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21.发明申请公开(公告)号：US20200066901A1
公开(公告)日：2020-02-27
申请号：US16430706
申请日：2019-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Luke DING , Zhanfeng CAO , Jingang FANG , Liangchen YAN , Ce ZHAO , Dongfang WANG
IPC: H01L29/786 , H01L29/66
Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
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22.发明申请公开(公告)号：US20230086999A1
公开(公告)日：2023-03-23
申请号：US17801003
申请日：2021-10-12
Inventor： Tongshang SU , Jun CHENG , Bin ZHOU , Ce ZHAO , Qinghe WANG , Jun WANG , Liangchen YAN
Abstract: Provided are a gate driving circuit and a manufacturing method therefor, an array substrate, and a display device, relating to the technical field of display. At least one transistor in the gate driving circuit comprises a first light-shielding layer made of an electrically conductive material, and the first light-shielding layer is connected to a first gate metal layer of the transistor, such that two electrically conductive channels are formed, and the ON-state current is increased, thereby effectively suppressing negative drift of a threshold voltage.
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公开(公告)号：US20220406822A1
公开(公告)日：2022-12-22
申请号：US17898761
申请日：2022-08-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US20210402753A1
公开(公告)日：2021-12-30
申请号：US16765056
申请日：2019-05-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Ce ZHAO
Abstract: A manufacturing method of a flexible electronic substrate and a substrate structure are disclosed. The manufacturing method includes: providing a first substrate comprising a first surface and a second surface which are opposite; forming a separation layer on the first surface of the first substrate, the separation layer being in a film form; providing a second substrate on the separation layer, the second substrate being configured as a flexible substrate; and processing the separation layer, such that at least a part of the separation layer is cracked from the film form, thereby separating the second substrate from the first substrate.
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公开(公告)号：US20210267053A1
公开(公告)日：2021-08-26
申请号：US17183909
申请日：2021-02-24
Inventor： Yongchao HUANG , Qinghe WANG , Haitao WANG , Jun LIU , Jun CHENG , Ce ZHAO , Liangchen YAN
Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.
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Patent Agency Ranking
公开(公告)号：US20210257428A1
公开(公告)日：2021-08-19
申请号：US16959114
申请日：2020-02-26
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Heekyu KIM , Ming WANG , Ning LIU , Yingbin HU
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.
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公开(公告)号：US20200273995A1
公开(公告)日：2020-08-27
申请号：US16706160
申请日：2019-12-06
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Jun LIU , Yingbin HU , Wei LI , Liusong NI
IPC: H01L29/786 , H01L27/12
Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
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公开(公告)号：US20200209921A1
公开(公告)日：2020-07-02
申请号：US15752451
申请日：2017-08-03
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yuankui DING , Guangcai YUAN , Ce ZHAO
Abstract: A flexible display panel and a film-like structure are provided according to the present disclosure. The flexible display panel includes a flexible display structure and a film-like structure arranged on at least one side of the flexible display structure. The film-like structure includes: a first flexible layer, a second flexible layer, a filler sealed between the first flexible layer and the second flexible layer, and a heater configured to heat the filler. A hardness of the filler varies with a temperature of the filler.
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公开(公告)号：US20200168687A1
公开(公告)日：2020-05-28
申请号：US16441422
申请日：2019-06-14
Inventor： Yingbin HU , Liangchen YAN , Ce ZHAO , Yuankui DING , Yang ZHANG , Yongchao HUANG , Luke DING , Jun LIU
Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
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公开(公告)号：US20190371867A1
公开(公告)日：2019-12-05
申请号：US16488924
申请日：2019-01-31
Inventor： Yongchao HUANG , Dongfang WANG , Jun CHENG , Min HE , Bin ZHOU , Ce ZHAO
Abstract: A display panel, a method for manufacturing the display panel, and a display apparatus are provided. The display panel includes a base substrate; a thin film transistor; an OLED structure formed on the thin film transistor including a first and second electrodes arranged opposite to each other and an organic light emitting layer arranged between the first and second electrodes; a light shielding layer arranged between the first electrode and the organic light emitting layer. The light shielding layer includes a first and a second light shielding layers. The first light shielding layer includes a first light shielding portion and a first opening portion corresponding to a pixel area. The second light shielding layer includes a second light shielding portion and a second opening portion corresponding to a pixel area. The second light shielding portion includes a first and second parts.
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