公开(公告)号：US6110286A

公开(公告)日：2000-08-29

申请号：US175433

申请日：1998-10-20

申请人： Seungho Oh ,  Katsutoshi Ishii ,  Toshiharu Nishimura ,  Yutaka Takahashi

发明人： Seungho Oh ,  Katsutoshi Ishii ,  Toshiharu Nishimura ,  Yutaka Takahashi

IPC分类号： H01L21/22 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  C30B25/14 ,  H01L21/67017

摘要： A vertical processing unit 10 for semiconductor wafers has; a cylindrical processing chamber 2 having an opening 18 in an inside of an annular bottom surface, and a disk-shaped cap 6 having an annular abutting-surface 32 abutting on the annular bottom surface of the chamber. A mounting-surface 6p formed on the inside of the annular abutting-surface 32. A wafer-boat 8 for holding a wafer W to be processed is mounted on the mounting-surface 6p of the cap 6. The abutting-surface 32 has an annular groove 34A formed therein. An inert gas supply passgeway 38 is provided in communication with the annular groove 34A for supplying an inert gas into the annular groove 34A through a header 16. An ejection opening 36 for ejecting an inert gas is provided on the inner side of the annular groove 34A for communicating the annular groove 34A and the interior of the processing chamber 2. Owing to the active leaking of the nitrogen (N.sub.2) gas into the interior of the processing chamber 2 through the ejection opening 36, the corrosive gas as a processing gas in the processing chamber 2 does not leak out, so that corrosion or rusting of the equipment around the processing chamber 2 is prevented.

摘要翻译： 用于半导体晶片的垂直处理单元10具有： 在环形底面的内侧具有开口18的圆筒状的处理室2和与该室的环状底面邻接的环状的抵接面32的圆盘状的盖6。 安装表面6p，形成在环形邻接表面32的内侧。用于保持待处理晶片W的晶片舟8安装在盖6的安装表面6p上。邻接表面32具有 形成在其中的环形槽34A。 惰性气体供给接头38与环形槽34A连通，用于通过集管16将惰性气体供给到环形槽34A中。用于喷射惰性气体的喷射口36设置在环形槽34A的内侧 用于使环形槽34A和处理室2的内部连通。由于氮气（N 2）气体通过喷射开口36有效地泄漏到处理室2的内部，腐蚀性气体作为处理气体 处理室2不会泄漏，从而防止了处理室2周围的设备的腐蚀或生锈。