includes a read circuit (30) whose output wiring is a read bit line (RBIT) and which has a switching transistor (31), a reset transistor (32), and an output wiring driving transistor (33). The switching transistor (31) connects a data holding node (MD) of a storage circuit (10) and a control line (DR) in accordance with a control signal on a read word line (/RWL0). The reset transistor (32) resets the control line (DR) in accordance with a reset control signal (RST). The output wiring driving transistor (33) has a gate connected to the control line (DR), a drain connected to the read bit line (RBIT), and a source connected to a ground power supply.
摘要:
An FM receiver which can be used by being switched between stereophonic and monophonic, and comprises detecting unit for detecting a received signal, two routes over which a detected signal is transmitted to an output buffer, and a switching unit for selecting either one of the two routes. The two routes consist of a route passing through a stereophonic demodulator unit and a route bypassing the stereophonic demodulator unit; and the switching unit selects either one of the two routes based on a control signal indicating the selection of either one of stereophonic and monophonic, and, when the route bypassing the stereophonic demodulator unit is selected, turns off power supply to the stereophonic demodulator unit based on the above control signal.
摘要:
A dummy memory cell for detection of write completion timing is provided as a replica of a memory cell. When assisting a write operation by power supply control and substrate potential control of the memory cell, the timing of ending the write assist operation is determined by a voltage control circuit based on information about the dummy memory cell. For example, the voltage control circuit performs, in a data write operation in the memory cell, the write assist operation of decreasing the voltage of a source power supply allocated to P-channel MOS load transistors using a pull-down transistor. Thereafter, at the time when completion of the data write operation in the dummy memory cell is detected, the voltage control circuit ends the write assist operation and restores the voltage of the source power supply to the original level using a pull-up transistor.
摘要:
An FM/AM switch (31) selects either an FM detected signal or an AM detected signal. A capacitor (4) is provided to cut the DC component of the FM detected signal. A low-cut frequency switch (33) selects a resistor designated by a control, signal from among resistors (Ra through Rc). A high-pass filter is constituted by the capacitor (4) and a resistor selected by the low-cut frequency switch (33). The cut-off frequency of this high-pass filter is adjusted by the selection of a resistor.
摘要:
An electronic musical instrument having a plurality of switches is disclosed wherein a numerical value can be inputted without provision of a specific switch for inputting a numerical value. The electronic musical instrument has a tone/effect inputting mode in which, when one of the switches is operated, a tone or acoustic effect allocated in advance to the operated switch is set and a numeric inputting mode in which, when one of the switches is operated, a numerical value allocated in advance to the operated switch is set. A change-over switch is provided for changing over the operation mode between the tone/effect inputting mode and the numeric inputting mode.
摘要:
A sequencer according to the present invention comprises: a display having multiple data input fields for entry of information items and having a capability for distinguishing or emphasizing which of the data input fields is prepared to accept input; designating circuitry for selecting an operation mode; and a control for, when a specific operation mode is selected by the designating circuitry, facilitating the entry of information items by distinguishing or emphasizing one of the data input fields where information will most probably be entered in the specific operation mode.