公开(公告)号：US06214630B1

公开(公告)日：2001-04-10

申请号：US09471059

申请日：1999-12-22

Applicant: Min-Chih Hsuan ,  Taisheng Feng ,  Charlie Han

Inventor： Min-Chih Hsuan ,  Taisheng Feng ,  Charlie Han

IPC: H01L2100

CPC classification number: H01L22/22 ,  G01R31/318505 ,  G01R31/318511 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer level IC structure and a method of manufacturing this wafer level IC structure are proposed, which can help increase the yield of the IC manufacture. The wafer level IC structure is constructed on a semiconductor wafer which is defined into a plurality of discrete IC blocks on the wafer, each IC block being used to form a plurality of IC components such as memory cells. A multi-layer interconnect structure is formed to electrically interconnect these IC components in each of the IC blocks. A first testing and repair process is then perform to disconnect any inoperative IC components from active use. This completes the fabrication stage of the manufacture process. In the subsequent packaging stage, a redistribution line structure is formed to interconnect the discrete IC blocks into an integral functional unit. A second testing and repair process is then perform to disconnect any inoperative IC blocks from active use. The overall IC manufacture would have an increased yield as compared to the prior art.

Abstract translation: 提出了晶片级IC结构和制造该晶片级IC结构的方法，这有助于提高IC制造的成品率。 晶片级IC结构构造在半导体晶片上，半导体晶片被限定在晶片上的多个分立IC块中，每个IC块用于形成诸如存储单元的多个IC部件。 形成多层互连结构以将每个IC块中的这些IC部件电连接。 然后执行第一个测试和修复过程，以断开任何不起作用的IC组件的主动使用。 这完成了制造过程的制造阶段。 在随后的封装阶段中，形成再分配线结构以将分立IC块互连成为一体的功能单元。 然后执行第二个测试和修复过程以断开任何不工作的IC块与主动使用。 与现有技术相比，整体IC制造将具有增加的产量。

公开(公告)号：US5875136A

公开(公告)日：1999-02-23

申请号：US907642

申请日：1997-08-11

Applicant: Min-Chih Hsuan ,  Jerry Jaw ,  Charlie Han

Inventor： Min-Chih Hsuan ,  Jerry Jaw ,  Charlie Han

IPC: G11C5/06

CPC classification number: G11C29/81 ,  G11C29/808 ,  G11C29/816 ,  G11C5/04

Abstract: A repairable memory module, such as a DRAM (dynamic random access memory) or a flash memory module, and a method of repairing memory modules are proposed. Based on the repairable memory module, any failed memory ICs in the module that are found before shipment or after use can be repaired through the use of a backup memory IC. Fundamentally, when any failed memory ICs are found in the module, a set of zero-ohm resistors are used to short-circuit a number of selected pairs of jumping pads to thereby redirect the connections to the I/O (input/output) and column-address strobe pins on the failed memory IC instead to the same nominal pins on the backup memory IC. This allows the function of the failed ICs to be instead performed by the backup memory chip.

Abstract translation: 提出了诸如DRAM（动态随机存取存储器）或闪速存储器模块的可修复存储器模块以及修复存储器模块的方法。 基于可修复的存储器模块，可以通过使用备用存储器IC来修复在发货之前或使用后发现的模块中的任何故障存储器IC。 基本上，当在模块中发现任何失败的存储器IC时，使用一组零欧姆电阻器来使多个选定跳跃焊盘对短路，从而将连接重定向到I / O（输入/输出）和 故障存储器IC上的列地址选通引脚替代为备用存储器IC上的相同标称引脚。 这允许由备用存储器芯片替代执行故障IC的功能。