Abstract:
A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.
Abstract:
In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.
Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core positioned at least partially in the platen and a coil wound around a portion of the core. The core includes a back portion and a multiplicity of posts extending from the back portion in a first direction normal to the surface of the platen. The core and coil are configured such that the multiplicity of posts include a first plurality of posts to provide a first magnetic polarity and a second plurality of posts to provide an opposite second magnetic polarity, and the first plurality of posts and the second plurality of posts are arranged in an alternating pattern.
Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core positioned at least partially in the platen and a coil wound around a portion of the core. The core includes a back portion and a multiplicity of posts extending from the back portion in a first direction normal to the surface of the platen. The core and coil are configured such that the multiplicity of posts include a first plurality of posts to provide a first magnetic polarity and a second plurality of posts to provide an opposite second magnetic polarity, and the first plurality of posts and the second plurality of posts are arranged in an alternating pattern.
Abstract:
A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.
Abstract:
A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
Abstract:
A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.
Abstract:
A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
Abstract:
A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.
Abstract:
A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.