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    DIAMOND GRINDING WHEEL ADAPTED TO GRIND AND ABRADE STRATIFIED SOLID MATERIALS
    1.
    发明公开
    DIAMOND GRINDING WHEEL ADAPTED TO GRIND AND ABRADE STRATIFIED SOLID MATERIALS 审中-公开

    公开(公告)号：US20240278384A1

    公开(公告)日：2024-08-22

    申请号：US18571082

    申请日：2022-06-13

    申请人： DIAMANT S.R.L.

    发明人： Epifanio NUNZIATA

    IPC分类号： B24D5/12 ,  B24B49/14 ,  B24D5/06 ,  B24D5/10

    CPC分类号： B24D5/12 ,  B24B49/14 ,  B24D5/06 ,  B24D5/10

    摘要： Diamond grinding wheel, for grinding and abrasion of stratified solid materials including a cutting unit provided with a diamond crown and: a central tooth adapted to remove plastic material or similar materials, present on a sheet; holes adapted for cooling; cuts, based on the glass sheets and on the plastic material to be processed; external flange. The device is adapted to increase the quality of the sheets being processed once the grinding has terminated, rendering them polishable, lacking plastic material residues on the glasses; the dimensions of the device varying from a diameter and a height included between 30 mm and 400 mm; the grinding wheel including a base flange, and an external flange made of iron, aluminum and/or resin adapted to ensure a rigid structure for the entire device.

    Wafer Temperature Control System and Control Method, Computer Device, and Storage Medium
    2.
    发明公开
    Wafer Temperature Control System and Control Method, Computer Device, and Storage Medium 审中-公开

    公开(公告)号：US20240269797A1

    公开(公告)日：2024-08-15

    申请号：US18406371

    申请日：2024-01-08

    申请人： Shanghai Huali Integrated Circuit Corporation

    发明人： Qingqing Duan

    IPC分类号： B24B37/015 ,  B24B49/14

    CPC分类号： B24B37/015 ,  B24B49/14

    摘要： The present application provides a wafer temperature control system, including: a wafer polishing apparatus, a control module, an adjustment module, and a monitoring module. The wafer polishing device includes a polishing head having gas passages, a temperature of a wafer is adjusted by introducing a cooling gas into the gas passages. The monitoring module is configured to measure the temperature of the wafer in real time and send a generate temperature signal to the control module. The control module generates an adjustment signal used for adjusting a flow rate and introduction duration of the cooling gas. The adjustment module adjusts the flow rate and the introduction duration of the cooling gas introduced into the gas passages. According to the present application, the problem that the existing wafer cooling method cannot achieve a good cooling effect and thus leads to an impact on wafer polishing accuracy is solved.

    POLISHING METHOD AND POLISHING APPARATUS
    6.
    发明申请
    POLISHING METHOD AND POLISHING APPARATUS 审中-公开

    公开(公告)号：US20190118334A1

    公开(公告)日：2019-04-25

    申请号：US16226497

    申请日：2018-12-19

    申请人： EBARA CORPORATION

    发明人： Toru MARUYAMA ,  Hisanori MATSUO ,  Yasuyuki MOTOSHIMA

    IPC分类号： B24B37/015 ,  B24B55/02 ,  B24B49/14 ,  G01J5/02

    CPC分类号： B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  G01J5/025 ,  G01J2005/0085

    摘要： A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

    In-situ temperature control during chemical mechanical polishing with a condensed gas
    8.
    发明授权
    In-situ temperature control during chemical mechanical polishing with a condensed gas 有权

    公开(公告)号：US10058975B2

    公开(公告)日：2018-08-28

    申请号：US15410512

    申请日：2017-01-19

    申请人： Applied Materials, Inc.

    发明人： Brian J. Brown

    IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  B24B37/34 ,  B24C1/00

    CPC分类号： B24B37/015 ,  B24B37/107 ,  B24B37/34 ,  B24B49/14 ,  B24B53/017 ,  B24B55/02 ,  B24C1/003

    摘要： Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

    METHOD AND APPARATUS FOR POLISHING A SUBSTRATE
    9.
    发明申请
    METHOD AND APPARATUS FOR POLISHING A SUBSTRATE 审中-公开

    公开(公告)号：US20180222007A1

    公开(公告)日：2018-08-09

    申请号：US15946843

    申请日：2018-04-06

    申请人： EBARA CORPORATION

    发明人： Yasuyuki MOTOSHIMA ,  Toru MARUYAMA ,  Hisanori MATSUO

    IPC分类号： B24B37/015 ,  B24B53/017 ,  B24B49/14 ,  B24B55/02 ,  B24B37/34

    CPC分类号： B24B37/015 ,  B24B37/34 ,  B24B49/14 ,  B24B53/017 ,  B24B55/02

    摘要： A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit.

    Polishing method and polishing apparatus
    10.
    发明授权
    Polishing method and polishing apparatus 有权

    公开(公告)号：US10035238B2

    公开(公告)日：2018-07-31

    申请号：US15696926

    申请日：2017-09-06

    申请人： EBARA CORPORATION

    发明人： Toru Maruyama ,  Hisanori Matsuo ,  Yasuyuki Motoshima

    IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  G01J5/02 ,  G01J5/00

    CPC分类号： B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  G01J5/025 ,  G01J2005/0085

    摘要： A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.