公开(公告)号：US20070278682A1

公开(公告)日：2007-12-06

申请号：US11509498

申请日：2006-08-24

申请人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

发明人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An interconnect structure of an integrated circuit includes a low-k dielectric layer over a semiconductor substrate, a conductor in the low-k dielectric layer, and a dielectric transition layer between the low-k dielectric layer and the conductor, wherein the dielectric transition layer has a thickness of less than about 50 Å.

摘要翻译： 集成电路的互连结构包括半导体衬底上的低k电介质层，低k电介质层中的导体和低k电介质层与导体之间的介电过渡层，其中介电转移层 具有小于约50埃的厚度。

公开(公告)号：US08846528B2

公开(公告)日：2014-09-30

申请号：US13306340

申请日：2011-11-29

申请人： Joung-Wei Liou ,  Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin

发明人： Joung-Wei Liou ,  Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76828

摘要： A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is reduced by at least one of: (a) applying thermal energy to the layer to cause the layer temperature to be between 100 C and 400 C; (b) irradiating the layer with electromagnetic energy; and/or (c) irradiating the layer with free ions.

摘要翻译： 具有蚀刻在其上的特征和低介电常数并且由半导体衬底承载的电介质层。 蚀刻的介电层被改性，使得其表面能量通过以下至少一个来降低：（a）向该层施加热能以使层温度在100℃和400℃之间; （b）用电磁能照射该层; 和/或（c）用游离离子照射该层。

公开(公告)号：US07968451B2

公开(公告)日：2011-06-28

申请号：US12509039

申请日：2009-07-24

申请人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

发明人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

IPC分类号： H01L21/4763

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating an integrated circuit comprises forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, and treating the low-k dielectric layer with a gaseous organic chemical to cause a reaction between the low-k dielectric layer and the gaseous organic chemical. The gaseous organic chemical is free from silicon.

摘要翻译： 一种用于制造集成电路的方法包括在半导体衬底上形成低k电介质层，蚀刻低k电介质层以形成开口，并且用气体有机化学品处理低k电介质层以引起第 低k电介质层和气态有机化学品。 气态有机化学物质不含硅。

公开(公告)号：US20090286394A1

公开(公告)日：2009-11-19

申请号：US12509039

申请日：2009-07-24

申请人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

发明人： Chung-Chi Ko ,  Chia-Cheng Chou ,  Keng-Chu Lin ,  Tien-I Bao ,  Chen-Hua Yu

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating an integrated circuit comprises forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, and treating the low-k dielectric layer with a gaseous organic chemical to cause a reaction between the low-k dielectric layer and the gaseous organic chemical. The gaseous organic chemical is free from silicon.

摘要翻译： 一种用于制造集成电路的方法包括在半导体衬底上形成低k电介质层，蚀刻低k电介质层以形成开口，并且用气体有机化学品处理低k电介质层以引起第 低k电介质层和气态有机化学品。 气态有机化学物质不含硅。

公开(公告)号：US20070243720A1

公开(公告)日：2007-10-18

申请号：US11404020

申请日：2006-04-14

申请人： Chung-Chi Ko ,  Keng-Chu Lin ,  Tien-I Bao

发明人： Chung-Chi Ko ,  Keng-Chu Lin ,  Tien-I Bao

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825

摘要： An UV treatment for making a low-k dielectric layer having improved properties in a damascene structure. A low-k dielectric layer in a damascene structure is subjected to an UV treatment with He gas or H2 gas to eliminate etching damage to the exposed surfaces of the low-k dielectric layer.

摘要翻译： 用于制造具有改进的镶嵌结构性能的低k电介质层的UV处理。 用Ho气体或H 2 O 2气体对镶嵌结构中的低k电介质层进行UV处理，以消除对低k电介质层的暴露表面的蚀刻损伤。

公开(公告)号：US20070015355A1

公开(公告)日：2007-01-18

申请号：US11179265

申请日：2005-07-12

申请人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

发明人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

IPC分类号： H01L21/469

CPC分类号： H01L21/76834 ,  H01L21/76825

摘要： A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.

摘要翻译： 一种形成互连结构的方法。 衬底上设置有低k电介质层。 然后在低k电介质层中形成至少一个导电特征。 形成覆盖低k电介质层的覆盖层，然后使导电特征和低k电介质层经受能量源以降低其介电常数。

公开(公告)号：US09130017B2

公开(公告)日：2015-09-08

申请号：US13220245

申请日：2011-08-29

申请人： Po-Cheng Shih ,  Chung-Chi Ko ,  Keng-Chu Lin

发明人： Po-Cheng Shih ,  Chung-Chi Ko ,  Keng-Chu Lin

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/76811 ,  H01L21/02167 ,  H01L21/02271 ,  H01L21/31144 ,  H01L21/76813

摘要： A method includes forming a hard mask over a low-k dielectric layer, and patterning the hard mask to form an opening. A stress tuning layer is formed over the low-k dielectric layer and in physical contact with the hard mask. The stress tuning layer has an inherent stress, wherein the inherent stress is a near-zero stress or a tensile stress. The low-k dielectric layer is etched to form a trench aligned to the opening, wherein the step of etching is performed using the hard mask as an etching mask.

摘要翻译： 一种方法包括在低k电介质层上形成硬掩模，并对硬掩模进行图案化以形成开口。 应力调整层形成在低k电介质层上并与硬掩模物理接触。 应力调整层具有固有应力，其中固有应力为近零应力或拉伸应力。 蚀刻低k电介质层以形成与开口对准的沟槽，其中使用硬掩模作为蚀刻掩模进行蚀刻步骤。

公开(公告)号：US08536064B2

公开(公告)日：2013-09-17

申请号：US12701927

申请日：2010-02-08

申请人： Chung-Chi Ko ,  Chih-Hao Chen ,  Keng-Chu Lin

发明人： Chung-Chi Ko ,  Chih-Hao Chen ,  Keng-Chu Lin

IPC分类号： H01L21/302

CPC分类号： H01L21/31105 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832

摘要： A method of lithography patterning includes forming a first etch stop layer, a second etch stop layer, and a hard mask layer on a material layer. The materials of the first etch stop layer and the second etch stop layer are selected by the way that there is a material gradient composition between the second etch stop layer, the first etch stop layer, and the material layer. Hence, gradient etching rates between the second etch stop layer, the first etch stop layer, and the material layer are achieved in an etching process to form etched patterns with smooth and/or vertical sidewalls within the second and the first etch stop layers and the material layer.

公开(公告)号：US07429542B2

公开(公告)日：2008-09-30

申请号：US11404020

申请日：2006-04-14

申请人： Chung-Chi Ko ,  Keng-Chu Lin ,  Tien-I Bao

发明人： Chung-Chi Ko ,  Keng-Chu Lin ,  Tien-I Bao

IPC分类号： H01L21/26

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825

摘要： An UV treatment for making a low-k dielectric layer having improved properties in a damascene structure. A low-k dielectric layer in a damascene structure is subjected to an UV treatment with He gas or H2 gas to eliminate etching damage to the exposed surfaces of the low-k dielectric layer.

摘要翻译： 用于制造具有改进的镶嵌结构性能的低k电介质层的UV处理。 用Ho气体或H 2 O 2气体对镶嵌结构中的低k电介质层进行UV处理，以消除对低k电介质层的暴露表面的蚀刻损伤。

公开(公告)号：US07410895B2

公开(公告)日：2008-08-12

申请号：US11179265

申请日：2005-07-12

申请人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

发明人： Keng-Chu Lin ,  Chung-Chi Ko ,  Yi-Chi Liao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/76825

摘要： A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.

摘要翻译： 一种形成互连结构的方法。 衬底上设置有低k电介质层。 然后在低k电介质层中形成至少一个导电特征。 形成覆盖低k电介质层的覆盖层，然后使导电特征和低k电介质层经受能量源以降低其介电常数。