公开(公告)号：US20230157132A1

公开(公告)日：2023-05-18

申请号：US17625712

申请日：2021-01-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei He ,  Xiang Li ,  Haowei Zou ,  Sheng Xu ,  Lizhen Zhang ,  Shipei Li ,  Huili Wu

IPC: H10K59/80 ,  H10K59/122 ,  H10K59/121 ,  G02B30/26

CPC classification number: H10K59/80515 ,  H10K59/122 ,  H10K59/1213 ,  H10K59/1216 ,  G02B30/26 ,  H10K59/878

Abstract: Provided are an organic light-emitting display substrate, a manufacturing method thereof and a display device. The display substrate includes a base substrate, a metal reflection layer and multiple pixels. Each pixel includes multiple sub-anodes. The metal reflection layer is between the base substrate and a layer where the multiple sub-anodes are located. The metal reflection layer is insulated from the layer where the sub-anodes are located, the metal reflection layer includes multiple metal reflection patterns separated from each other, and each metal reflection pattern corresponds to one pixel. An orthographic projection of each metal reflection pattern onto the base substrate overlaps with orthographic projections of the multiple sub-anodes of the corresponding pixel onto the base substrate. The sub-anodes of each pixel are arranged at intervals, and a distance between orthographic projections of two adjacent sub-anodes onto the base substrate is less than or equal to a first preset threshold.

公开(公告)号：US20220123178A1

公开(公告)日：2022-04-21

申请号：US17308285

申请日：2021-05-05

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shipei Li ,  Ying Zhao ,  Wei He ,  Zhiwei Liang

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/00

Abstract: A light emitting base plate and a fabricating method thereof, and a displaying device. In the present disclosure, a light shielding layer is provided on a substrate, a driving functional layer is provided on the light shielding layer, and a light-emitting-device layer and a light absorbing layer are provided on the driving functional layer; the light-emitting-device layer includes a plurality of light emitting devices, and the light absorbing layer includes light absorbing structures each of which surrounds sides of one of the light emitting devices; and the light absorbing structures are configured for blocking light rays exiting from the sides of the light emitting devices.

公开(公告)号：US20200091246A1

公开(公告)日：2020-03-19

申请号：US16574055

申请日：2019-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shipei Li ,  Wusheng Li ,  Qi Yao ,  Dongsheng Li ,  Fang He ,  Huili Wu ,  Renquan Gu ,  Sheng Xu ,  Wei He ,  Dongsheng Yin ,  Ying Zhao

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

Abstract: A photosensitive sensor and a method of manufacturing the photosensitive sensor are disclosed. The photosensitive sensor includes a thin film transistor and a photosensitive element on a substrate, wherein the photosensitive element includes a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode. The second electrode is connected to a drain electrode of the thin film transistor. An orthographic projection of an active layer of the thin film transistor on the substrate is within an orthographic projection of the second electrode on the substrate. The second electrode includes at least two stacked conductive layers, at least one of the at least two stacked conductive layers being a light shielding metal layer.

公开(公告)号：US20190027499A1

公开(公告)日：2019-01-24

申请号：US15921964

申请日：2018-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Huili Wu ,  Jianming Sun ,  Shipei Li ,  Xiaolong He

IPC: H01L27/12 ,  G06F3/041 ,  G02F1/133 ,  H01L31/105

CPC classification number: H01L27/124 ,  G02F1/13306 ,  G02F2001/13312 ,  G06F3/0416 ,  G06K9/0004 ,  G09G2360/148 ,  H01L27/3269 ,  H01L31/105

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.