公开(公告)号：US09636797B2

公开(公告)日：2017-05-02

申请号：US14179297

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC: B24B49/10 ,  B24B49/14 ,  B24B49/02 ,  B24B37/013

CPC classification number: B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.