摘要:
A biosensor for detecting an antigen using an antigen/antibody coupling includes: a silicon substrate, at least one interdigital electrode pair structure that is located on the silicon substrate, the electrode pair being interspaced at a maximum distance of 1.0 μm; a counter-electrode on the silicon substrate; a reference electrode; a first layer of protein, covering at least the interdigital electrode structure; a selective second protein layer applied to the first layer and containing a capture antibody selected specifically with respect to the antigen of interest and to which the antigen can be coupled. A sensor signal can be read on the interdigital electrode structure, if the antigen is coupled to the capture antibody by way of a sample to be analyzed that comes into contact with the biosensor and a redox reactive molecule is enzymatically released on the sensor surface by an enzyme-marked detection antibody likewise coupled to the antigen.
摘要:
An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.
摘要:
An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.
摘要:
A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要:
A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
摘要:
A gas sensor array for detecting individual gas constituents in a gas sensor, said array being composed of a carrier member of a non-conductive substrate having a plurality of individual sensor elements formed by semiconductor oxides being applied thereon in a planar arrangement and the array is provided with contact electrode arrangements for measuring electrical conductivity, with a heating arrangement for heating a predetermined operating temperature and with protective sheaths for protecting the arrangement against external influences along with a fastening base so that the individual operating temperatures allocated to the various sensors and wherein the differences between respective sensor signals are formed for detecting the individual gas constituents, with these differences being supplied to a processing unit. In a preferred embodiment, at least one part of the individual sensor element is composed of a &bgr;-Ga2O3 thin film.
摘要翻译:一种用于检测气体传感器中的各种气体成分的气体传感器阵列,所述阵列由非导电基底的载体构件组成,所述非导电基底具有以半导体氧化物形成的多个单独的传感器元件,所述多个传感器元件以平面布置施加在其上, 设置有用于测量导电性的接触电极装置,具有用于加热预定工作温度的加热装置和用于保护装置与保护基座一起保护装置免受外部影响的加热装置,使得分配给各种传感器的各个操作温度,并且其中 形成各个传感器信号之间的差异,用于检测各个气体成分,这些差异被提供给处理单元。 在优选实施例中,单个传感器元件的至少一部分由β-Ga 2 O 3薄膜构成。
摘要:
A gas sensor and method for manufacturing a gas sensor is provided. In order to increase the selectivity and the sensitivity to a gas to be measured, a gas-sensitive gallium oxide layer of a gas sensor is coated with a filter layer that comprises silicon dioxide. In an alternative embodiment, the gallium oxide layer can be coated with a gas-sensitive metal oxide layer made of titanium oxide, aluminum vanadate, tungsten oxide or tantalum oxide.
摘要:
A sensor has a temperature in a range from 700.degree. to 850.degree. C. for detecting methane, and an oxygen-sensitive semiconducting metal oxide. A method for operating a gas sensor having two electrodes, an oxygen-sensitive semiconducting metal oxide conductively connecting the electrodes to one another, and a heating element, includes heating the metal oxide to a constant temperature in a range from 700.degree. to 850.degree. C., and measuring the resistance, conductivity or relative permeability of the metal oxide.
摘要:
A method and apparatus for detecting methane in a gas mixture that may contain commonly used solvents including alcohols and acetones is provided which measures a change in electrical resistivity, electrical conductivity or relative permeability caused by the presence of methane gas at a chemically active sensing structure. The apparatus includes two spaced-apart electrodes that are covered with a thin methane-sensitive semi-conductive metal oxide layer. The gas to be tested is heated to a temperature exceeding 740.degree. C. before it contacts the metal oxide layer. Alcohols, acetones and other solvents are oxidized to electrical carbon dioxide and water before they reach the metal oxide layer so that only the less reactive and reducing gas methane reaches the metal oxide layer where it is reduced and increases the conductivity of the metal oxide layer as measured between the two spaced-apart electrodes with an appropriate electrical meter instrument.
摘要:
The invention relates to an intelligent color system that recognizes the ambient color and adapts its color accordingly according to the chameleon effect. The inventive system is obtained by combining an electrochromic color system with a semi-transparent array of photodetectors, for example combinations of individual pixels that are sensitive for the different colors (red, green blue), said array being superimposed on the electrochromic color system.