公开(公告)号：US06521894B1

公开(公告)日：2003-02-18

申请号：US09437903

申请日：1999-11-09

申请人： Jan S. Iwanczyk ,  Bradley E. Patt

发明人： Jan S. Iwanczyk ,  Bradley E. Patt

IPC分类号： G01T120

CPC分类号： G01T1/2018 ,  G01T1/2928

摘要： Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.

摘要翻译： 根据本发明的一个实施例的辐射检测器使用与半导体漂移光电检测器结合的闪烁体实现，其中组件根据它们的几何形状，尺寸和布置被特别地构造，使得光电探测器对中的闪烁体衰减时间和漂移时间相匹配 以达到更高的信噪比。 检测器可以包括用于放大由硅漂移光电检测器产生的电信号的电子装置，该扩增具有相对于闪烁体的衰减时间优化的成形时间和信号在硅漂移光电探测器中的时间扩展，以使 信号到电子噪声。

公开(公告)号：US06455858B1

公开(公告)日：2002-09-24

申请号：US09638738

申请日：2000-08-13

申请人： Bradley E. Patt ,  Jan S. Iwanczyk ,  Carolyn R. Tull ,  Gintas Vilkelis

发明人： Bradley E. Patt ,  Jan S. Iwanczyk ,  Carolyn R. Tull ,  Gintas Vilkelis

IPC分类号： H01L2714

CPC分类号： H01L27/1443 ,  H01L27/14676 ,  H01L31/115 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

摘要翻译： 提供半导体辐射检测器来检测x射线和光子。 入口电极通过使用可变掺杂浓度进行分段。 此外，通过在p +区域之间插入n +区域来物理地分割入口电极。 p +区域和n +区域被单独偏置。 检测器元件可以用于阵列中，并且通过在单个点施加电位可以对p +区域和n +区域进行偏置。 半导体辐射检测器的背面具有用于收集所产生的电荷的n +阳极和多个p +阴极。 偏置的n +插入件可以放置在p +阴极之间，并且内部电阻分压器可用于偏置n +插入件以及p +阴极。 可以围绕入口电极的有源区域或围绕入口电极阵列来实现多晶硅螺旋保护。

公开(公告)号：US5773829A

公开(公告)日：1998-06-30

申请号：US743320

申请日：1996-11-05

申请人： Jan S. Iwanczyk ,  Bradley E. Patt

发明人： Jan S. Iwanczyk ,  Bradley E. Patt

IPC分类号： G01T1/00 ,  G01T1/164 ,  G01T1/20 ,  G01T1/202 ,  G01T1/29

CPC分类号： G01T1/2985 ,  G01T1/1644 ,  G01T1/2018 ,  A61B6/4258

摘要： An imaging detector includes a collimator, a scintillator and a photodiode array. The collimator directs radiation to scintillator segments having apertures substantially matched to collimator apertures. Optical reflectors and heavy metal septa between the segments reduce light and radiation scatter between the segments, respectively. Photodiode array elements with active areas substantially matched to the scintillator segment apertures detect light generated when the radiation interacts with the scintillator. A cooler, a low noise photodiode array and readout electronics improve the signal-to-noise ratio of the imaging system in specific embodiments.

摘要翻译： 成像检测器包括准直器，闪烁体和光电二极管阵列。 准直器将辐射引导到具有与准直器孔径基本匹配的孔的闪烁器段。 分段之间的光反射器和重金属间隔分别减少了光束和光束之间的辐射散射。 具有与闪烁体段孔径基本匹配的有源区域的光电二极管阵列元件检测当辐射与闪烁体相互作用时产生的光。 在特定实施例中，冷却器，低噪声光电二极管阵列和读出电路提高成像系统的信噪比。