DISPLAY SUBSTRATE, ADJUSTMENT METHOD THEREOF, AND DISPLAY APPARATUS

    公开(公告)号:US20210225975A1

    公开(公告)日:2021-07-22

    申请号:US16765232

    申请日:2019-11-26

    Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

    Mask
    5.
    发明授权
    Mask 有权
    面具

    公开(公告)号:US09158193B2

    公开(公告)日:2015-10-13

    申请号:US14357650

    申请日:2013-04-12

    Inventor: Wusheng Li

    CPC classification number: G03F1/38 G03F1/00 G03F1/36

    Abstract: A mask is disclosed. The mask includes a light-blocking region and a slit-like light-transmitting region. The slit includes two edges that are disposed oppositely to each other, and each of the edges is made up of a plurality of arcs.

    Abstract translation: 公开了一种掩模。 掩模包括遮光区域和狭缝状透光区域。 狭缝包括彼此相对设置的两个边缘,并且每个边缘由多个弧形构成。

    Display substrate, adjustment method thereof, and display apparatus

    公开(公告)号:US11276739B2

    公开(公告)日:2022-03-15

    申请号:US16765232

    申请日:2019-11-26

    Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.

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