Substrate heating apparatus and manufacturing method for the same
    21.
    发明申请
    Substrate heating apparatus and manufacturing method for the same 有权
    基板加热装置及其制造方法

    公开(公告)号:US20060011610A1

    公开(公告)日:2006-01-19

    申请号:US11149080

    申请日:2005-06-09

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67103 H05B3/143

    摘要: A substrate heating apparatus comprises a ceramic base including a heating surface on which a substrate is placed, and a resistance heating element buried in the ceramic base, wherein the heating surface is a concave which a central part is the lowest point and a peripheral part is the highest point.

    摘要翻译: 一种基板加热装置,包括:陶瓷基体,其包括放置基板的加热面和埋在陶瓷基体中的电阻加热元件,其中,加热面为中心部为最低点的凹部,周边部为 最高点。

    Substrate heating device
    22.
    发明申请
    Substrate heating device 有权
    基板加热装置

    公开(公告)号:US20050258160A1

    公开(公告)日:2005-11-24

    申请号:US11102462

    申请日:2005-04-08

    CPC分类号: H01L21/67103

    摘要: A substrate heating device comprises a ceramic base plate having a heating surface on which a substrate is placed, resistance heating elements buried in the ceramic base plate for respective zones into which the heating surface is divided, terminals connected to the resistance heating elements respectively, and lead wires connected to the terminals respectively and wired on an outer surface of the ceramic base plate other than the heating surface.

    摘要翻译: 基板加热装置包括:陶瓷基板,其具有放置基板的加热面,电阻加热元件,其埋置在陶瓷基板中,用于分别加热面的各个区域,分别与电阻加热元件连接的端子;以及 引线分别连接到端子并且接合在除了加热表面之外的陶瓷基板的外表面上。

    ELECTROSTATIC CHUCK
    24.
    发明申请
    ELECTROSTATIC CHUCK 有权
    静电卡

    公开(公告)号:US20070223175A1

    公开(公告)日:2007-09-27

    申请号:US11687824

    申请日:2007-03-19

    IPC分类号: H01L21/683

    CPC分类号: H01L21/6831

    摘要: An electrostatic chuck includes a ceramic base having an electrode embedded in vicinity to a holding face for holding a substrate. On a back side of this ceramic base, provided are a terminal connected to the electrode, a wafer temperature control member, and an insulating member for insulating the temperature control member from the terminal. This insulating member has a flange portion on its end portion in contact with the ceramic base, and is made of highly thermal conductive ceramics.

    摘要翻译: 静电吸盘包括具有嵌入到用于保持基板的保持面附近的电极的陶瓷基体。 在该陶瓷基体的背面设置有与电极连接的端子,晶片温度控制部件以及用于将温度控制部件与端子绝缘的绝缘部件。 该绝缘构件在其与陶瓷基体接触的端部具有凸缘部,并且由高导热性陶瓷制成。

    Substrate heating apparatus
    25.
    发明授权
    Substrate heating apparatus 有权
    基板加热装置

    公开(公告)号:US07247819B2

    公开(公告)日:2007-07-24

    申请号:US11159820

    申请日:2005-06-23

    IPC分类号: H05B3/68 H05B3/08

    CPC分类号: H01L21/67103 H05B3/143

    摘要: A substrate heating apparatus is provided, including a base group including a plurality of bases, which are arranged substantially into a plate with a gap interposed between the bases, and which form a substrate mounting surface. A resistance heating element provided for at least one of the bases.

    摘要翻译: 提供了一种基板加热装置,其包括基本上包括多个基座的基体,该基部基本上被布置在板之间,间隙插入在基板之间,并且形成基板安装表面。 设置在至少一个基座上的电阻加热元件。

    Substrate heating apparatus and manufacturing method for the same
    26.
    发明授权
    Substrate heating apparatus and manufacturing method for the same 有权
    基板加热装置及其制造方法

    公开(公告)号:US07247818B2

    公开(公告)日:2007-07-24

    申请号:US11149080

    申请日:2005-06-09

    IPC分类号: H05B3/68 C23C16/00

    CPC分类号: H01L21/67103 H05B3/143

    摘要: A substrate heating apparatus includes a ceramic base having a concave heating surface on which a substrate is placed, and a resistance heating element buried in the ceramic base. The central part of the concave heating surface defines the lowest point of the heating surface and the peripheral part of the concave heating surface defines the highest point of the heating surface.

    摘要翻译: 基板加热装置包括:陶瓷基体,其具有放置基板的凹面加热面,以及埋在陶瓷基体中的电阻加热元件。 凹面加热面的中心部分限定了加热面的最低点,凹面加热面的周边部分限定了加热面的最高点。

    Systems for producing semiconductors and members therefor
    27.
    发明授权
    Systems for producing semiconductors and members therefor 有权
    半导体制造系统及其成员

    公开(公告)号:US07220320B2

    公开(公告)日:2007-05-22

    申请号:US10753625

    申请日:2004-01-08

    IPC分类号: H01L21/00 C23C16/00 C23C14/00

    摘要: The present invention provides members that are provided around a susceptor for mounting a semiconductor in a chamber for a semiconductor production system. Each member has a function of independently generating heat to heat the semiconductor, at least by radiation, and preferably, a heat generating element is embedded in each member.

    摘要翻译: 本发明提供了一种用于将半导体安装在用于半导体生产系统的腔室中的基座周围的构件。 每个构件至少通过辐射具有独立产生热量以加热半导体的功能,并且优选地,每个构件中嵌入发热元件。

    Substrate heater and fabrication method for the same
    29.
    发明申请
    Substrate heater and fabrication method for the same 有权
    基板加热器及其制造方法相同

    公开(公告)号:US20050082274A1

    公开(公告)日:2005-04-21

    申请号:US10945269

    申请日:2004-09-20

    CPC分类号: H05B3/143

    摘要: The substrate heater includes a plate-shaped ceramics base having a heating surface on a side of the ceramic base for placing a substrate thereon. The substrate heater includes a resistance-heating element embedded in the ceramics base. The substrate heater includes a tubular member joined to a central portion on another side of the ceramics substrate. The heating surface has a convex shape having a central portion and a peripheral portion. The heating surface in a convex shape lowers in height as the heating surface extends from a central portion to a peripheral portion thereof.

    摘要翻译: 基板加热器包括板状陶瓷基体,该基板在陶瓷基体的一侧上具有用于在其上放置基板的加热表面。 基板加热器包括嵌入在陶瓷基体中的电阻加热元件。 基板加热器包括连接到陶瓷基板的另一侧的中心部分的管状部件。 加热面具有中央部和周缘部的凸状。 当加热表面从中心部分延伸到其周边部分时,凸形的加热表面的高度降低。

    Electrostatic chuck and substrate processing apparatus
    30.
    发明授权
    Electrostatic chuck and substrate processing apparatus 有权
    静电吸盘和基板处理装置

    公开(公告)号:US06785115B2

    公开(公告)日:2004-08-31

    申请号:US10057804

    申请日:2002-01-25

    IPC分类号: H02N2300

    摘要: An electrostatic chuck is provided, having an insulation layer including a mount plane on which a wafer is mounted, an inner electrode provided in the insulation layer, and projecting portions protruding from the mount plane which include contact planes that contact the wafer. A backside gas flows into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain the temperature uniformity of the wafer. The total areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to the area of the inner electrode, and the heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

    摘要翻译: 提供一种静电卡盘,其具有包括安装有晶片的安装平面的绝缘层,设置在绝缘层中的内部电极以及从安装面突出的突出部,该突出部包括与晶片接触的接触面。 背面气体在晶片被吸引到安装平面的条件下流入由安装平面,突出部分和晶片限定的空间中,以保持晶片的温度均匀性。 突出部的接触面的总面积相对于内部电极的面积为5%以上且10%以下,突出部的高度为5μm以上且不大于 10个妈妈