公开(公告)号：US20170317296A1

公开(公告)日：2017-11-02

申请号：US15648463

申请日：2017-07-13

Applicant: FUJIFILM CORPORATION

Inventor： Yosuke YAMAMOTO ,  Yushi HONGO ,  Kensuke MASUI

IPC: H01L51/00 ,  C09D11/03 ,  C09D11/52 ,  C09D11/38 ,  C09D11/36 ,  C09D11/102 ,  C09D11/033

CPC classification number: H01L51/0074 ,  C07D495/22 ,  C09D11/03 ,  C09D11/033 ,  C09D11/102 ,  C09D11/36 ,  C09D11/38 ,  C09D11/52 ,  H01L29/786 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0094 ,  H01L51/05

Abstract: An object of the present invention is to provide an organic semiconductor composition, which makes it possible to obtain an organic semiconductor film having high mobility and being excellent in film uniformity and heat resistance, and a method for manufacturing an organic semiconductor element.The organic semiconductor composition of the present invention contains an organic semiconductor as Component A and an organic solvent, which is represented by Formula B-1 and has a melting point of equal to or lower than 25° C. and a boiling point of equal to or higher than 150° C. and equal to or lower than 280° C., as Component B, in which an ionization potential of Component A is equal to or higher than 5.1 eV. In the formula, X represents O, S, S═O, O═S═O, or NR, Y1 to Y4 each independently represent NR1 or CR10R11, R, R1, R10, and R11 each independently represent a hydrogen atom or a substituent, and n represents 1 or 2.

公开(公告)号：US20160351830A1

公开(公告)日：2016-12-01

申请号：US15234365

申请日：2016-08-11

Applicant: FUJIFILM CORPORATION

Inventor： Naoyuki HANAKI ,  Yosuke YAMAMOTO ,  Daigo SAWAKI

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42

CPC classification number: H01L51/0072 ,  H01L27/301 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/0094 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/4273

Abstract: An object of the present invention is to provide a photoelectric conversion element which exhibits excellent heat resistance and responsiveness, and a photosensor and an imaging device which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes: a transparent conductive film; a conductive film; and a photoelectric conversion film and an electron blocking layer which are disposed between the transparent conductive film and the conductive film, wherein the electron blocking layer contains a compound represented by the following Formula (1).

Abstract translation: 本发明的目的是提供一种显示出优异的耐热性和响应性的光电转换元件，以及包括光电转换元件的光学传感器和图像拾取元件。 该光电转换元件包括设置在透明导电膜和导电膜之间的透明导电膜，导电膜，光电转换膜和电子阻挡层。 电子阻挡膜含有式（1）表示的化合物。

公开(公告)号：US20160149144A1

公开(公告)日：2016-05-26

申请号：US15012203

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Yosuke YAMAMOTO ,  Masaaki TSUKASE ,  Tomoaki YOSHIOKA ,  Naoyuki HANAKI ,  Takahiko ICHIKI ,  Daigo SAWAKI

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  C07D221/18 ,  C07D257/12 ,  C09B17/00 ,  C09B19/00 ,  C09B57/00 ,  C09B57/001 ,  C09B57/008 ,  C09B57/08 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/42 ,  H01L51/442 ,  Y02E10/549

Abstract: An object of the invention is to provide: a photoelectric conversion material which has excellent deposition stability such that when the photoelectric conversion material is used in a photoelectric conversion element, the change in the performance of the element due to variations in the concentration of the photoelectric conversion material is small; a photoelectric conversion element using the photoelectric conversion material; and an optical sensor and an imaging element including the photoelectric conversion element. The photoelectric conversion material of the invention is a compound (A) expressed by the following Formula (1).

Abstract translation: 本发明的目的是提供一种光电转换材料，其具有优异的沉积稳定性，使得当在光电转换元件中使用光电转换材料时，由于光电转换元件的浓度变化导致元件性能的变化 转换材料小; 使用光电转换材料的光电转换元件; 以及包括光电转换元件的光学传感器和摄像元件。 本发明的光电转换材料是由下式（1）表示的化合物（A）。