公开(公告)号：US11079459B2

公开(公告)日：2021-08-03

申请号：US15867543

申请日：2018-01-10

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC分类号： G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02

摘要： A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US09636797B2

公开(公告)日：2017-05-02

申请号：US14179297

申请日：2014-02-12

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC分类号： B24B49/10 ,  B24B49/14 ,  B24B49/02 ,  B24B37/013

CPC分类号： B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

摘要： Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.

公开(公告)号：US09472475B2

公开(公告)日：2016-10-18

申请号：US13774843

申请日：2013-02-22

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

IPC分类号： H01L21/66 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12

CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

摘要翻译： 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。

公开(公告)号：US09281253B2

公开(公告)日：2016-03-08

申请号：US14066571

申请日：2013-10-29

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC分类号： G06F19/00 ,  H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  B24B49/10

CPC分类号： B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

摘要： A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

摘要翻译： 控制抛光的方法包括：在第一抛光台处抛光衬底，用第一涡流监测系统监测衬底以产生第一信号，确定第一信号的结束值，以便在第一抛光站抛光衬底 抛光站，确定第一抛光站的第一温度，在第二抛光站抛光衬底，用第二涡流监测系统监测衬底以产生第二信号，确定第二信号的起始值以开始 在所述第二研磨站处抛光所述基板，基于所述结束值，所述起始值和所述第一温度确定所述第二抛光站的增益，以及基于所述第二信号和所述增益来计算第三信号。

公开(公告)号：US20140127971A1

公开(公告)日：2014-05-08

申请号：US13791694

申请日：2013-03-08

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Shih-Haur Shen ,  Tzu-Yu Liu ,  Ingemar Carlsson ,  Hassan G. Iravani ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Doyle E. Bennett

IPC分类号： B24B37/013

CPC分类号： B24B37/013 ,  B24B7/228 ,  B24B37/048

摘要： A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

摘要翻译： 一种化学机械抛光衬底的方法包括在抛光工位上抛光衬底上的层，在抛光站处用抛光工位进行抛光监测层，原位监测系统监测细长区域，并产生一个 计算所述细长区域的主轴与所述衬底的边缘的切线之间的角度，基于所述角度修改所测量的信号以产生修改的信号，以及至少一个检测抛光终点或修改 基于修改信号的抛光参数。

公开(公告)号：US10741459B2

公开(公告)日：2020-08-11

申请号：US16150009

申请日：2018-10-02

申请人： Applied Materials, Inc.

发明人： Wei Lu ,  Zhefu Wang ,  Zhihong Wang ,  Hassan G. Iravani ,  Dominic J. Benvegnu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Wen-Chiang Tu

IPC分类号： B24B37/013 ,  B24B37/04 ,  H01L21/66 ,  H01L21/321 ,  H01L21/32

摘要： In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

公开(公告)号：US10103073B2

公开(公告)日：2018-10-16

申请号：US15694632

申请日：2017-09-01

申请人： Applied Materials, Inc.

发明人： Wei Lu ,  Zhefu Wang ,  Zhihong Wang ,  Hassan G. Iravani ,  Dominic J. Benvegnu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Wen-Chiang Tu

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  B24B37/04

摘要： In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

公开(公告)号：US20180079052A1

公开(公告)日：2018-03-22

申请号：US15710533

申请日：2017-09-20

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Kevin Lin ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Tzu-Yu Liu

IPC分类号： B24B49/02 ,  B24B47/10

CPC分类号： B24B49/02 ,  B24B37/013 ,  B24B37/105 ,  B24B37/205 ,  B24B37/22 ,  B24B47/10 ,  B24B49/04

摘要： A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.

公开(公告)号：US09275917B2

公开(公告)日：2016-03-01

申请号：US14066509

申请日：2013-10-29

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC分类号： H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  B24B49/10

CPC分类号： H01L22/26 ,  B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L22/14

摘要： In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.

摘要翻译： 一方面，一种控制抛光的方法包括：在从第一基板或独立监视系统抛光第一基板之前，在第一基板上接收导电膜的初始厚度的测量，在一个或多个基板中抛光一个或多个基板 抛光系统，所述一个或多个衬底包括第一衬底，在一个或多个衬底的抛光期间，用涡流监视系统监测该一个或多个衬底以产生第一信号，确定第一信号的起始值 开始抛光第一衬底，对于在一个或多个衬底的至少一个衬底的抛光期间收集的第一信号的至少一部分，基于起始值和初始厚度的测量来确定增益，并且计算 基于第一信号和增益的第二信号。

公开(公告)号：US20150371913A1

公开(公告)日：2015-12-24

申请号：US14312503

申请日：2014-06-23

申请人： Applied Materials, Inc.

发明人： Wei Lu ,  Zhefu Wang ,  Zhihong Wang ,  Hassan G. Iravani ,  Dominic J. Benvegnu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Wen-Chiang Tu

IPC分类号： H01L21/66 ,  B24B37/013 ,  B24B37/04 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L22/26 ,  B24B37/013 ,  B24B37/04 ,  H01L21/3212 ,  H01L22/14

摘要： In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

摘要翻译： 在具有具有多个导电互连层的集成电路的制造中，抛光衬底层以提供集成电路的层。 衬底的层包括提供导电互连的导线。 衬底层包括在沟槽中由导电材料形成的闭合导电环路。 使用感应监测系统监测沟槽中导电材料的深度，并产生信号。 监测包括产生间歇地通过闭合导电回路的磁场。 从信号中提取随时间变化的值序列，表示导电材料随着时间的深度的值序列。